J. Semicond. > 2021, Volume 42 > Issue 12 > 122001, doi: 10.1088/1674-4926/42/12/122001
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Quantum transport simulation of the two-dimensional GaSb transistors

Panpan Wang, Songxuan Han and Ruge Quhe

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 Corresponding author: Ruge Quhe, quheruge@bupt.edu.cn

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Abstract: Owing to the high carrier mobility, two-dimensional (2D) gallium antimonite (GaSb) is a promising channel material for field-effect transistors (FETs) in the post-silicon era. We investigated the ballistic performance of the 2D GaSb metal–oxide–semiconductor FETs with a 10 nm-gate-length by the ab initio quantum transport simulation. Because of the wider bandgap and better gate-control ability, the performance of the 10-nm monolayer (ML) GaSb FETs is generally superior to the bilayer counterparts, including the three-to-four orders of magnitude larger on-current. Via hydrogenation, the delay-time and power consumption can be further enhanced with magnitude up to 35% and 57%, respectively, thanks to the expanded bandgap. The 10-nm ML GaSb FETs can almost meet the International Technology Roadmap for Semiconductors (ITRS) for high-performance demands in terms of the on-state current, intrinsic delay time, and power-delay product.

Key words: 2D GaSb, 10 nm MOSFET, hydrogenation, density functional theory, quantum transport simulation



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Bahuguna B P, Saini L K, Sharma R O, et al. Strain and electric field induced metallization in the GaX (X = N, P, As & Sb) monolayer. Physica E, 2018, 99, 236 doi: 10.1016/j.physe.2018.01.018
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Singh A K, Zhuang H L, Hennig R G. Ab initiosynthesis of single-layer III-V materials. Phys Rev B, 2014, 89, 245431 doi: 10.1103/PhysRevB.89.245431
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Schwierz F. Graphene transistors. Nat Nanotechnol, 2010, 5, 487 doi: 10.1038/nnano.2010.89
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Riffe D M. Temperature dependence of silicon carrier effective masses with application to femtosecond reflectivity measurements. J Opt Soc Am B, 2002, 19, 1092 doi: 10.1364/JOSAB.19.001092
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Yadav D, Nair D R. Impact of source to drain tunneling on the ballistic performance of Si, Ge, GaSb, and GeSn nanowire p-MOSFETs. IEEE J Electron Devices Soc, 2020, 8, 308 doi: 10.1109/JEDS.2020.2980633
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Quhe R G, Peng X Y, Pan Y Y, et al. Can a black phosphorus Schottky barrier transistor be good enough. ACS Appl Mater Interfaces, 2017, 9, 3959 doi: 10.1021/acsami.6b14699
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Sun X T, Xu L, Zhang Y, et al. Performance limit of monolayer WSe2 transistors; significantly outperform their MoS2 counterpart. ACS Appl Mater Interfaces, 2020, 12, 20633 doi: 10.1021/acsami.0c01750
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Yu B, Chang L, Ahmed S, et al. FinFET scaling to 10 nm gate length. IEEE International Electron Devices Meeting, 2002, 251
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Ni Z Y, Ye M, Ma J H, et al. Performance upper limit of sub-10 nm monolayer MoS2 transistors. Adv Electron Mater, 2016, 2, 1600191 doi: 10.1002/aelm.201600191
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Bennett B R, Ancona M G, Boos J B, et al. Strained GaSb/AlAsSb quantum wells for p-channel field-effect transistors. J Cryst Growth, 2008, 311, 47 doi: 10.1016/j.jcrysgro.2008.10.025
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Bennett B R, Chick T F, Ancona M G, et al. Enhanced hole mobility and density in GaSb quantum wells. Solid State Electron, 2013, 79, 274 doi: 10.1016/j.sse.2012.08.004
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Chen Y W, Tan Z, Zhao L F, et al. Mobility enhancement of strained GaSb p-channel metal–oxide–semiconductor field-effect transistors with biaxial compressive strain. Chin Phys B, 2016, 25, 038504 doi: 10.1088/1674-1056/25/3/038504
[37]
del Alamo J A. Nanometre-scale electronics with III-V compound semiconductors. Nature, 2011, 479, 317 doi: 10.1038/nature10677
[38]
Bansal A, Paul B C, Roy K. Modeling and optimization of fringe capacitance of nanoscale DGMOS devices. IEEE Trans Electron Devices, 2005, 52, 256 doi: 10.1109/TED.2004.842713
[39]
Lacord J, Ghibaudo G, Boeuf F. Comprehensive and accurate parasitic capacitance models for two- and three-dimensional CMOS device structures. IEEE Trans Electron Devices, 2012, 59, 1332 doi: 10.1109/TED.2012.2187454
[40]
Wei L, Boeuf F, Skotnicki T, et al. Parasitic capacitances: Analytical models and impact on circuit-level performance. IEEE Trans Electron Devices, 2011, 58, 1361 doi: 10.1109/TED.2011.2121912
[41]
Vicarelli L, Vitiello M S, Coquillat D, et al. Graphene field-effect transistors as room-temperature terahertz detectors. Nat Mater, 2012, 11, 865 doi: 10.1038/nmat3417
[42]
Singh S, Thakar K, Kaushik N, et al. Performance projections for two-dimensional materials in radio-frequency applications. Phys Rev Appl, 2018, 10, 014022 doi: 10.1103/PhysRevApplied.10.014022
[43]
Prasanna Kumar S, Sandeep P, Choudhary S. Changes in transconductance (gm) and Ion/Ioff with high-K dielectrics in MX2 monolayer 10 nm channel double gate n-MOSFET. Superlattices Microstruct, 2017, 111, 642 doi: 10.1016/j.spmi.2017.07.021
Fig. 1.  (Color online) Top and side views and band structures of (a) ML GaSb, (b) ML h-GaSb, (c) BL GaSb, and (d) BL h-GaSb.

