High-speed wavelength division multiplexing silicon photonics receiver chip based on silicon arrayed waveguide grating

Zhipeng Liu; Yiling Hu; Zhi Liu; Jiashun Zhang; Jun Zheng; Xiaojie Yin; Yuhua Zuo; Junming An; Buwen Cheng

doi:10.1088/1674-4926/25050018

J. Semicond. > In Press

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High-speed wavelength division multiplexing silicon photonics receiver chip based on silicon arrayed waveguide grating

Zhipeng Liu^{1, 2, §}, Yiling Hu^{1, 2, §}, Zhi Liu^{1, 2,}, Jiashun Zhang^{1, 2}, Jun Zheng^{1, 2}, Xiaojie Yin^{1, 2}, Yuhua Zuo^{1, 2}, Junming An^{1, 2} and Buwen Cheng^{1, 2}

+ Author Affiliations

Corresponding author: Zhi Liu, zhiliu@semi.ac.cn

DOI: 10.1088/1674-4926/25050018CSTR: 32376.14.1674-4926.25050018

Abstract: Wavelength division multiplexing technology has been pivotal in addressing the demand for high-capacity optical communication with silicon photonics providing a promising platform. This work presents a 16-channel wavelength division multiplexing silicon photonics receiver chip composed of an arrayed waveguide grating and Ge-on-Si photodetectors. Integrated inductors are introduced to enhance the high-speed performance of photodetectors, enabling data rates up to 112 Gbps with high responsivity and low dark current. The operating wavelength range of the arrayed wavelength grating is adjusted according to the response of the Ge-on-Si photodetector. The optical insertion loss, cross talk and central wavelength of the array waveguide grating are 2.1 to 3.7 dB, −12 to −15 dB, and 1538 nm, respectively. The proposed receiver chip offers a solution to meet the challenges of modern data transmission requirements.

Key words: silicon photonics, WDM, AWG, photodetector

References

[1]	Shekhar S, Bogaerts W, Chrostowski L, et al. Roadmapping the next generation of silicon photonics. Nat Commun, 2024, 15(1), 751 doi: 10.1038/s41467-024-44750-0
[2]	Liu Z, Zhang J S, Li X L, et al. 25 × 50 Gbps wavelength division multiplexing silicon photonics receiver chip based on a silicon nanowire-arrayed waveguide grating. Photon Res, 2019, 7(6), 659 doi: 10.1364/PRJ.7.000659
[3]	Moralis-Pegios M, Mourgias-Alexandris G, Tsakyridis A, et al. Neuromorphic silicon photonics and hardware-aware deep learning for high-speed inference. J Light Technol, 2022, 40(10), 3243 doi: 10.1109/JLT.2022.3171831
[4]	He X Y, Guo P X, Sun W, et al. CPDM-PCNN: A compact and power efficient photonic convolutional neural network accelerator based on dual-function microring resonators. Opt Laser Technol, 2025, 188, 112889 doi: 10.1016/j.optlastec.2025.112889
[5]	Fang Z R, Chen R, Zheng J J, et al. Ultra-low-energy programmable non-volatile silicon photonics based on phase-change materials with graphene heaters. Nat Nanotechnol, 2022, 17(8), 842 doi: 10.1038/s41565-022-01153-w
[6]	Totovic A, Giamougiannis G, Tsakyridis A, et al. Programmable photonic neural networks combining WDM with coherent linear optics. Sci Rep, 2022, 12(1), 5605 doi: 10.1038/s41598-022-09370-y
[7]	Kabir M A, Taharat A, Keats A I, et al. High-performance demultiplexer-based lab-on-bio-chip sensor leveraging silicon photonics for point-of-care detection of hemoglobin and blood calcium ion levels. Opt Express, 2025, 33(9), 19788 doi: 10.1364/OE.554834
[8]	Kozdrowski S, Żotkiewicz M, Sujecki S. Ultra-wideband WDM optical network optimization. Photonics, 2020, 7(1), 16 doi: 10.3390/photonics7010016
[9]	Yoo S J B. Wavelength conversion technologies for WDM network applications. J Light Technol, 1996, 14(6), 955 doi: 10.1109/50.511595
[10]	Chen L, Doerr C R, Buhl L, et al. Monolithically integrated 40-wavelength demultiplexer and photodetector array on silicon. IEEE Photonics Technol Lett, 2011, 23(13), 869 doi: 10.1109/LPT.2011.2141128
[11]	Won R. Integrating silicon photonics. Nature Photon, 2010, 4(8), 498 doi: 10.1038/nphoton.2010.189
[12]	Fang Q, Liow T Y, Song J F, et al. WDM multi-channel silicon photonic receiver with 320 Gbps data transmission capability. Opt Express, OE, 2010, 18(5), 5106 doi: 10.1364/OE.18.005106
[13]	Ye M Y, Li Y L, Zhang W L, et al. Multi-mode transmitter based on silicon microring modulators. IEEE Photonics J, 2022, 14(4), 6640504 doi: 10.1109/JPHOT.2022.3189438
[14]	Zhang Z, Li H, Huang B J, et al. Multi-channel silicon photonic receiver based on compact second-order microring resonators. Opt Commun, 2019, 437, 168 doi: 10.1016/j.optcom.2018.12.067
[15]	Feng D Z, Qian W, Liang H, et al. High-speed receiver technology on the SOI platform. IEEE J Sel Top Quantum Electron, 2013, 19(2), 3800108 doi: 10.1109/JSTQE.2012.2213804
[16]	Li K L, Zhang J S, An J M, et al. Design and fabrication of 25-channel 200 GHz AWG based on Si nanowire waveguides. Optoelectron Lett, 2017, 13(4), 241 doi: 10.1007/s11801-017-7076-8
[17]	Cui J L, Zheng J, Zhu Y P, et al. Sn component gradient GeSn photodetector with 3 dB bandwidth over 50 GHz for extending L band telecommunication. Opt Lett, 2023, 48(23), 6148 doi: 10.1364/OL.504190
[18]	Liu Z, Yang F, Wu W Z, et al. 48 GHz high-performance Ge-on-SOI photodetector with zero-bias 40 gbps grown by selective epitaxial growth. J Light Technol, 2017, 35(24), 5306 doi: 10.1109/JLT.2017.2766266
[19]	Li X L, Zhu Y P, Liu Z, et al. 75 GHz germanium waveguide photodetector with 64 Gbps data rates utilizing an inductive-gain-peaking technique. J Semicond, 2023, 44(1), 012301 doi: 10.1088/1674-4926/44/1/012301
[20]	Peng Y Y, Cao H Z, Xie J, et al. Silicon photonic transmitter and receiver for hybrid multiplexing systems. Chip, 2025, 4(4), 100148 doi: 10.1016/j.chip.2025.100148

