Qingqing Wang, Yun Zheng, Chonghao Zhai, Xudong Li, Qihuang Gong, Jianwei Wang. Chip-based quantum communications[J]. Journal of Semiconductors, 2021, 42(9): 091901. doi: 10.1088/1674-4926/42/9/091901.
Q Q Wang, Y Zheng, C H Zhai, X D Li, Q H Gong, J W Wang, Chip-based quantum communications[J]. J. Semicond., 2021, 42(9): 091901. doi: 10.1088/1674-4926/42/9/091901.
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We have systematically studied the impact of thickness on the electrical properties of thin GaN channels on N-polar AlN (0001) templates grown on sapphire. The observed increase in sheet carrier density with increasing GaN thickness can be quantitatively reproduced by calculations assuming a Fermi-level pinning about 0.8 eV below the conduction band. The mobility strongly increases until 6 nm which correlates with reduced overlap of the 2DEG wave function with the surface layer. The mobility then increases more gradually up to 10 nm, corresponding to a reduced fraction of the 2DEG within the first 0.5 nm near the AlN/GaN interface, namely, the region affected by interface roughness. The mobility saturates at approximately 400 cm2·V−1·s−1, probably limited by dislocations and the overlap with deep traps inside the AlN back barrier. If the GaN thickness exceeds 15 nm, the mobility decreases, likely due to the onset of gradual relaxation and appearance of misfit dislocations. Finally, we note that the temperature-dependent mobility exhibits an unexpected contribution proportional to \begin{document}$ T^{-2} $\end{document} for all GaN channels on N-polar AlN, including those reported in the literature. Such observation may be explained by a 50% higher effective mass of the electron, which amplify the electron-phonon scattering, ultimately limiting the room-temperature mobility to about 750 cm2·V−1·s−1 and confining the sheet resistivity to values above 200 Ω/□.