Chin. J. Semicond. > 1989, Volume 10 > Issue 10 > 725-732

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两性杂质锗在LPE GaAs中分凝系数和占位比的计算

杨辉 and 梁骏吾

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    Received: 19 August 2015 Revised: Online: Published: 01 October 1989

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      Article Navigation >  Journal of Semiconductors  > 1989  >  10(10): 725-732
      杨辉, 梁骏吾. 两性杂质锗在LPE GaAs中分凝系数和占位比的计算[J]. 半导体学报(英文版), 1989, 10(10): 725-732.
      Citation:
      杨辉, 梁骏吾. 两性杂质锗在LPE GaAs中分凝系数和占位比的计算[J]. 半导体学报(英文版), 1989, 10(10): 725-732.
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      • Received Date: 2015-08-19

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