DownLoad: Full-Size Img PowerPoint
Fig. 2.  (Color online) (a) Schematic model of DG ML GaSb MOSFET with 10 nm gate length. (b, c) Transfer characteristic of ML GaSb and h-GaSb and BL GaSb and h-GaSb.

DownLoad: Full-Size Img PowerPoint
Fig. 3.  (Color online) (a) On-current versus the effective mass m*, (b) subthreshold swing versus transconductance, and (c) power-delay products versus delay time. Labels with and without cross-shaped subscripts represent the values calculated according to IRDS and ITRS standards, respectively. The data of other transistors with a similar gate length are also included for comparison: GaSb p-nanowire[29], BP (transfer along zigzag direction)[30], WSe2[31], MoS2 MOSFETs[9], and Si FinFET[32].

DownLoad: Full-Size Img PowerPoint
Fig. 4.  (Color online) Position resolved local density of state and spectral current in the channel region of (a–c) ML GaSb, (d–f) ML h-GaSb and (g–i) BL h-GaSb at different states. μs and μd are the electrochemical potential of the source and drain, respectively. ΦB is the effective barrier height.

DownLoad: Full-Size Img PowerPoint

Table 1.   Structural and electronic parameters of monolayer (ML) and bilayer (BL) GaSb. h-GaSb stands for the hydrogenated layer.

