Chin. J. Semicond. > Volume 4 > Issue 6 > Article Number: 579

高浓度注砷硅的红外瞬态辐照退火

侯东彦 , 钱佩信 and 李志坚

+ Author Affiliations + Find other works by these authors

PDF

Abstract: 用高温石墨作为红外辐射源,对高浓度的注砷硅进行了瞬态(13 秒)辐照,达到非常好的退火效果.对于10~(16)cm~(-2)剂量的注砷硅可达到100%的电激活,且损伤恢复比热退火(1100℃,30分)情况要好,引起的注入原子的再分布比常规的高温热退火要小得多.用本方法退火的注砷硅PN结具有良好的电特性。因此,在 VLSI工艺中它是一种很有应用前景的离子注入退火技术.

Search

Advanced Search >>

Article Metrics

Article views: 1202 Times PDF downloads: 896 Times Cited by: 0 Times

History

Manuscript received: 20 August 2015 Manuscript revised: Online: Published: 01 June 1983

Email This Article

User name:
Email:*请输入正确邮箱
Code:*验证码错误