Chin. J. Semicond. > Volume 10 > Issue 10 > Article Number: 788

GaAs/AlGaAs多量子阱激光器

张永航 , 孔梅影 , 陈良惠 and 王启明

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Abstract: 用国产的分子束外延设备生长出多量子阱激光器结构,在室温下,其宽接触阈电流密度为3000A/cm~2,质子轰击条形器件单管最佳阈值电流为128mA,单面连续输出功率可大于22mw,在一定注入范围内可单纵模工作,最高单面微分量子效率达34%,激射波长在8590~8640埃之间,远场光强分布呈单峰,在室温附近的特征温度T_o为202K.对外延材料和器件的初步研究表明,AlGaAs材料特别是掺杂的AlGaAs材料质量不理想是导致激光器阈电流密度不够低的可能原因.

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History

Manuscript received: 19 August 2015 Manuscript revised: Online: Published: 01 October 1989

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