Fig. 1. (Color online) (a) Top-view optical microscope images of the WDM receiver chip. (b) Top-view optical microscope images of the AWG. (c) Cross-section view of the Ge-on-Si waveguide photodetector.

DownLoad: Full-Size Img PowerPoint

Fig. 2. (Color online) (a) Measured I−V curves of the individual photodetector with/without light incidence (1550 nm) from 1 to −3 V. (b) Spectral responsibility of the individual photodetector from 1500 to 1630 nm under −1 V.

DownLoad: Full-Size Img PowerPoint

Fig. 3. (Color online) (a) Experimental setup for small-signal radio frequency (RF) response measurement. Representing the electrical and optical links are the black and red lines, respectively. VNA, vector network analyzer; PC, polarization controller; LN MZM, lithium niobate Mach−Zehnder modulator; DUT, device under test. (b) Normalized optic-electro frequency response of an individual photodetector under the bias voltages of 0 to −4 V.

DownLoad: Full-Size Img PowerPoint

Fig. 4. (Color online) (a) Photocurrent spectrum of every channel of the WDM receiver chip. (b) Transmission spectra of the 16-channel AWG.

DownLoad: Full-Size Img PowerPoint

Fig. 5. (Color online) Experimental setup for large-signal eye diagrams measurement. Representing the electrical and optical links are the black and red lines, respectively. VNA, vector network analyzer; PC, polarization controller; LN MZM, lithium niobate Mach−Zehnder modulator; DUT, device under test; AWG, arbitrary waveform generator; RF Amp, RF amplifier.

DownLoad: Full-Size Img PowerPoint

Fig. 6. (Color online) (a) Measured 56 and 70 Gbps NRZ eye diagrams at −1 V from channels 4, 8, 12, and 16. (b) Measured 90 and 112 Gbps PAM-4 eye diagrams at −1 V from channels 4, 8, 12, and 16.

DownLoad: Full-Size Img PowerPoint

Table 1. The comparison of performance among silicon photonic WDM receivers.

Demultiplexer	Platform	Insertion loss (dB)	Cross talk (dB)	Wavelength range (nm)	Number of channels	Receiving bit rate per channel (Gbps)
MRM^[13]	220 nm SOI	3.6−5.2	<−20	1552–1554	2	25
MRR^[14]	200 nm SOI	2.5	<−30	1546–1557	8	10
MRR^[20]	–	1−2	<−15	1535–1560	20	50
AWG^[12]	300 nm SOI	1.5−4.5	<−18	1570–1620	32	10
AWG^[2]	220 nm SOI	5−8	<−12	1530–1580	25	50
This work: AWG	220 nm SOI	2.1−3.7	<−14	1526–1550	16	112

