Chin. J. Semicond. > Volume 17 > Issue 2 > Article Number: 126

BiCMOS例相器延迟特性的计算与分析

吴金,魏同立,于宗光

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Abstract: 本文对BiCMOS倒相器延迟特性进行了系统研究,在分析比较MOS与双极器件及其组成电路不同状态下的工作特点基础上,得到BiCMOS倒相电路在小注入、大注入和集电极寄生电阻等不同限制条件下的延迟时间的解析关系式,结果表明该模型具有近似于SPICE数值模拟精度,为各类高性能BiCMOS电路的优化设计与分析提供了理论依据.

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History

Manuscript received: 18 August 2015 Manuscript revised: Online: Published: 01 February 1996

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