Chin. J. Semicond. > Volume 8 > Issue 1 > Article Number: 49

能带结构对InGaAsP半导体光增益谱的影响

郭长志 and 黄永箴

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Abstract: 本文从理论上系统地研究了能带结构对InGaAsP四元半导体光增益过程的作用,着重分析对能带结构敏感的能态密度及光跃迁矩阵元在不同掺杂、不同注入和不同温度下对光增益谱的影响及其物理根源.对现行的五种理论模型的计算结果及其与实验的比较表明,以k选择为主的跃迁与考虑导带-受主间跃迁的结果相差可达一倍以上,而以k选择为主的跃迁的计算结果与实验符合较好,如采用改进能带则可进一步减小高能端吸收系数与实验的差距.

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History

Manuscript received: 19 August 2015 Manuscript revised: Online: Published: 01 January 1987

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