Review Articles MORE

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  Wide-bandgap and heavy-metal-free quantum dots for blue light-emitting diodes

  Abstract Full Text PDF Colloidal quantum dots (CQDs) are highly regarded for their outstanding photovoltaic characteristics, including excellent color purity, stability, high photoluminescence quantum yield (PLQY), narrow emission spectra, and ease of solution processing. Despite significant progress in quantum dot light-emitting diodes (QLEDs) technology since its inception in 1994, blue QLEDs still fall short in efficiency and lifespan compared to red and green versions. The toxicity concerns associated with Cd/Pb-based quantum dots (QDs) have spurred the development of heavy-metal-free alternatives, such as group Ⅱ−Ⅵ (e.g., ZnSe-based QDs), group Ⅲ−Ⅴ (e.g., InP, GaN QDs), and carbon dots (CDs). In this review, we discuss the key properties and development history of quantum dots (QDs), various synthesis approaches, the role of surface ligands, and important considerations in developing core/shell (C/S) structured QDs. Additionally, we provide an outlook on the challenges and future directions for blue QLEDs.

  Colloidal quantum dots (CQDs) are highly regarded for their outstanding photovoltaic characteristics, including excellent color purity, stability, high photoluminescence quantum yield (PLQY), narrow emission spectra, and ease of solution processing. Despite significant progress in quantum dot light-emitting diodes (QLEDs) technology since its inception in 1994, blue QLEDs still fall short in efficiency and lifespan compared to red and green versions. The toxicity concerns associated with Cd/Pb-based quantum dots (QDs) have spurred the development of heavy-metal-free alternatives, such as group Ⅱ−Ⅵ (e.g., ZnSe-based QDs), group Ⅲ−Ⅴ (e.g., InP, GaN QDs), and carbon dots (CDs). In this review, we discuss the key properties and development history of quantum dots (QDs), various synthesis approaches, the role of surface ligands, and important considerations in developing core/shell (C/S) structured QDs. Additionally, we provide an outlook on the challenges and future directions for blue QLEDs.
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  Adaptive optoelectronic transistor for intelligent vision system

  Abstract Full Text PDF Recently, for developing neuromorphic visual systems, adaptive optoelectronic devices become one of the main research directions and attract extensive focus to achieve optoelectronic transistors with high performances and flexible functionalities. In this review, based on a description of the biological adaptive functions that are favorable for dynamically perceiving, filtering, and processing information in the varying environment, we summarize the representative strategies for achieving these adaptabilities in optoelectronic transistors, including the adaptation for detecting information, adaptive synaptic weight change, and history-dependent plasticity. Moreover, the key points of the corresponding strategies are comprehensively discussed. And the applications of these adaptive optoelectronic transistors, including the adaptive color detection, signal filtering, extending the response range of light intensity, and improve learning efficiency, are also illustrated separately. Lastly, the challenges faced in developing adaptive optoelectronic transistor for artificial vision system are discussed. The description of biological adaptive functions and the corresponding inspired neuromorphic devices are expected to provide insights for the design and application of next-generation artificial visual systems.

  Recently, for developing neuromorphic visual systems, adaptive optoelectronic devices become one of the main research directions and attract extensive focus to achieve optoelectronic transistors with high performances and flexible functionalities. In this review, based on a description of the biological adaptive functions that are favorable for dynamically perceiving, filtering, and processing information in the varying environment, we summarize the representative strategies for achieving these adaptabilities in optoelectronic transistors, including the adaptation for detecting information, adaptive synaptic weight change, and history-dependent plasticity. Moreover, the key points of the corresponding strategies are comprehensively discussed. And the applications of these adaptive optoelectronic transistors, including the adaptive color detection, signal filtering, extending the response range of light intensity, and improve learning efficiency, are also illustrated separately. Lastly, the challenges faced in developing adaptive optoelectronic transistor for artificial vision system are discussed. The description of biological adaptive functions and the corresponding inspired neuromorphic devices are expected to provide insights for the design and application of next-generation artificial visual systems.
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  Electrolyte-gated optoelectronic transistors for neuromorphic applications

