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Nucleation control for the growth of two-dimensional single crystals

Jinxia Bai1, 2, §, Chi Zhang1, 2, §, Fankai Zeng1, 2, Jinzong Kou1, 2, Jinhuan Wang1, 2, and Xiaozhi Xu1, 2,

+ Author Affiliations

 Corresponding author: Jinhuan Wang, jinhuanwang@scnu.edu.cn; Xiaozhi Xu, xiaozhixu@scnu.edu.cn

DOI: 10.1088/1674-4926/25030023CSTR: 32376.14.1674-4926.25030023

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Abstract: The unique structure and exceptional properties of two-dimensional (2D) materials offer significant potential for transformative advancements in semiconductor industry. Similar to the reliance on wafer-scale single-crystal ingots for silicon-based chips, practical applications of 2D materials at the chip level needs large-scale, high-quality production of 2D single crystals. Over the past two decades, the size of 2D single-crystals has been improved to wafer or meter scale, where the nucleation control during the growth process is particularly important. Therefore, it is essential to conduct a comprehensive review of nucleation control in 2D materials to gain fundamental insights into the growth of 2D single-crystal materials. This review mainly focuses on two aspects: controlling nucleation density to enable the growth from a single nucleus, and controlling nucleation position to achieve the unidirectionally aligned islands and subsequent seamless stitching. Finally, we provide an overview and forecast of the strategic pathways for emerging 2D materials.

Key words: 2D materials, single crystals, nucleation density, nucleation position



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Fig. 1.  (Color online) Schematic diagram of two strategies for the epitaxial growth of single-crystal 2D materials.

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Fig. 2.  (Color online) Single-nucleus growth through nucleation density control. (a) Schematic diagrams of local feedstock feeding. (b) Synthesis of a ~1.5-inch single crystal graphene on a Cu85Ni15 alloy substrate from a single nucleus[39]. Copyright 2016 Springer Nature. (c) Experimental design of oxygen continuous feeding for optimized graphene synthesis on copper. (d) Large graphene domains formed on the back surfaces of copper foils[54]. Copyright 2016 Springer Nature. (e) Seed crystal growth of single-crystal 2H-MoTe₂ wafers. (f) Optical image of the 2H-MoTe2 wafer[62]. Copyright 2021The American Association for the Advancement of Science. (g) Schematic illustrations of the vapor-liquid-solid (VLS) growth mechanism in confined-space CVD using a substrate-stacked microreactor configuration[63]. Copyright 2022 American Chemical Society. (h) The schematic diagram of the epitaxial growth of large MoS2 domain by the 2DCZ method[65]. Copyright 2025 Springer Nature.

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Fig. 3.  (Color online) VdW epitaxial growth of single-crystal graphene. (a) The evolution mechanism diagram of a large single-crystal Cu (111) foil. (b) Optical image of randomly distributed holes generated by H2 etching on the graphene film[40]. Copyright 2017 Elsevier B.V. and Science China Press. (c) SEM image of graphene seeds. (d) The synthesis of graphene on a 5.08-cm Ge/Si (110) wafer[76]. Copyright 2014 The American Association for the Advancement of Science. (e) SEM image of graphene domains grown on CuNi (111). (f) A 4-inch CuNi (111) thin film synthesized on a sapphire substrate[41]. Copyright 2019 Elsevier B.V. and Science China Press.

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Fig. 4.  (Color online) Step-guided epitaxial growth of single-crystal TMD. (a) Schematic diagrams for the growth process of the unidirectional hBN domains on the single-crystal Cu (110) surface. (b) SEM image of unidirectionally arranged hBN domains growing on the surface of Cu (110)[42]. Copyright 2019 Springer Nature. (c) The epitaxial mechanism of Ni (110) bevel-edge steps conforming the formation of rBN with ABC-stacking. (d) SEM image of the multilayer triangular domain on the stepped Ni (520) surface[94]. Copyright 2024 Springer Nature. (e) Schematic illustration of the unidirectionally aligned MoS2 on Au (111). (f) Two kinds of step edges (A-step and B-step) along the <110> direction on the Au (111) surface[43]. Copyright 2020 American Chemical Society. (g) Step orientations along <$11 \bar{2}0 $> and <$ 10\bar{1} 0$> on C/M and C/A sapphire (0001) wafers and the corresponding MoS2 epitaxial growth[96]. Copyright 2021 Springer Nature. (h) Schematic diagram for interfacial epitaxy of multilayer 3R-TMD single crystals[97]. Copyright 2024 The American Association for the Advancement of Science.