ParameterML GaSbML h-GaSbBL GaSbBL h-GaSb
a (Å)4.364.374.384.37
d (Å)0.812.194.467.69
d′ (Å)0.810.870.810.90
Δ (eV)1.001.380.230.50
me* (m0)0.0700.0810.5880.086
mh* (m0)0.4850.6200.6850.555
a: lattice parameter; d: thickness; d′: the distance between Ga and Sb atom along the direction out of the plane; Δ: bandgap; me*: the electron effective mass; mh*: the heavy-hole effective mass. m0: the free effective mass.
DownLoad: CSV
[1]
Frank D J. Power-constrained CMOS scaling limits. IBM J Res Dev, 2002, 46, 235 doi: 10.1147/rd.462.0235
[2]
Yan R H, Ourmazd A, Lee K F. Scaling the Si MOSFET: From bulk to SOI to bulk. IEEE Trans Electron Devices, 1992, 39, 1704 doi: 10.1109/16.141237
[3]
Hu C. FinFET and UTB: How to make very short channel MOSFETs. ECS Trans, 2013, 50, 17 doi: 10.1149/05009.0017ecst
[4]
Uchida K, Koga J, Takagi S I. Experimental study on carrier transport mechanisms in double-and single-gate ultrathin-body mosfets. IEEE International Electron Devices Meeting, 2003, 33.5.1
[5]
Uchida K, Watanabe H, Kinoshita A, et al. Experimental study on carrier transport mechanism in ultrathin-body SOI nand p-MOSFETs with SOI thickness less than 5 nm. Dig Int Electron Devices Meet, 2002, 47
[6]
Uchida K, Watanabe H, Koga J, et al. Experimental study on carrier transport mechanism in ultrathin-body SOI MOSFETs. International Conference on Simulation of Semiconductor Processes and Devices, 2003, 8
[7]
Bandurin D A, Tyurnina A V, Yu G L, et al. High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe. Nat Nanotechnol, 2017, 12, 223 doi: 10.1038/nnano.2016.242
[8]
Li L K, Yu Y J, Ye G, et al. Black phosphorus field-effect transistors. Nat Nanotechnol, 2014, 9, 372 doi: 10.1038/nnano.2014.35
[9]
Radisavljevic B, Radenovic A, Brivio J, et al. Single-layer MoS2 transistors. Nat Nanotechnol, 2011, 6, 147 doi: 10.1038/nnano.2010.279
[10]
Schwierz F, Pezoldt J, Granzner R. Two-dimensional materials and their prospects in transistor electronics. Nanoscale, 2015, 7, 8261 doi: 10.1039/C5NR01052G
[11]
Tao L, Cinquanta E, Chiappe D, et al. Silicene field-effect transistors operating at room temperature. Nat Nanotechnol, 2015, 10, 227 doi: 10.1038/nnano.2014.325
[12]
Acun A, Poelsema B, Zandvliet H J W, et al. The instability of silicene on Ag(111). Appl Phys Lett, 2013, 103, 263119 doi: 10.1063/1.4860964
[13]
Doornbos G, Passlack M. Benchmarking of III–V n-MOSFET maturity and feasibility for future CMOS. IEEE Electron Device Lett, 2010, 31, 1110 doi: 10.1109/LED.2010.2063012
[14]
del Alamo J A, Antoniadis D A, Lin J Q, et al. Nanometer-scale III-V MOSFETs. IEEE J Electron Devices Soc, 2016, 4, 205 doi: 10.1109/JEDS.2016.2571666
[15]
Lü X, He S S, Lian H X, et al. Structural, electronic, and optical properties of pristine and bilayers of hexagonal III-V binary compounds and their hydrogenated counterparts. Appl Surf Sci, 2020, 531, 147262 doi: 10.1016/j.apsusc.2020.147262
[16]
Riel H, Wernersson L E, Hong M, et al. III-V compound semiconductor transistors — from planar to nanowire structures. MRS Bull, 2014, 39, 668 doi: 10.1557/mrs.2014.137
[17]
Bahuguna B P, Saini L K, Sharma R O, et al. Strain and electric field induced metallization in the GaX (X = N, P, As & Sb) monolayer. Physica E, 2018, 99, 236 doi: 10.1016/j.physe.2018.01.018
[18]
Low T, Rodin A S, Carvalho A, et al. Tunable optical properties of multilayer black phosphorus thin films. Phys Rev B, 2014, 90, 075434 doi: 10.1103/PhysRevB.90.075434
[19]
Brandbyge M, Mozos J L, Ordejón P, et al. Density-functional method for nonequilibrium electron transport. Phys Rev B, 2002, 65, 165401 doi: 10.1103/PhysRevB.65.165401
[20]
Soler J M, Artacho E, Gale J D, et al. The SIESTA method for ab initio order-N materials simulation. J Phys: Condens Matter, 2002, 14, 2745 doi: 10.1088/0953-8984/14/11/302
[21]
Monkhorst H J, Pack J D. Special points for Brillouin-zone integrations. Phys Rev B, 1976, 13, 5188 doi: 10.1103/PhysRevB.13.5188