  Abstract Full Text PDF The traditional von Neumann architecture has demonstrated inefficiencies in parallel computing and adaptive learning, rendering it incapable of meeting the growing demand for efficient and high-speed computing. Neuromorphic computing with significant advantages such as high parallelism and ultra-low power consumption is regarded as a promising pathway to overcome the limitations of conventional computers and achieve the next-generation artificial intelligence. Among various neuromorphic devices, the artificial synapses based on electrolyte-gated transistors stand out due to their low energy consumption, multimodal sensing/recording capabilities, and multifunctional integration. Moreover, the emerging optoelectronic neuromorphic devices which combine the strengths of photonics and electronics have demonstrated substantial potential in the neuromorphic computing field. Therefore, this article reviews recent advancements in electrolyte-gated optoelectronic neuromorphic transistors. First, it provides an overview of artificial optoelectronic synapses and neurons, discussing aspects such as device structures, operating mechanisms, and neuromorphic functionalities. Next, the potential applications of optoelectronic synapses in different areas such as artificial visual system, pain system, and tactile perception systems are elaborated. Finally, the current challenges are summarized, and future directions for their developments are proposed.

  The traditional von Neumann architecture has demonstrated inefficiencies in parallel computing and adaptive learning, rendering it incapable of meeting the growing demand for efficient and high-speed computing. Neuromorphic computing with significant advantages such as high parallelism and ultra-low power consumption is regarded as a promising pathway to overcome the limitations of conventional computers and achieve the next-generation artificial intelligence. Among various neuromorphic devices, the artificial synapses based on electrolyte-gated transistors stand out due to their low energy consumption, multimodal sensing/recording capabilities, and multifunctional integration. Moreover, the emerging optoelectronic neuromorphic devices which combine the strengths of photonics and electronics have demonstrated substantial potential in the neuromorphic computing field. Therefore, this article reviews recent advancements in electrolyte-gated optoelectronic neuromorphic transistors. First, it provides an overview of artificial optoelectronic synapses and neurons, discussing aspects such as device structures, operating mechanisms, and neuromorphic functionalities. Next, the potential applications of optoelectronic synapses in different areas such as artificial visual system, pain system, and tactile perception systems are elaborated. Finally, the current challenges are summarized, and future directions for their developments are proposed.
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  Advances in Perovskite Lasers

  Abstract Full Text PDF Perovskite materials have emerged as promising candidates for various optoelectronic applications owing to their remarkable optoelectronic properties and easy solution processing. Metal halide perovskites, as direct-bandgap semiconductors, show an excellent class of optical gain media, which makes them applicable to the development of low-threshold or even thresholdless lasers. This mini review explores recent advances in perovskite-based laser technology, which have led to chiral single-mode microlasers, low-threshold, external-cavity-free lasing devices at room temperature, and other innovative device architectures. Including self-assembled CsPbBr₃ microwires that enable edge lasing. Realized continuous-wave (CW) pumped lasing by perovskite material pushes the research of electrically driven perovskite lasers. The capacity to regulate charge transport in halide perovskites further enhances their applicability in optoelectronic systems. The ongoing integration of perovskite materials with advanced photonic structures holds excellent potential for future innovations in laser technology and photovoltaics. We also highlight the transformative potential of perovskite materials in advancing the next generation of efficient and integrated optoelectronic devices.

  Perovskite materials have emerged as promising candidates for various optoelectronic applications owing to their remarkable optoelectronic properties and easy solution processing. Metal halide perovskites, as direct-bandgap semiconductors, show an excellent class of optical gain media, which makes them applicable to the development of low-threshold or even thresholdless lasers. This mini review explores recent advances in perovskite-based laser technology, which have led to chiral single-mode microlasers, low-threshold, external-cavity-free lasing devices at room temperature, and other innovative device architectures. Including self-assembled CsPbBr₃ microwires that enable edge lasing. Realized continuous-wave (CW) pumped lasing by perovskite material pushes the research of electrically driven perovskite lasers. The capacity to regulate charge transport in halide perovskites further enhances their applicability in optoelectronic systems. The ongoing integration of perovskite materials with advanced photonic structures holds excellent potential for future innovations in laser technology and photovoltaics. We also highlight the transformative potential of perovskite materials in advancing the next generation of efficient and integrated optoelectronic devices.