Chin. J. Semicond. > 1983, Volume 4 > Issue 6 > 540-548
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离子注入在SiO_2中引入的陷阱中心

周光能 , 郑有炓 and 吴汝麟

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    Received: 20 August 2015 Revised: Online: Published: 01 June 1983

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      Article Navigation >  Journal of Semiconductors  > 1983  >  4(6): 540-548
      周光能, 郑有炓, 吴汝麟. 离子注入在SiO_2中引入的陷阱中心[J]. 半导体学报(英文版), 1983, 4(6): 540-548.
      Citation:
      周光能, 郑有炓, 吴汝麟. 离子注入在SiO_2中引入的陷阱中心[J]. 半导体学报(英文版), 1983, 4(6): 540-548.
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      • Received Date: 2015-08-20

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