Qingqing Wang, Yun Zheng, Chonghao Zhai, Xudong Li, Qihuang Gong, Jianwei Wang. Chip-based quantum communications[J]. Journal of Semiconductors, 2021, 42(9): 091901. doi: 10.1088/1674-4926/42/9/091901.
Q Q Wang, Y Zheng, C H Zhai, X D Li, Q H Gong, J W Wang, Chip-based quantum communications[J]. J. Semicond., 2021, 42(9): 091901. doi: 10.1088/1674-4926/42/9/091901.
Export: BibTex EndNote
The thermal sensitivity of phase-change memory (PCM) poses a stringent thermal budget for back-end encapsulation, demanding high-performance diffusion barriers processable at low temperatures. Conventional low-temperature silicon nitride (SiNx) films, however, are typically porous and prone to oxidation due to abundant metastable Si–H/N–H bonds. Herein, we propose an in-situ plasma cycling strategy that reconstructs the bonding network of plasma-enhanced chemical vapor deposition (PECVD) SiNx at a record-low temperature of 200 °C. Through controlled Ar/N2 plasma exposure, we cleave metastable bonds and reorganize into a continuous Si–N network, achieving a near-theoretical density of 3.4 g/cm3 (a 61.9% increase) and a 143.8% enhancement in Si–N bonding proportion. The resulting 40-nm barrier effectively suppresses Te/O interdiffusion, reduces wet-etch rate by ~67%, and maintains thermal confinement within 1.6% deviation. Integrated into PCM devices, this barrier yields a 98.7% SET/RESET operation yield and a 1.4-fold wider resistance window. This work not only provides a reliable encapsulation solution for PCM but also establishes a generalizable plasma-mediated interfacial engineering approach for advanced electronic devices under thermal constraints.