Review Articles MORE

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  Recent progress on stability and applications of flexible perovskite photodetectors

  Abstract Full Text PDF Flexible photodetectors have garnered significant attention by virtue of their potential applications in environmental monitoring, wearable healthcare, imaging sensing, and portable optical communications. Perovskites stand out as particularly promising materials for photodetectors, offering exceptional optoelectronic properties, tunable band gaps, low-temperature solution processing, and notable mechanical flexibility. In this review, we explore the latest progress in flexible perovskite photodetectors, emphasizing the strategies developed for photoactive materials and device structures to enhance optoelectronic performance and stability. Additionally, we discuss typical applications of these devices and offer insights into future directions and potential applications.

  Flexible photodetectors have garnered significant attention by virtue of their potential applications in environmental monitoring, wearable healthcare, imaging sensing, and portable optical communications. Perovskites stand out as particularly promising materials for photodetectors, offering exceptional optoelectronic properties, tunable band gaps, low-temperature solution processing, and notable mechanical flexibility. In this review, we explore the latest progress in flexible perovskite photodetectors, emphasizing the strategies developed for photoactive materials and device structures to enhance optoelectronic performance and stability. Additionally, we discuss typical applications of these devices and offer insights into future directions and potential applications.
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  Recent developments in superjunction power devices

  Abstract Full Text PDF Superjunction (SJ) is one of the most innovative concepts in the field of power semiconductor devices and is often referred to as a "milestone" in power MOS. Its balanced charge field modulation mechanism breaks through the strong dependency between the doping concentration in the drift region and the breakdown voltage V_B in conventional devices. This results in a reduction of the trade-off relationship between specific on-resistance R_on,sp and V_B from the conventional R_on,sp∝V_B^2.5 to R_on,sp∝W∙V_B^1.32, and even to R_on,sp∝W·V_B^1.03. As the exponential term coefficient decreases, R_on,sp decreases with the cell width W, exhibiting a development pattern reminiscent of "Moore’s Law". This paper provides an overview of the latest research developments in SJ power semiconductor devices. Firstly, it introduces the minimum specific on-resistance R_on,min theory of SJ devices, along with its combination with special effects like 3-D depletion and tunneling, discussing the development of R_on,min theory in the wide bandgap SJ field. Subsequently, it discusses the latest advancements in silicon-based and wide bandgap SJ power devices. Finally, it introduces the homogenization field (HOF) and high-K voltage-sustaining layers derived from the concept of SJ charge balance. SJ has made significant progress in device performance, reliability, and integration, and in the future, it will continue to evolve through deeper integration with different materials, processes, and packaging technologies, enhancing the overall performance of semiconductor power devices.

  Superjunction (SJ) is one of the most innovative concepts in the field of power semiconductor devices and is often referred to as a "milestone" in power MOS. Its balanced charge field modulation mechanism breaks through the strong dependency between the doping concentration in the drift region and the breakdown voltage V_B in conventional devices. This results in a reduction of the trade-off relationship between specific on-resistance R_on,sp and V_B from the conventional R_on,sp∝V_B^2.5 to R_on,sp∝W∙V_B^1.32, and even to R_on,sp∝W·V_B^1.03. As the exponential term coefficient decreases, R_on,sp decreases with the cell width W, exhibiting a development pattern reminiscent of "Moore’s Law". This paper provides an overview of the latest research developments in SJ power semiconductor devices. Firstly, it introduces the minimum specific on-resistance R_on,min theory of SJ devices, along with its combination with special effects like 3-D depletion and tunneling, discussing the development of R_on,min theory in the wide bandgap SJ field. Subsequently, it discusses the latest advancements in silicon-based and wide bandgap SJ power devices. Finally, it introduces the homogenization field (HOF) and high-K voltage-sustaining layers derived from the concept of SJ charge balance. SJ has made significant progress in device performance, reliability, and integration, and in the future, it will continue to evolve through deeper integration with different materials, processes, and packaging technologies, enhancing the overall performance of semiconductor power devices.
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  Chalcogenide perovskites—challenges, status, and future prospects

  Abstract Full Text PDF Perovskites dominate the photovoltaic research community over the last two decades due to its very high absorption coefficient, electron and hole mobility. However, most of the reported solar cells constitute organic perovskites which offer very high efficiency but are highly unstable. Chalcogenide perovskites like BaZrS₃, CaZrS₃, etc. promise to be a perfect alternate owing to its high stability and mobilities. But, till now no stable photovoltaic device has been successfully fabricated using these materials and the existing challenges present in the synthesis of such perovskites are discussed. Also, the basic thermodynamic aspects that are essential for formation of BaZrS₃ are discussed. An extensive review on the precedent literatures and the future direction in the BaZrS₃ photovoltaic device research is clearly given.

  Perovskites dominate the photovoltaic research community over the last two decades due to its very high absorption coefficient, electron and hole mobility. However, most of the reported solar cells constitute organic perovskites which offer very high efficiency but are highly unstable. Chalcogenide perovskites like BaZrS₃, CaZrS₃, etc. promise to be a perfect alternate owing to its high stability and mobilities. But, till now no stable photovoltaic device has been successfully fabricated using these materials and the existing challenges present in the synthesis of such perovskites are discussed. Also, the basic thermodynamic aspects that are essential for formation of BaZrS₃ are discussed. An extensive review on the precedent literatures and the future direction in the BaZrS₃ photovoltaic device research is clearly given.
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  A review of ToF-based LiDAR

  Abstract Full Text PDF In recent years, propelled by the rapid iterative advancements in digital imaging technology and the semiconductor industry, encompassing microelectronic design, manufacturing, packaging, and testing, time-of-flight (ToF)-based imaging systems for acquiring depth information have garnered considerable attention from both academia and industry. This technology has emerged as a focal point of research within the realm of 3D imaging. Owing to its relatively straightforward principles and exceptional performance, ToF technology finds extensive applications across various domains including human−computer interaction, autonomous driving, industrial inspection, medical and healthcare, augmented reality, smart homes, and 3D reconstruction, among others. Notably, the increasing maturity of ToF-based LiDAR systems is evident in current developments. This paper comprehensively reviews the fundamental principles of ToF technology and LiDAR systems, alongside recent research advancements. It elucidates the innovative aspects and technical challenges encountered in both transmitter (TX) and receiver (RX), providing detailed discussions on corresponding solutions. Furthermore, the paper explores prospective avenues for future research, offering valuable insights for subsequent investigations.

  In recent years, propelled by the rapid iterative advancements in digital imaging technology and the semiconductor industry, encompassing microelectronic design, manufacturing, packaging, and testing, time-of-flight (ToF)-based imaging systems for acquiring depth information have garnered considerable attention from both academia and industry. This technology has emerged as a focal point of research within the realm of 3D imaging. Owing to its relatively straightforward principles and exceptional performance, ToF technology finds extensive applications across various domains including human−computer interaction, autonomous driving, industrial inspection, medical and healthcare, augmented reality, smart homes, and 3D reconstruction, among others. Notably, the increasing maturity of ToF-based LiDAR systems is evident in current developments. This paper comprehensively reviews the fundamental principles of ToF technology and LiDAR systems, alongside recent research advancements. It elucidates the innovative aspects and technical challenges encountered in both transmitter (TX) and receiver (RX), providing detailed discussions on corresponding solutions. Furthermore, the paper explores prospective avenues for future research, offering valuable insights for subsequent investigations.