Qingqing Wang, Yun Zheng, Chonghao Zhai, Xudong Li, Qihuang Gong, Jianwei Wang. Chip-based quantum communications[J]. Journal of Semiconductors, 2021, 42(9): 091901. doi: 10.1088/1674-4926/42/9/091901.
Q Q Wang, Y Zheng, C H Zhai, X D Li, Q H Gong, J W Wang, Chip-based quantum communications[J]. J. Semicond., 2021, 42(9): 091901. doi: 10.1088/1674-4926/42/9/091901.
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AlGaN-based ultraviolet (UV) laser diodes (LDs), with emission wavelength in the 280–365 nm range, are promising for applications in medical diagnostics and biological sensing, making them a prominent research focus in both academia and industry in recent years. A key challenge in their development is the large stress induced during the epitaxial growth of LD structures, which arises from the lack of lattice-matched substrates, and severely degrades the quantum efficiency and overall LD performance. This study presents an in-depth investigation into the growth mode and stress evolution of thick Al0.2Ga0.8N template. Firstly, we used the compressive stress between the Al0.2Ga0.8N layer and AlN/Sapphire substrate to form spontaneously three-dimensional growth to annihilate dislocations. Secondly, based on the Nakajima's theory of elasticity, we refined the conventional theoretical models for AlGaN strain relaxation of the S-K growth mode and critical thickness by considering the crucial role of threading dislocations (TDs) in releasing compressive stress. The experimentally measured critical thickness for three-dimensional growth was consistent with the calculated results. Furthermore, a crack-free high-quality 5 μm-thick Al0.2Ga0.8N template was successfully grown on an AlN/sapphire substrate.