Deformation Simulation on the Beam of InP-BasedMOEMS Tunable Devices

Wu Xuming; Wang Xiaodong; 何国荣; He Guorong; Wang Qing; Cao Yulian

Chin. J. Semicond. > 2007, Volume 28 > Issue 2 > 280-283

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Deformation Simulation on the Beam of InP-BasedMOEMS Tunable Devices

Wu Xuming, Wang Xiaodong, 何国荣, He Guorong, Wang Qing and Cao Yulian

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Abstract: Deformation of the beam in InP-based MOEMS tunable devices is frequently observed in experiments.This is because As atoms enter the beam during the growth.A method is developed to simulate the deformation,with no need to measure the gradient stress.The deformations of a one-armed beam and a two-armed beam are simulated,and the calculated values agree with the measured ones.The influences of As concentration and beam depth on the deformation are investigated,and the results show that it is useful to reduce the deformation by reducing the As concentration and increasing the beam depth.

Key words: MOEMS, tunable, deformation, gradient stress

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Wu Xuming, Wang Xiaodong, 何国荣, He Guorong, Wang Qing, Cao Yulian. Deformation Simulation on the Beam of InP-BasedMOEMS Tunable Devices[J]. Journal of Semiconductors, 2007, 28(2): 280-283.

Wu X M, Wang X D, He G R, Wang Q, Cao Y L. Deformation Simulation on the Beam of InP-BasedMOEMS Tunable Devices[J]. Chin. J. Semicond., 2007, 28(2): 280.

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Received: 18 August 2015 Revised: 11 August 2006 Online: Published: 01 February 2007

Deformation of the beam in InP-based MOEMS tunable devices is frequently observed in experiments.This is because As atoms enter the beam during the growth.A method is developed to simulate the deformation,with no need to measure the gradient stress.The deformations of a one-armed beam and a two-armed beam are simulated,and the calculated values agree with the measured ones.The influences of As concentration and beam depth on the deformation are investigated,and the results show that it is useful to reduce the deformation by reducing the As concentration and increasing the beam depth.

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