Chin. J. Semicond. > Volume 15 > Issue 5 > Article Number: 339

砷化镓SJFET四端器件

任新国,欧海疆,王渭源,夏冠群

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Abstract: 本文提出一种由M-SSchottky结和pn结组成的GaAsSJPET四端器件,对该器件原理进行了分析与讨论,并在实验室研制出了GaAsSJFET四端器件.实验结果表明,该器件可通过上、下两个栅分别调控,实现器件阈值电压连续可调.该器件极易获得稳定、重复的E-和D-MESFET,可望在GaAs集成电路中得到应用.

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History

Manuscript received: 18 August 2015 Manuscript revised: Online: Published: 01 May 1994

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