Dual-band photodetectors represent one of the important development directions of the third-generation focal plane photodetectors. Type Ⅱ superlattice (T2SL) has emerged as a promising candidate for fabricating long-wavelength dual-band or multi-band infrared photodetectors due to its merits including engineerable band gap, low manufacturing cost and excellent uniformity. In this work, a long/long-wavelength dual-band photodetector with an NMπP-B-PπMN structure based on InAs/GaSb T2SL is reported. The cutoff wavelengths of the two bands are 7.8 and 11.2 μm, respectively. At 77 K, the short long-wavelength channel exhibits a peak quantum efficiency of 20.19%, a peak detectivity of 1.26 × 10¹⁰ Jones and dark current density of 0.91 × 10^–2 A/cm²; the long/long-wavelength channel achieves a peak quantum efficiency of 28.94%, a peak detectivity of 7.36 × 10⁹ Jones and dark current density of 6.03 × 10^–2 A/cm². The device demonstrates high performance, laying a solid foundation for the fabrication of long/long-wavelength dual-band focal plane photodetectors.

With the rapid development of the Internet of Things (IoT) and wearable electronics, tactile sensors play an indispensable role in intelligent sensing systems. However, traditional tactile sensing systems follow the von Neumann architecture, where sensors and processing units are physically separated. This leads to frequent data transfer of large raw data volumes, causing high latency and energy consumption. Such bottlenecks cannot meet the requirements of real-time closed-loop control and edge intelligence. Inspired by the highly integrated "perception-storage-computation" mechanism of biological sensory systems, memristor-based neuromorphic computing offers a groundbreaking solution beyond conventional approaches. Memristors combine non-volatile storage with tunable resistance. They enable in-situ emulation of synaptic plasticity, in-memory computing, and brain-inspired processing, thereby holding the potential to significantly improve the energy efficiency and response speed of tactile systems. This review systematically discusses the physical mechanisms of mainstream memristors, highlights recent progress in memristor-based neuromorphic computing for tactile sensing, and outlines key challenges and future directions for neuromorphic tactile perception systems.

Progress in understanding optoelectronic properties of the two-dimensional (2D) transition metal carbides and nitrides (MXenes) is hindered by a dearth of exploring novel intrinsic semiconductor materials from MXene families. Here, we prepared 2D Ti₄N₃ MXene nanoflakes via the molten salt etching method, which was then employed to fabricate a flexible broadband near-infrared (NIR) photodetector. The assembled Ti₄N₃ MXene based photodetector exhibits a stable response to the lasers of 808, 852, 915, 980, and 1060 nm. Under high-power IR illumination, the device deviates entirely from conventional positive photoconductivity, displaying an anomalous superlinear negative photoresponse with a power-law exponent of α = 1.54 and a response time of ~0.7 s. The negative photoconductivity behavior of the Ti₄N₃ MXene based devices is driven by a robust photothermal-ionotronic coupling mechanism: the intense IR-induced local heating heavily disrupts the interfacial hydrogen-bonding networks, triggering an Arrhenius-type non-linear desorption of confined water and protons that effectively disconnects the ionic conduction pathways. This work provides fundamental insights into the photothermal-dominated carrier and ion dynamics in 2D materials, paving the way for next-generation optoelectrical devices and neuromorphic sensory systems.

Organic electrochemical transistors (OECTs), leveraged by their unique volumetric doping mechanism and ultra-high transconductance performance, have emerged as a pivotal device platform for constructing high-performance bioelectronic interfaces. OECT-based theranostics aim to develop intelligent closed-loop systems that integrate sensing, decision-making, and execution, thereby overcoming the latency and discretization limitations of traditional medical models when managing dynamic physiological fluctuations. This article systematically reviews the performance evolution of OECT materials from p-type to n-type, discusses critical strategies for enhancing device stability and transconductance density, such as side-chain engineering and ladder-type molecular design, while emphasizing the essential role of complementary logic circuits in minimizing the static power consumption of implantable electronics. Furthermore, breakthroughs in OECT-based neuromorphic computing are addressed; by simulating synaptic plasticity (STP/LTP) and engineering organic electrochemical neurons (OECNs), a highly efficient sensing-computing closed-loop architecture has been realized. The current application landscape of OECTs in electrophysiological monitoring, neurochemical sensing, and multimodal synergistic sensing is detailed, alongside a summary of high-density array fabrication and system integration strategies, including 3D printing, inkjet printing, and 3D hydrogel integration. Finally, future outlooks are provided, focusing on challenges such as the environmental stability of n-type materials, multimodal signal crosstalk, and long-term clinical reliability.

