Call for Papers
Gallium oxide (Ga2O3) is graining tremendous traction for power electronics applications due to its high breakdown field. Ga2O3 possesses an ultra-wide bandgap of 4.8 eV, well above SiC and GaN (3.3~3.4 eV). Extensive research efforts have been devoted to developing effective epitaxial growth method for high quality Ga2O3 films and exploring high performance Ga2O3 electronic devices. Exciting research achievements have been achieved in Ga2O3 large size substrate, epitaxial growth techniques, and devices. These progresses make Ga2O3 promising for realizing more efficient, high power, high frequency power electronics.
This special issue focuses on recent progress in the topics related to Ga2O3 epitaxial growth and electronic devices. Both experimental and theoretical works will be accepted. We invite submission of original research articles/communications and comprehensive review papers to this special issue. The topics to be covered in this special issue include, but are not limited to:
l High voltage Ga2O3 electronic devices;
l Ga2O3 radio frequency devices;
l Ga2O3 heterojunction devices;
l High quality epitaxial growth of Ga2O3 films;
l Heterogeneous integration of Ga2O3 on foreign substrates;
l Theoretical modelling and simulation of Ga2O3 device;
l Large-size Ga2O3 single crystals and wafers.
GUEST EDITORS:
Prof. Genquan Han,, School of Microelectronics, Xidian University, Xian’an, Shaanxi 710071, China.
Email: gqhan@xidian.edu.cn
Prof. Shibing Long, School of Microelectronics, University of Science and Technology of China, Hefei, Anhui 230026, China.
Email: shibinglong@ustc.edu.cn
Assist. Prof. Yuhao Zhang, Center for Power Electronics Systems (CPES), Virginia Polytechnic Institute and State University, Blacksburg, VA 24060 USA.
Email: yhzhang@vt.edu
Dr. Yibo Wang, Platform for Characterization & Test, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215123, China.
Email: ybwang2022@sinano.ac.cn
Manuscript Submission:
Manuscripts should be prepared according to Journal’s guidelines, available at http://www.jos.ac.cn/news/Preparing_Your_Manuscript.htm.
Submit your manuscripts directly to the listing guest editors via the e-mail addresses above. Or directly submit via the online submission address at https://mc03.manuscriptcentral.com/jos-iop.
Please notify well in advance for your intention to submit a research paper.
Key Timetable Dates:
Manuscript Submission Deadline: December 31, 2022
Authors’ notification: February 28, 2023
Publication Date: May 31, 2023