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Fig. 5.  (Color online) Non-step-guided epitaxial growth of single-crystal TMD. (a) Optical image of the aligned arrangement of WS2 islands along the <$11 \bar{0}0 $> direction of a-sapphire. (b) The atomic force microscopy (AFM) image of a WS2 island[44]. Copyright 2022 Springer Nature. (c) Optical image of unidirectionally aligned MoS2 grains on c-Al2O3. (d) The MoS2 grain on three types of step edges[91]. Copyright 2023 Springer Nature. (e) C-plane sapphire terraces with the single-type exposing surface. (f) Unidirectional MoS2 seeds grow on monotype terraces on the surface of c-sapphire[92]. Copyright 2023 Springer Nature. (g) Unidirectionally aligned MoS2 domains enabled by buffer layer control strategy[99]. Copyright 2024 Springer Nature. (h) Optical image of aligned bilayer WS2 islands. (i) Schematic diagrams of the remote sapphire step-TMD interaction[100]. Copyright 2024 Springer Nature.

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    Received: 13 March 2025 Revised: 07 April 2025 Online: Accepted Manuscript: 14 May 2025Uncorrected proof: 19 May 2025

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      Jinxia Bai, Chi Zhang, Fankai Zeng, Jinzong Kou, Jinhuan Wang, Xiaozhi Xu. Nucleation control for the growth of two-dimensional single crystals[J]. Journal of Semiconductors, 2025, In Press. doi: 10.1088/1674-4926/25030023 ****J X Bai, C Zhang, F K Zeng, J Z Kou, J H Wang, and X Z Xu, Nucleation control for the growth of two-dimensional single crystals[J]. J. Semicond., 2025, accepted doi: 10.1088/1674-4926/25030023
      Citation:
      Jinxia Bai, Chi Zhang, Fankai Zeng, Jinzong Kou, Jinhuan Wang, Xiaozhi Xu. Nucleation control for the growth of two-dimensional single crystals[J]. Journal of Semiconductors, 2025, In Press. doi: 10.1088/1674-4926/25030023 ****
      J X Bai, C Zhang, F K Zeng, J Z Kou, J H Wang, and X Z Xu, Nucleation control for the growth of two-dimensional single crystals[J]. J. Semicond., 2025, accepted doi: 10.1088/1674-4926/25030023
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      Nucleation control for the growth of two-dimensional single crystals

      DOI: 10.1088/1674-4926/25030023
      CSTR: 32376.14.1674-4926.25030023
      • 1.

        Guangdong Basic Research Center of Excellence for Structure and Fundamental Interactions of Matter, Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, School of Physics, South China Normal University, Guangzhou 510006, China

      • 2.

        Guangdong−Hong Kong Joint Laboratory of Quantum Matter, Frontier Research Institute for Physics, South China Normal University, Guangzhou 510006, China

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      • Jinxia Bai is currently a Ph.D. student at School of Physics, South China Normal University, Guangzhou, China. Her research focuses on the preparation and characterization of 2D materials
      • Chi Zhang is currently a Ph.D. student at School of Physics, South China Normal University, Guangzhou, China. His research focuses on the preparation and characterization of 2D materials
      • Jinhuan Wang received her doctoral degree from Beijing Institute of Technology, Beijing, China, in 2022. She is currently an associate research fellow in South China Normal University, Guangzhou, China. Her research interests are focused on study of 2D materials preparation and characterization
      • Xiaozhi Xu received his doctoral degree from Peking University, Beijing, China, in 2017. He is currently a professor in South China Normal University, Guangzhou, China. His research interests are focused on low-dimensional materials and surface physics
      • Corresponding author: jinhuanwang@scnu.edu.cn; xiaozhixu@scnu.edu.cn
      • Received Date: 2025-03-13
      • Revised Date: 2025-04-07
        • Available Online: 2025-05-14

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