AlGaN-based ultraviolet (UV) laser diodes (LDs), with emission wavelength in the 280–365 nm range, are promising for applications in medical diagnostics and biological sensing, making them a prominent research focus in both academia and industry in recent years. A key challenge in their development is the large stress induced during the epitaxial growth of LD structures, which arises from the lack of lattice-matched substrates, and severely degrades the quantum efficiency and overall LD performance. This study presents an in-depth investigation into the growth mode and stress evolution of thick Al_0.2Ga_0.8N template. Firstly, we used the compressive stress between the Al_0.2Ga_0.8N layer and AlN/Sapphire substrate to form spontaneously three-dimensional growth to annihilate dislocations. Secondly, based on the Nakajima's theory of elasticity, we refined the conventional theoretical models for AlGaN strain relaxation of the S–K growth mode and critical thickness by considering the crucial role of threading dislocations (TDs) in releasing compressive stress. The experimentally measured critical thickness for three-dimensional growth was consistent with the calculated results. Furthermore, a crack-free high-quality 5 μm-thick Al_0.2Ga_0.8N template was successfully grown on an AlN/sapphire substrate.

Electrode design is critical for the performance and reliability of flip-chip AlGaN-based deep-ultraviolet light-emitting diodes (DUV LEDs). We propose a semi-surround n-electrode design to achieve better current spreading for a relatively small DUV LED with a size of 8×15 mil². It is found that an optimal semi-surround n-electrode can reduce the operating voltage and increase the chip reliability due to the larger ohmic contact area. Moreover, the semi-surround n-electrode introduces multiple current injection paths, which causes the improvement of the current spreading in both the directions parallel (X) and perpendicular (Y) to the electrode fingers. However, an excessively long semi-surround n-electrode will decrease the light output power because of the severely reduced active region area. Furthermore, experiments and simulations reveal that the semi-surround n-electrode can improve the current spreading in theY-direction at high injection current. Meanwhile, it is also found that a short semi-surround n-electrode causes deteriorated current spreading in the X-direction due to the unbalanced resistance between n-electrode and p-electrode. Our work highlights the importance of two-dimensional current management in electrode design and provides a practical strategy for developing high-performance and reliable DUV LEDs with a relatively small chip size.

Accurate and quantitative evaluation of human fatigue status is of crucial importance to safe outdoor operations and personal health management. Electroencephalography (EEG) technology offers a non-invasive, rapid and high-accuracy feasible solution, yet it still faces challenges such as large device volume and unstable electrode-skin interface. In this work, we propose a wearable intelligent EEG platform for real-time monitoring and assessment of human fatigue status. A flexible dual-channel (FP1, FP2) EEG patch was fabricated in flexible PET film by coupling screen-printed carbon powder/graphene oxide electrodes with a biocompatible polyacrylic acid/polyvinyl alcohol (PAA/PVA) hydrogel. Among them, the composite carbon structure and the hydrogel provide a low interfacial impedance (98.3 Ω·cm²@1 kHz), skin-matched mechanical modulus (3.5 kPa) and a skin-conformal (296 kPa adhesion strength) electronic interface, respectively, laying a solid foundation for acquiring high-quality and stable EEG signals. Furthermore, a smartphone APP was developed to wirelessly operate the EEG platform, as well as to transmit and process real-time EEG data. To verify the effectiveness, a multi-state simulation-induced fatigue test was conducted. The results demonstrate that the proposed EEG platform can detect the EEG spectrum and conduct rhythmic classification processing, in which the θ/β value (>1.5) could serve as a reliable indicator of fatigue, enabling quantitative evaluation and early warning of human fatigue.

This work fabricates a vertical channel-all-around indium−gallium−zinc-oxide field-effect transistor(CAA IGZO FET) through reasonable etching process and annealing optimization. The resulting device exhibits has a normalized on-current (I_ON) of 87.1 μA/μm, and a subthreshold swing (SS) of approximately 66.98 mV/Dec. These performance parameters are twice as good as similar work obtained in previous experiments, which is sufficient to meet the requirements for manufacturing 2T0C DRAM units. Moreover, with the double-layer stacking of this structure , the feasibility and scalability of manufacturing DRAM units with CAA IGZO FET is verified.

