Citation: |
Weiran Zhao, Qiuqi Mo, Li Zheng, Zhongliang Li, Xiaowei Zhang, Yuehui Yu. High-precision X-ray characterization for basic materials in modern high-end integrated circuit[J]. Journal of Semiconductors, 2024, 45(7): 071101. doi: 10.1088/1674-4926/24030016
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W R Zhao, Q Q Mo, L Zheng, Z L Li, X W Zhang, and Y H Yu, High-precision X-ray characterization for basic materials in modern high-end integrated circuit[J]. J. Semicond., 2024, 45(7), 071101 doi: 10.1088/1674-4926/24030016
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High-precision X-ray characterization for basic materials in modern high-end integrated circuit
DOI: 10.1088/1674-4926/24030016
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Abstract
Semiconductor materials exemplify humanity's unwavering pursuit of enhanced performance, efficiency, and functionality in electronic devices. From its early iterations to the advanced variants of today, this field has undergone an extraordinary evolution. As the reliability requirements of integrated circuits continue to increase, the industry is placing greater emphasis on the crystal qualities. Consequently, conducting a range of characterization tests on the crystals has become necessary. This paper will examine the correlation between crystal quality, device performance, and production yield, emphasizing the significance of crystal characterization tests and the important role of high-precision synchrotron radiation X-ray topography characterization in semiconductor analysis. Finally, we will cover the specific applications of synchrotron radiation characterization in the development of semiconductor materials. -
References
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