Chin. J. Semicond. > Volume 4 > Issue 6 > Article Number: 540

离子注入在SiO_2中引入的陷阱中心

周光能 , 郑有炓 and 吴汝麟

+ Author Affiliations + Find other works by these authors

PDF

Abstract: 本文主要研究B~+、P~+、As~+离子注入的MOS结构经高温(>860℃)退火后的氧化层陷阱行为.用所建立的雪崩热电子注入及高频 C-V特性联合测量装置,研究了这类陷阱的荷电状态、有效密度、电子俘获截面及与注入离子的关系;利用陷阱电子解陷的热激电流技术,研究了As~+注入氧化层中陷阱的能级深度.

Search

Advanced Search >>

Article Metrics

Article views: 1775 Times PDF downloads: 665 Times Cited by: 0 Times

History

Manuscript received: 20 August 2015 Manuscript revised: Online: Published: 01 June 1983

Email This Article

User name:
Email:*请输入正确邮箱
Code:*验证码错误