High performance flexible pressure sensors, as a very important group of electronic component for information transmission and collection, have gained widespread attention. Herein, Ti₂CT_x MXene nanosheets were vertically grown on carbon cloth substrate (Ti₂CT_x@CC) via the simple sintering and subsequent etching process. Flexible pressure sensors featuring the Ti₂CT_x MXene nanosheets as the sensitive material were then fabricated using polyvinylidene fluoride (PVDF) film weaved by the electrospinning route between the sensitive material and the interdigital electrodes to improve the sensitivity. As-fabricated flexible sensor exhibited superior performances including high sensitivity up to 3109.2 kPa⁻¹, good response and recovery time of 80/80 ms, and favorable stability over 8000 loading/unloading cycles. Boasting the high sensitivity across a broad range, the sensor can in real-time capture a spectrum of human activities—from the faint pulse signal to the large pressure of joint activities and shows promising capability for mapping spatial pressure distribution.

Fluorescence temperature sensing technology has become a research direction in the field of temperature measurement with its significant advantages of non-contact measurement, high spatial resolution, fast response and anti-electromagnetic interference. Although the double rare earth ion doping ratio fluorescent temperature sensing materials have made significant progress, the thermal quenching phenomenon is still the key bottleneck restricting its performance improvement. In this study, we propose to construct a flexible Sc₂Mo₃O₁₂:Eu³⁺/Tb³⁺ film with negative thermal expansion characteristics, and systematically study its visual temperature sensing characteristics. The negative thermal expansion characteristics of Sc₂Mo₃O₁₂ matrix effectively inhibited the thermal quenching rate of Tb³⁺ luminescence, and enhanced the thermal enhanced luminescence effect of Eu³⁺. This two-way regulation mechanism improves the intensity comparison of the two light-emitting channels, and provides an innovative strategy for improving the sensitivity of temperature sensing. The flexible film based on Eu³⁺/Tb³⁺ codoped system realizes intuitive temperature perception through the significant change of fluorescent color, and can complete the temperature interpretation without complex spectral equipment. This greatly expands its application prospect in the field of rapid field detection and real-time monitoring, and shows its broad potential in the fields of wearable devices, biomedical diagnosis, and real-time monitoring of surface temperature field.

Stretchable bioelectrodes need both conductivity and deformation stability, but the conductive pathways of traditional rigid materials are prone to instability during stretching. In this study, polyaniline coated graphite powder (PANI@G) core shell fillers were constructed through the in situ oxidative polymerization of aniline and were sprayed onto a styrene-ethylene/butylene-styrene block copolymer (SEBS) substrate to prepare stretchable conductive films. The PANI coating layer improved the connection between graphite lamellae through interfacial interactions among nitrogen containing groups, oxygen containing functional groups, and conjugated structures. As a result, the film retained approximately 89% of its initial current at 75% strain, and the current drift was only 2.3% during 126 min of continuous stretching at 50% strain. The film was further patterned into lightweight flexible electrodes and realized electrical signal acquisition induced by electrical stimulation, providing an effective strategy for wearable flexible electrodes.

This paper presents a reconfigurable eight-contact Hall device fabricated in the 180 nm BCD (Bipolar-CMOS-DMOS) process, providing a cost-effective solution for high-precision and wideband magnetic/current sensing. The device structural design supports two distinct operating modes: static biasing and spinning-current dynamic biasing. For wideband sensing, the static mode utilizes intrinsic orthogonal symmetry to achieve effective static offset cancellation. In contrast, the dynamic mode employs the spinning-current technique to achieve a remarkably low residual offset for high-precision low-frequency detection. To enhance the absolute sensitivity (S_A) and ensure electrical matching across both modalities, doping profiles and junction depths are meticulously optimized. Experimental results demonstrate that the device in static mode achieves a high S_A of 283 mV/T at 1200 μA, representing an 89% improvement over existing X-Hall devices, with an initial offset standard deviation (σ) of only 0.216 mV. In the dynamic mode, the device yields a matched S_A of 281 mV/T and a remarkably low residual offset of 27 μV. Notably, the input resistance remains highly consistent across both modalities (3.14 and 3.32 kΩ). This reconfigurable architecture provides a robust device-level foundation for wideband sensing in demanding power electronic applications.

