EDITORIAL

Preface to Special Issue on Advanced Optoelectronic and Electronic Devices toward Future Displays

Hoi-Sing Kwok1, 2, and Zhiyong Fan1, 2,

+ Author Affiliations

 Corresponding author: Hoi-Sing Kwok, eekwok@ust.hk; Zhiyong Fan, eezfan@ust.hk

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[1]
Shi R X, Lei T T, Xia Z H, et al. Low-temperature metal–oxide thin-film transistor technologies for implementing flexible electronic circuits and systems. J Semicond, 2023, 44(9), 091601 doi: 10.1088/1674-4926/44/9/091601
[2]
Chen F L, Zhang M, Wan Y H, et al. Advances in mobility enhancement of ITZO thin-film transistors: a review. J Semicond, 2023, 44(9), 091602 doi: 10.1088/1674-4926/44/9/091602
[3]
Wang Y X, Li J Y, Liu F Y, et al. Fluorination-mitigated high-current degradation of amorphous InGaZnO thin-film transistors. J Semicond, 2023, 44(9), 092601 doi: 10.1088/1674-4926/44/9/092601
[4]
Tam B S T, Dong S C, Tang C W. Low-temperature conformal vacuum deposition of OLED devices using close-space sublimation. J Semicond, 2023, 44(9), 092602 doi: 10.1088/1674-4926/44/9/092602
[5]
Qu X W, Sun X W. Impedance spectroscopy for quantum dot light-emitting diodes. J Semicond, 2023, 44(9), 091603 doi: 10.1088/1674-4926/44/9/091603
[6]
Li D P, Ma J R, Liu W B, et al. Enhancing performance of inverted quantum-dot light-emitting diodes based on a solution-processed hole transport layer via ligand treatment. J Semicond, 2023, 44(9), 092603 doi: 10.1088/1674-4926/44/9/092603
[7]
Qammar M, Zou B, Halpert J E. Organic-inorganic halide perovskites for memristors. J Semicond, 2023, 44(9), 091604 doi: 10.1088/1674-4926/44/9/091604
[8]
Long Z H, Ding Y C, Qiu X, et al. A dual-mode image sensor using an all-inorganic perovskite nanowire array for standard and neuromorphic imaging. J Semicond, 2023, 44(9), 092604 doi: 10.1088/1674-4926/44/9/092604
[9]
Zhang W L, Schneider J, Prodanov M F, et al. Photo-induced flexible semiconductor CdSe/CdS quantum rods alignment. J Semicond, 2023, 44(9), 092605 doi: 10.1088/1674-4926/44/9/092605
[10]
Wong M H. A landscape of β-Ga2O3 Schottky power diodes. J Semicond, 2023, 44(9), 091605 doi: 10.1088/1674-4926/44/9/091605
[1]
Shi R X, Lei T T, Xia Z H, et al. Low-temperature metal–oxide thin-film transistor technologies for implementing flexible electronic circuits and systems. J Semicond, 2023, 44(9), 091601 doi: 10.1088/1674-4926/44/9/091601
[2]
Chen F L, Zhang M, Wan Y H, et al. Advances in mobility enhancement of ITZO thin-film transistors: a review. J Semicond, 2023, 44(9), 091602 doi: 10.1088/1674-4926/44/9/091602
[3]
Wang Y X, Li J Y, Liu F Y, et al. Fluorination-mitigated high-current degradation of amorphous InGaZnO thin-film transistors. J Semicond, 2023, 44(9), 092601 doi: 10.1088/1674-4926/44/9/092601
[4]
Tam B S T, Dong S C, Tang C W. Low-temperature conformal vacuum deposition of OLED devices using close-space sublimation. J Semicond, 2023, 44(9), 092602 doi: 10.1088/1674-4926/44/9/092602
[5]
Qu X W, Sun X W. Impedance spectroscopy for quantum dot light-emitting diodes. J Semicond, 2023, 44(9), 091603 doi: 10.1088/1674-4926/44/9/091603
[6]
Li D P, Ma J R, Liu W B, et al. Enhancing performance of inverted quantum-dot light-emitting diodes based on a solution-processed hole transport layer via ligand treatment. J Semicond, 2023, 44(9), 092603 doi: 10.1088/1674-4926/44/9/092603
[7]
Qammar M, Zou B, Halpert J E. Organic-inorganic halide perovskites for memristors. J Semicond, 2023, 44(9), 091604 doi: 10.1088/1674-4926/44/9/091604
[8]
Long Z H, Ding Y C, Qiu X, et al. A dual-mode image sensor using an all-inorganic perovskite nanowire array for standard and neuromorphic imaging. J Semicond, 2023, 44(9), 092604 doi: 10.1088/1674-4926/44/9/092604
[9]
Zhang W L, Schneider J, Prodanov M F, et al. Photo-induced flexible semiconductor CdSe/CdS quantum rods alignment. J Semicond, 2023, 44(9), 092605 doi: 10.1088/1674-4926/44/9/092605
[10]
Wong M H. A landscape of β-Ga2O3 Schottky power diodes. J Semicond, 2023, 44(9), 091605 doi: 10.1088/1674-4926/44/9/091605
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    Received: 20 September 2023 Revised: Online: Published: 10 September 2023