[22]
Perdew J P, Burke K, Ernzerhof M. Generalized gradient approximation made simple. Phys Rev Lett, 1996, 77, 3865 doi: 10.1103/PhysRevLett.77.3865
[23]
Zhuang H L, Singh A K, Hennig R G. Computational discovery of single-layer III-V materials. Phys Rev B, 2013, 87, 165415 doi: 10.1103/PhysRevB.87.165415
[24]
Fan X F, Zheng W T, Kuo J L, et al. Structural stability of single-layer MoS2 under large strain. J Phys: Condens Matter, 2015, 27, 105401 doi: 10.1088/0953-8984/27/10/105401
[25]
Lin S S. Light-emitting two-dimensional ultrathin silicon carbide. J Phys Chem C, 2012, 116, 3951 doi: 10.1021/jp210536m
[26]
Singh A K, Zhuang H L, Hennig R G. Ab initiosynthesis of single-layer III-V materials. Phys Rev B, 2014, 89, 245431 doi: 10.1103/PhysRevB.89.245431
[27]
Schwierz F. Graphene transistors. Nat Nanotechnol, 2010, 5, 487 doi: 10.1038/nnano.2010.89
[28]
Riffe D M. Temperature dependence of silicon carrier effective masses with application to femtosecond reflectivity measurements. J Opt Soc Am B, 2002, 19, 1092 doi: 10.1364/JOSAB.19.001092
[29]
Yadav D, Nair D R. Impact of source to drain tunneling on the ballistic performance of Si, Ge, GaSb, and GeSn nanowire p-MOSFETs. IEEE J Electron Devices Soc, 2020, 8, 308 doi: 10.1109/JEDS.2020.2980633
[30]
Quhe R G, Peng X Y, Pan Y Y, et al. Can a black phosphorus Schottky barrier transistor be good enough. ACS Appl Mater Interfaces, 2017, 9, 3959 doi: 10.1021/acsami.6b14699
[31]
Sun X T, Xu L, Zhang Y, et al. Performance limit of monolayer WSe2 transistors; significantly outperform their MoS2 counterpart. ACS Appl Mater Interfaces, 2020, 12, 20633 doi: 10.1021/acsami.0c01750
[32]
Yu B, Chang L, Ahmed S, et al. FinFET scaling to 10 nm gate length. IEEE International Electron Devices Meeting, 2002, 251
[33]
Ni Z Y, Ye M, Ma J H, et al. Performance upper limit of sub-10 nm monolayer MoS2 transistors. Adv Electron Mater, 2016, 2, 1600191 doi: 10.1002/aelm.201600191
[34]
Bennett B R, Ancona M G, Boos J B, et al. Strained GaSb/AlAsSb quantum wells for p-channel field-effect transistors. J Cryst Growth, 2008, 311, 47 doi: 10.1016/j.jcrysgro.2008.10.025
[35]
Bennett B R, Chick T F, Ancona M G, et al. Enhanced hole mobility and density in GaSb quantum wells. Solid State Electron, 2013, 79, 274 doi: 10.1016/j.sse.2012.08.004
[36]
Chen Y W, Tan Z, Zhao L F, et al. Mobility enhancement of strained GaSb p-channel metal–oxide–semiconductor field-effect transistors with biaxial compressive strain. Chin Phys B, 2016, 25, 038504 doi: 10.1088/1674-1056/25/3/038504
[37]
del Alamo J A. Nanometre-scale electronics with III-V compound semiconductors. Nature, 2011, 479, 317 doi: 10.1038/nature10677
[38]
Bansal A, Paul B C, Roy K. Modeling and optimization of fringe capacitance of nanoscale DGMOS devices. IEEE Trans Electron Devices, 2005, 52, 256 doi: 10.1109/TED.2004.842713
[39]
Lacord J, Ghibaudo G, Boeuf F. Comprehensive and accurate parasitic capacitance models for two- and three-dimensional CMOS device structures. IEEE Trans Electron Devices, 2012, 59, 1332 doi: 10.1109/TED.2012.2187454
[40]
Wei L, Boeuf F, Skotnicki T, et al. Parasitic capacitances: Analytical models and impact on circuit-level performance. IEEE Trans Electron Devices, 2011, 58, 1361 doi: 10.1109/TED.2011.2121912
[41]
Vicarelli L, Vitiello M S, Coquillat D, et al. Graphene field-effect transistors as room-temperature terahertz detectors. Nat Mater, 2012, 11, 865 doi: 10.1038/nmat3417
[42]
Singh S, Thakar K, Kaushik N, et al. Performance projections for two-dimensional materials in radio-frequency applications. Phys Rev Appl, 2018, 10, 014022 doi: 10.1103/PhysRevApplied.10.014022
[43]
Prasanna Kumar S, Sandeep P, Choudhary S. Changes in transconductance (gm) and Ion/Ioff with high-K dielectrics in MX2 monolayer 10 nm channel double gate n-MOSFET. Superlattices Microstruct, 2017, 111, 642 doi: 10.1016/j.spmi.2017.07.021