Lead halide perovskites with the ABX₃ formula are limited by their small B-site ions, which hinder the incorporation of large ions into their three-dimensional BX₃ frame. Through high-throughput computational screening based on first-principle calculations and stringent structural constraints, we identified two promising candidates from 81 initial perovskites. These optimized materials feature a quasi-cubic, lead-free structure with a direct band gap suitable for solar cell applications, and minimal deformation of ions. The quasi-cubic (SCs₃)(CLi₆)F₃ superatom perovskite exhibit the direct band gap, s−p and p−p electron transitions, small carrier effective masses, and high efficiency. Additionally, (SCs₃)(CLi₆)F₃ superatom perovskite demonstrate N-type and P-type characteristics through occupying sulfur vacancies with Cl and P atoms, respectively, indicating that they may be used as electron and hole transport layers. This work implies the potential of superatom perovskites to overcome limitations of traditional perovskites.

Electromyography (EMG) is widely used in sports rehabilitation to evaluate muscle activation, coordination, fatigue, and functional recovery, yet reliable recording remains limited by the electrode-skin interface during repeated motion and prolonged wear. Microneedle electrodes offer a distinct interface strategy by penetrating the stratum corneum and forming lower-impedance, more stable electrical contact than conventional wet or dry electrodes. This review discusses microneedle electrodes for EMG acquisition in sports rehabilitation from a design-to-application perspective. We first clarify the interface requirements of EMG recording in rehabilitation settings and the technical rationale for using microneedle interfaces. We then summarize material and structural design strategies in silicon-, polymer-, and metal-based systems, focusing on how they balance penetration capability, mechanical compliance, stretchability, conductivity, and recording stability. Fabrication routes are further examined in terms of material-structure-process coupling, followed by applications in static assessment, dynamic motion monitoring, and clinical rehabilitation evaluation. This review integrates interface requirements, design, manufacturing, and validation to provide a structured overview of microneedle EMG electrodes' capabilities and limitations for sports rehabilitation.

Spin−orbit torque (SOT) is widely considered as the key technology for next-generation magnetic random-access memory (MRAM), leveraging ultrafast operating speed and unlimited endurance. However, integrating perpendicular magnetic anisotropy (PMA) SOT-MRAM stacks with the back-end-of-line (BEOL) thermal budget remains a critical challenge, as PMA degradation and Pt−Fe interdiffusion typically occur under 400 °C annealing. Here we propose a double CoFeB reference layer (DCFB) structure to address these issues. The additional CoFeB reference layer and two extra CoFeB/W interfaces significantly enhance the PMA of the reference layers, while improving the crystallization of the overlying Pt/Co multilayers. Furthermore, the DCFB stack effectively acts as a diffusion barrier against Pt−Fe interdiffusion. Consequently, a fabricated magnetic tunnel junction (MTJ) incorporating the DCFB stack achieves a high tunneling magnetoresistance (TMR) of 137% even after annealing at 400 °C. Our work provides a robust, simplified approach for the design of SOT-MRAM stacks with BEOL thermal budget tolerance.

A skipper image sensor (SIS) with lateral overflow gate-coupled capacitor (LOGCC) is proposed in this work. During the integration period, the transfer gates after TG are switched on to construct a LOGCC with specific operation timing. Once high light illumination fully charges the pinned photodiode (PPD), the extra photogenerated electrons will overflow to LOGCC, which effectively improve the dynamic range (DR) of SIS. Before the readout of signal in PPD, the electrons stored in LOGCC are sampled and then reset through the floating diffusion (FD). In the end, the electrons in PPD are sampled by the method of the conventional skipper pixels. According to TCAD simulation results, the extra electrons are transferred to LOGCC through the TG effectively. Measurement of prototype chip shows that the DR is extended to 89.3 dB. As contrast, the DR is 66 dB when switching off the transfer gates, i.e. LOGCC. Compared with traditional SIS, the proposed architecture achieved DR extension by introducing LOGCC which is constructed with transfer gates. Therefore, this study proposes the introduction of LOGCC to expand the application scenarios of SIS, providing a new approach for its use in conditions requiring stronger light.

