J. Semicond. > 2025, Volume 46 > Issue 1 > 011605
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REVIEWS

Recent progress on elemental tellurium and its devices

Jiachi Liao1, Zhengxun Lai2, You Meng1, 2, and Johnny C. Ho1, 3, 4,

+ Author Affiliations

 Corresponding author: You Meng, youmeng2@cityu.edu.hk; Johnny C. Ho, johnnyho@cityu.edu.hk

DOI: 10.1088/1674-4926/24090020CSTR: 32376.14.1674-4926.24090020

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Abstract: The rapid advancement of information technology has heightened interest in complementary devices and circuits. Conventional p-type semiconductors often lack sufficient electrical performance, thus prompting the search for new materials with high hole mobility and long-term stability. Elemental tellurium (Te), featuring a one-dimensional chiral atomic structure, has emerged as a promising candidate due to its narrow bandgap, high hole mobility, and versatility in industrial applications, particularly in electronics and renewable energy. This review highlights recent progress in Te nanostructures and related devices, focusing on synthesis methods, including vapor deposition and hydrothermal synthesis, which produce Te nanowires, nanorods, and other nanostructures. Critical applications in photodetectors, gas sensors, and energy harvesting devices are discussed, with a special emphasis on their role within the internet of things (IoT) framework, a rapidly growing field that is reshaping our technological landscape. The prospects and potential applications of Te-based technologies are also highlighted.

Key words: elemental tellurium, photodetector, field-effect transistor, gas sensor, energy harvesting device



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Fig. 1.  (Color online) The atomic and electronic structure of elemental Te. (a) The schematic picture of the Te structure consists of helical Te chains arranged in hexagonal arrays along the c direction. (b) Te atoms bound together by faint van der Waals force. Adapted with permission from Ref. [16]. Copyright 2023, Nature Publishing Group. (c) For the enantiomeric structures, the helical chains are arranged in different ways related to other properties. Adapted with permission from Ref. [12]. Copyright 2017, Nature Publishing Group. (d) The three-dimensional image of the spiral structure of elemental Te. Adapted with permission from Ref. [13]. Copyright 2024, Nature Publishing Group. (e)−(g) The atomic and electronic structures of α-, β-, and γ-phases of elemental Te. Adapted with permission from Ref. [14]. Copyright 2017, American Physical Society.

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Fig. 2.  (Color online) The electrical and optical properties of elemental Te. (a) Band structures of Te based on the spin−orbit (SOC) coupling and the corresponding partial density of states. (b) First Brillouin zone (BZ) of elemental Te. (c) Amplify the band characteristics near the edge of the direct band at the H point. (d) Magnify the image of the area near the VBM. Adapted the permission from Ref. [19]. Copyright 2021, Nature Publishing Group.

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Fig. 3.  (Color online) The thermoelectric properties of elemental Te and Te-based devices. (a), (b) The thermoelectric performance and Hall concentration based on different doped Te devices. Adapted with permission from Ref. [27]. Copyright 2024, Nature Publishing Group. (c) Temperature dependence of Te lattice thermal conductivity. Adapted with permission from Ref. [25]. Copyright 2018, Royal Society of Chemistry. (d)−(h) The performance and schematic images of a self-rolled tubular Te device. Adapted with permission of Ref. [29]. Copyright 2024, Nature Publishing Group.

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Fig. 4.  (Color online) PVD and CVD process of Te nanostructures. (a) Schematic illustration of the CVD synthesis process of Te nanostructure. (b) The AFM image of elemental Te nanoflake. Adapted with permission from Ref. [46]. Copyright 2019, IOP Publishing. (c) The morphological changes of Te nanomesh with different growth times. Adapted with permission from Ref. [16]. Copyright 2023, Nature Publishing Group.

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Fig. 5.  (Color online) The morphology of different elemental Te nanostructures. (a), (b) The TEM images of 2D Te nanoflakes. Adapted with permission of Ref. [52]. Copyright 2018, WILEY-VCH. (c) The TEM image of Te nanorods. The scale bar is 100 nm. Adapted with permission of Ref. [53]. Copyright 2014, Nature Publishing Group. (d) The SEM image of Te nanonet. Adapted permission with of Ref. [54]. Copyright 2021, Nature Publishing Group.

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Fig. 6.  (Color online) The photodetector based on elemental Te. (a) The schematic picture of the photodetecting device. (b), (c) The photocurrent response, including rise and fall time, based on quasi-2D Te under different light wavelengths. Adapted permission with Ref. [73]. Copyright 2020, Nature Publishing Group.

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Fig. 7.  (Color online) The schematic image and device performance of Te-based FET. (a) Schematic diagram of FETs device based on 2D Te. Adapted permission with Ref. [77], Copyright 2018, Royal Society of Chemistry. (b) The electrical performance of TeSeO FET with different compositions. (c) Comparing the device stability and hole mobility with other traditional materials. Adapted permission with Ref. [81]. Copyright 2024, Nature Publishing Group.

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Fig. 8.  (Color online) The testing results of gas sensors enabled by elemental Te. (a) The I−V curve of 42 nm Te devices. Inset top: The schematic diagram of Te-based device. Inset bottom: The AFM characterization image of Te nanoflake. (b) Current response of NO2. Adapted permission with Ref. [94]. Copyright 2019, The Royal Society of Chemistry. (c) NO2 selectivity of a Te gas sensor. Inset: The schematic diagrams of detection. (d) The environmental stability of Te-based devices. Adapted permission with Ref. [95]. Copyright 2020, The American Chemical Society.

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Fig. 9.  (Color online) The resistive switching device based on elemental Te. (a), (b) Nonlinear I−V relationship of Te device in NV-RS and V-RS modes. (c) The device schematic diagram and device resistance as a function of the active area. Adapted permission with Ref. [98]. Copyright 2021, Nature Publishing Group.

