Chin. J. Semicond. > Volume 10 > Issue 10 > Article Number: 725

两性杂质锗在LPE GaAs中分凝系数和占位比的计算

杨辉 and 梁骏吾

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Abstract: 将三元相图理论推广到Ⅲ-Ⅴ族化合物及两性Ⅳ族元素杂质组成的赝四元体系,推导了Ⅳ族元素Ge在GaAs液相外延时的分凝系数的温度关系以及占位比与温度的关系,理论计算与实验相符合.并用拟合的方法确定了Ga-Ge-As固相体系中的相互作用参数是温度的二次函数.

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History

Manuscript received: 19 August 2015 Manuscript revised: Online: Published: 01 October 1989

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