The integration of two-dimensional (2D) semiconductors with mainstream complementary metal−oxide−semiconductor (CMOS) technology is hampered by the limited ability to adjust device performance after fabrication. Here, we present a differential Schottky-barrier tuning strategy to post-customize the optoelectronic performance based on a two-dimensional asymmetric Schottky contact WSe₂ photodiode, eliminating the need for device re-fabrication. A brief, room-temperature ozone exposure (1.5 min) enables in-situ tuning of the rectification ratio across three orders of magnitude (from 10² to 10⁵) and enhances the peak responsivity at 532 nm by 11.2 times. These effects stem from differential modulation of Schottky barrier height (SBH) at the asymmetric contacts. While the SBH at the WSe₂/Au interface is reduced, the SBH at the WSe₂/graphene junction is elevated, a phenomenon unlocked by the combination of oxidation-induced Fermi-level lowering in WSe₂ and interfacial dipole modification. Our method establishes a "device-after-design" paradigm for 2D material engineering, providing a CMOS-compatible and versatile route toward adaptive optoelectronics for applications in wearable sensing and reconfigurable photonic systems.

Achieving simultaneous phase stabilization and ultralow leakage remains a fundamental challenge for ZrO₂-based high-k dielectrics. This work demonstrates high-performance 5.7 nm ZrO₂-based metal-insulator-metal capacitors through coordinated interfacial engineering and defect passivation. The AlZrO alloy interfacial layer preserves lattice coherence and provides an interfacial barrier while stabilizing the anti-ferroelectric tetragonal phase ZrO₂, enabling an equivalent oxide thickness of 0.89 nm. Subsequent in-situ remote O₂ plasma treatment passivates oxygen vacancies via radical oxidation without inducing plasma damage. As a result, the capacitors achieve an ultralow leakage current density of 3×10⁻¹⁰ A/cm² at 1 V, a breakdown voltage exceeding 5 V, and a projected 10-year operating voltage above 2.4 V based on time-dependent dielectric breakdown extrapolation. All processes are conducted below 350 °C, ensuring back-end-of-line (BEOL) compatibility. These results demonstrate a pathway toward simultaneous dielectric constant enhancement, leakage suppression, and long-term reliability in ultrathin ZrO₂-based high-k dielectrics.

The integration of proximity sensing into flexible tactile electronic skins (e-skins) represents a fundamental shift from conventional contact-only interfaces toward anticipatory perception systems. This mini-review provides a systematic examination of recent advances in proximity-augmented e-skins, which overcome the inherent latency of tactile sensors by extending sensory awareness into the pre-contact domain. We provide a comprehensive overview of five key sensing modalities—capacitive, triboelectric, magnetic, temperature-based, and humidity-based—detailing their operating principles, material innovations, and structural optimization strategies. System-level requirements for practical deployment are also critically analyzed. Representative applications in interactive surfaces, human–robot collaboration, soft robotics, healthcare monitoring, and integrated multifunctional e-skins are highlighted to illustrate the transformative potential of this technology. Despite substantial progress, challenges persist in seamless multimodal integration, scalable manufacturing, and intelligent data fusion. Future directions are discussed to realize robust, perceptually intelligent e-skins that bridge the gap between laboratory innovations and real-world applications.

In recent years, position-sensitive detectors (PSDs) have found widespread application in displacement measurement, optical measurement, imaging, and laser communication, owing to their high spatial resolution and rapid response capabilities. However, the performance and operating mechanisms of perovskite-based PSDs remain insufficiently elucidated. In this work, we fabricated a high-sensitivity self-powered PSD based on a ZnO/P(VDF-TrFE)−CH₃NH₃PbI₃(MAPbI₃) heterojunction. Systematic optimization revealed an optimal P(VDF-TrFE) doping concentration of 5 mg/mL, enabling the device to achieve a remarkable positional sensitivity (PS) of 307.03 mV/mm with a minimum nonlinearity of 1.02%. Furthermore, the intrinsic pyroelectric property of P(VDF-TrFE) induces a significant pyroelectrically enhanced lateral photovoltaic effect (LPE), boosting the PS to 511.33 mV/mm—an enhancement of 166.5%. The heterojunction PSD maintains effective operational performance over an electrode spacing range of 0.5−2.2 mm. While the LPE response declines with increasing spacing, a considerable pyroelectric effect (PE)-enhanced PS of 70.67 mV/mm is retained even at 2.2 mm. Importantly, we demonstrate multi-wavelength imaging by exploiting both the inherent LPE response and its pyroelectrically enhanced counterpart, with imaging intensity tunable via electrode spacing control. This study provides crucial insights into the LPE behavior of the heterojunction and systematically clarifies the mechanism by which the PE modulates device performance and imaging capabilities.