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Table 1.   The material property and environmental stability of different material devices.

Materials Mobility (cm2/(V∙s)) Stability
Te[2] (Direct bandgap, 0.35−1.265 eV) ~103 2 months
MoS2[37, 38] (Indirect bandgap, 0.75−1.89 eV) 480 3 months
Black phosphorus[39] (Direct bandgap, 0.3−1.5 eV) ~103 50 hours
WS2[40, 41] (Indirect bandgap, 0.75−1.91 eV) 970 2 weeks
Bi2Se3[31] (Direct bandgap, 0.2−0.3 eV) 1000−4000 6 months
WSe2[42, 43] (Indirect bandgap, 0.90−1.54 eV) ~500 1 month
MoSe2[44, 45] (Indirect bandgap, 0.80−1.58 eV） ~50 21 days
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Table 2.   Te nanostructures fabricated by different methods and the main advantages.

MethodsMain nanostructuresMain advantages
Physical vapor deposition[46]Nanowires and nanoflakesWell controllability
Chemical vapor deposition[16]Nanowires and nanoflakesControlled reaction conditions
Van der Waals epitaxy[49]2D layered structuresHeterogeneous integration
Hydrothermal[58, 59, 54]Nanowires and nanonetHigh throughput
Thermal evaporation[60, 57, 61]Thin filmUniform deposition
Liquid phase exfoliation[62−67]2D layered structuresHigh efficiency
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Table 3.   Comparison of different nanomaterials used in FET.

Materials On/off current ratio Responsibility Mobility (cm2/(V∙s))
Te nanoflakes[52] 105 13 A/W 700
Te thin film[19] 104 − 35
MoTe2[82] 106 − 27
Black phosphorus[78, 83] 105 4.8 mA/W 1000
MoS2[84, 85] − 5.2 A/W 120
WS2[86, 87] − 21.2 μA/W 140
WSe2[88] − 0.92 A/W 142
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    Received: 10 September 2024 Revised: 08 October 2024 Online: Accepted Manuscript: 01 November 2024Uncorrected proof: 23 December 2024Published: 15 January 2025

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      Article Navigation >  Journal of Semiconductors  > 2025  >  46(1): 011605
      Jiachi Liao, Zhengxun Lai, You Meng, Johnny C. Ho. Recent progress on elemental tellurium and its devices[J]. Journal of Semiconductors, 2025, 46(1): 011605. doi: 10.1088/1674-4926/24090020 ****J C Liao, Z X Lai, Y Meng, and J C. Ho, Recent progress on elemental tellurium and its devices[J]. J. Semicond., 2025, 46(1), 011605 doi: 10.1088/1674-4926/24090020
      Citation:
      Jiachi Liao, Zhengxun Lai, You Meng, Johnny C. Ho. Recent progress on elemental tellurium and its devices[J]. Journal of Semiconductors, 2025, 46(1): 011605. doi: 10.1088/1674-4926/24090020 ****
      J C Liao, Z X Lai, Y Meng, and J C. Ho, Recent progress on elemental tellurium and its devices[J]. J. Semicond., 2025, 46(1), 011605 doi: 10.1088/1674-4926/24090020
      shu

      Recent progress on elemental tellurium and its devices

      DOI: 10.1088/1674-4926/24090020
      CSTR: 32376.14.1674-4926.24090020
      • 1.

        Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong 999077, China

      • 2.

        Changsha Semiconductor Technology and Application Innovation Research Institute, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha 410082, China

      • 3.

        Institute for Materials Chemistry and Engineering, Kyushu University, Fukuoka 8168580, Japan

      • 4.

        State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Kowloon, Hong Kong 999077, China

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      • Jiachi Liao got his bachelor's degree in 2023 from the Northwestern Polytechnical University and his master's degree in 2024 from the City University of Hong Kong. Currently, he is a Research Assistant at the City University of Hong Kong under the supervision of Prof. Johnny C. Ho. His research focuses on elemental tellurium nanomesh growth and characterization of related devices
      • Zhengxun Lai is an Associate Professor in the College of Semiconductors at Hunan University. He received his B.S. degree in Applied Physics and M.S. degree in Materials Physics and Chemistry from Tianjin University in 2016 and 2019, respectively, and a Ph.D. degree in Materials Science and Engineering from the City University of Hong Kong in 2023. His research interests are focused on the halide perovskites electronic and photoelectric devices
      • You Meng is a Postdoctoral Researcher in the Department of Materials Science and Engineering at the City University of Hong Kong. He received his B.S. degree in Applied Physics and M.S. degree in Physics from Qingdao University in 2015 and 2018, respectively, and a Ph.D. degree in Materials Science and Engineering from the City University of Hong Kong in 2021. His research interests mainly focus on nanomaterials-based electronics and optoelectronics
      • Johnny C. Ho is a Professor of Materials Science and Engineering at the City University of Hong Kong. He received his B.S. degree in Chemical Engineering and his M.S. and Ph.D. degrees in Materials Science and Engineering from the University of California, Berkeley, in 2002, 2005, and 2009, respectively. From 2009-2010, he was a Postdoctoral Research Fellow in the Nanoscale Synthesis and Characterization Group at Lawrence Livermore National Laboratory. His research interests focus on the synthesis, characterization, integration, and device applications of nanoscale materials for various technological applications, including nanoelectronics, sensors, and energy harvesting
      • Corresponding author: youmeng2@cityu.edu.hk; johnnyho@cityu.edu.hk
      • Received Date: 2024-09-10
      • Revised Date: 2024-10-08
        • Available Online: 2024-11-01

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