Chin. J. Semicond. > 1983, Volume 4 > Issue 6 > 579-585
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高浓度注砷硅的红外瞬态辐照退火

侯东彦 , 钱佩信 and 李志坚

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    Received: 20 August 2015 Revised: Online: Published: 01 June 1983

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      Article Navigation >  Journal of Semiconductors  > 1983  >  4(6): 579-585
      侯东彦, 钱佩信, 李志坚. 高浓度注砷硅的红外瞬态辐照退火[J]. 半导体学报(英文版), 1983, 4(6): 579-585.
      Citation:
      侯东彦, 钱佩信, 李志坚. 高浓度注砷硅的红外瞬态辐照退火[J]. 半导体学报(英文版), 1983, 4(6): 579-585.
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      • Received Date: 2015-08-20

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