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      Hoi-Sing Kwok, Zhiyong Fan. Preface to Special Issue on Advanced Optoelectronic and Electronic Devices toward Future Displays[J]. Journal of Semiconductors, 2023, 44(9): 090101. doi: 10.1088/1674-4926/44/9/090101 H S Kwok, Z Y Fan. Preface to Special Issue on Advanced Optoelectronic and Electronic Devices toward Future Displays[J]. J. Semicond, 2023, 44(9): 090101. doi: 10.1088/1674-4926/44/9/090101Export: BibTex EndNote
      Citation:
      Hoi-Sing Kwok, Zhiyong Fan. Preface to Special Issue on Advanced Optoelectronic and Electronic Devices toward Future Displays[J]. Journal of Semiconductors, 2023, 44(9): 090101. doi: 10.1088/1674-4926/44/9/090101

      H S Kwok, Z Y Fan. Preface to Special Issue on Advanced Optoelectronic and Electronic Devices toward Future Displays[J]. J. Semicond, 2023, 44(9): 090101. doi: 10.1088/1674-4926/44/9/090101
      Export: BibTex EndNote

      Preface to Special Issue on Advanced Optoelectronic and Electronic Devices toward Future DisplaysCelebration of the 10th anniversary of the State Key Laboratory of Advanced Displays and Optoelectronics Technologies at HKUST

      doi: 10.1088/1674-4926/44/9/090101
      More Information
      • Hoi-Sing Kwok:obtained his PhD from Harvard University in 1978. He taught at the State University of New York at Buffalo from 1980 to 1992 and became Full Professor in 1985. In 1992 he returned to Hong Kong to become Chair Professor at Hong Kong University of Science and Technology. He is currently Executive Director of the State Key Laboratory of Advanced Displays and Optoelectronics Technologies. He won the SID Slottow-Owaki Prize in 2014 and the SID Rajchman Prize in 2019. He is an Elected Member of the National Academy of Inventors, Hong Kong Academy of Engineering Sciences and the Asia-Pacific Academy of Materials. He is also a Fellow of IEEE, Society for Information Displays (SID) and Optica (Optical Society)
      • Zhiyong Fan:is a Chair Professor at the Department of Electronic and Computer Engineering. He received B.S. and M.S. degrees from Fudan University, PhD degree from University of California, Irvine in 2006 then worked as a postdoctoral fellow at UC Berkeley and Lawrence Berkeley National Laboratory. He joined Hong Kong University of Science and Technology (HKUST) in 2010. Currently, he is the Co-director of the State Key Laboratory of Advanced Display and Optoelectronics Technologies at HKUST. He is a Fellow of the Royal Society of Chemistry, Fellow of Optica, Senior Member of IEEE, and Founding Member of the Young Academy of Sciences of Hong Kong. He is an Associate Editor of Journal of Semiconductors. His research interest is focused on functional nanomaterials and structures for electronic, optoelectronic and bionic electronic devices
      • Corresponding author: eekwok@ust.hkeezfan@ust.hk
      • Received Date: 2023-09-20

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