Chin. J. Semicond. > Volume 8 > Issue 1 > Article Number: 99

一种GaAs快速光电导开关

李锦林 , 梁东明 and 张进昌

+ Author Affiliations + Find other works by these authors

PDF

Abstract: 本文报道了一种采用掺 Cr的 GaAs高阻材料,交叉指状图形,Ni/Ge/Au金属化,浅腐蚀坑改善光电耦合效率的快速、灵敏光电导开关.在染料激光脉冲激励下,获得短于200ps的瞬态响应.根据分析,这种光电导开关的瞬态响应应远小于200 ps,适用于信号处理.

Search

Advanced Search >>

Article Metrics

Article views: 1994 Times PDF downloads: 703 Times Cited by: 0 Times

History

Manuscript received: 19 August 2015 Manuscript revised: Online: Published: 01 January 1987

Email This Article

User name:
Email:*请输入正确邮箱
Code:*验证码错误