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    Received: 27 April 2021 Revised: 29 May 2021 Online: Accepted Manuscript: 05 July 2021Uncorrected proof: 06 July 2021Published: 03 December 2021

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      Article Navigation >  Journal of Semiconductors  > 2021  >  42(12): 122001
      Panpan Wang, Songxuan Han, Ruge Quhe. Quantum transport simulation of the two-dimensional GaSb transistors[J]. Journal of Semiconductors, 2021, 42(12): 122001. doi: 10.1088/1674-4926/42/12/122001 P P Wang, S X Han, R G Quhe, Quantum transport simulation of the two-dimensional GaSb transistors[J]. J. Semicond., 2021, 42(12): 122001. doi: 10.1088/1674-4926/42/12/122001.Export: BibTex EndNote
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      Panpan Wang, Songxuan Han, Ruge Quhe. Quantum transport simulation of the two-dimensional GaSb transistors[J]. Journal of Semiconductors, 2021, 42(12): 122001. doi: 10.1088/1674-4926/42/12/122001

      P P Wang, S X Han, R G Quhe, Quantum transport simulation of the two-dimensional GaSb transistors[J]. J. Semicond., 2021, 42(12): 122001. doi: 10.1088/1674-4926/42/12/122001.
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      Quantum transport simulation of the two-dimensional GaSb transistors

      doi: 10.1088/1674-4926/42/12/122001

      • State Key Laboratory of Information Photonics and Optical Communications and School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, China

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      • Author Bio:

        Panpan Wang was born in Inner Mongolia, China, 2000. Now she is an undergraduate of Beijing University of Posts and Telecommunications, majoring in applied physics. Her research focuses on the quantum transport simulations of sub-10 nm transistors

        Ruge Quhe got her PhD from Peking University. She is currently an Associate Professor with the School of Science, Beijing University of Posts and Telecommunications. Her research focuses on low-dimensional materials and electronics

      • Corresponding author: quheruge@bupt.edu.cn
      • Received Date: 2021-04-27
      • Revised Date: 2021-05-29
      • Published Date: 2021-12-10

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