DownLoad: CSV

[1]	Shekhar S, Bogaerts W, Chrostowski L, et al. Roadmapping the next generation of silicon photonics. Nat Commun, 2024, 15(1), 751 doi: 10.1038/s41467-024-44750-0
[2]	Liu Z, Zhang J S, Li X L, et al. 25 × 50 Gbps wavelength division multiplexing silicon photonics receiver chip based on a silicon nanowire-arrayed waveguide grating. Photon Res, 2019, 7(6), 659 doi: 10.1364/PRJ.7.000659
[3]	Moralis-Pegios M, Mourgias-Alexandris G, Tsakyridis A, et al. Neuromorphic silicon photonics and hardware-aware deep learning for high-speed inference. J Light Technol, 2022, 40(10), 3243 doi: 10.1109/JLT.2022.3171831
[4]	He X Y, Guo P X, Sun W, et al. CPDM-PCNN: A compact and power efficient photonic convolutional neural network accelerator based on dual-function microring resonators. Opt Laser Technol, 2025, 188, 112889 doi: 10.1016/j.optlastec.2025.112889
[5]	Fang Z R, Chen R, Zheng J J, et al. Ultra-low-energy programmable non-volatile silicon photonics based on phase-change materials with graphene heaters. Nat Nanotechnol, 2022, 17(8), 842 doi: 10.1038/s41565-022-01153-w
[6]	Totovic A, Giamougiannis G, Tsakyridis A, et al. Programmable photonic neural networks combining WDM with coherent linear optics. Sci Rep, 2022, 12(1), 5605 doi: 10.1038/s41598-022-09370-y
[7]	Kabir M A, Taharat A, Keats A I, et al. High-performance demultiplexer-based lab-on-bio-chip sensor leveraging silicon photonics for point-of-care detection of hemoglobin and blood calcium ion levels. Opt Express, 2025, 33(9), 19788 doi: 10.1364/OE.554834
[8]	Kozdrowski S, Żotkiewicz M, Sujecki S. Ultra-wideband WDM optical network optimization. Photonics, 2020, 7(1), 16 doi: 10.3390/photonics7010016
[9]	Yoo S J B. Wavelength conversion technologies for WDM network applications. J Light Technol, 1996, 14(6), 955 doi: 10.1109/50.511595
[10]	Chen L, Doerr C R, Buhl L, et al. Monolithically integrated 40-wavelength demultiplexer and photodetector array on silicon. IEEE Photonics Technol Lett, 2011, 23(13), 869 doi: 10.1109/LPT.2011.2141128
[11]	Won R. Integrating silicon photonics. Nature Photon, 2010, 4(8), 498 doi: 10.1038/nphoton.2010.189
[12]	Fang Q, Liow T Y, Song J F, et al. WDM multi-channel silicon photonic receiver with 320 Gbps data transmission capability. Opt Express, OE, 2010, 18(5), 5106 doi: 10.1364/OE.18.005106
[13]	Ye M Y, Li Y L, Zhang W L, et al. Multi-mode transmitter based on silicon microring modulators. IEEE Photonics J, 2022, 14(4), 6640504 doi: 10.1109/JPHOT.2022.3189438
[14]	Zhang Z, Li H, Huang B J, et al. Multi-channel silicon photonic receiver based on compact second-order microring resonators. Opt Commun, 2019, 437, 168 doi: 10.1016/j.optcom.2018.12.067
[15]	Feng D Z, Qian W, Liang H, et al. High-speed receiver technology on the SOI platform. IEEE J Sel Top Quantum Electron, 2013, 19(2), 3800108 doi: 10.1109/JSTQE.2012.2213804
[16]	Li K L, Zhang J S, An J M, et al. Design and fabrication of 25-channel 200 GHz AWG based on Si nanowire waveguides. Optoelectron Lett, 2017, 13(4), 241 doi: 10.1007/s11801-017-7076-8
[17]	Cui J L, Zheng J, Zhu Y P, et al. Sn component gradient GeSn photodetector with 3 dB bandwidth over 50 GHz for extending L band telecommunication. Opt Lett, 2023, 48(23), 6148 doi: 10.1364/OL.504190
[18]	Liu Z, Yang F, Wu W Z, et al. 48 GHz high-performance Ge-on-SOI photodetector with zero-bias 40 gbps grown by selective epitaxial growth. J Light Technol, 2017, 35(24), 5306 doi: 10.1109/JLT.2017.2766266
[19]	Li X L, Zhu Y P, Liu Z, et al. 75 GHz germanium waveguide photodetector with 64 Gbps data rates utilizing an inductive-gain-peaking technique. J Semicond, 2023, 44(1), 012301 doi: 10.1088/1674-4926/44/1/012301
[20]	Peng Y Y, Cao H Z, Xie J, et al. Silicon photonic transmitter and receiver for hybrid multiplexing systems. Chip, 2025, 4(4), 100148 doi: 10.1016/j.chip.2025.100148

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Received: 19 May 2025 Revised: 08 August 2025 Online: Accepted Manuscript: 25 August 2025Uncorrected proof: 26 August 2025

Article Navigation > Journal of Semiconductors > 2025 > Uncorrected proof

Zhipeng Liu, Yiling Hu, Zhi Liu, Jiashun Zhang, Jun Zheng, Xiaojie Yin, Yuhua Zuo, Junming An, Buwen Cheng. High-speed wavelength division multiplexing silicon photonics receiver chip based on silicon arrayed waveguide grating[J]. Journal of Semiconductors, 2025, In Press. doi: 10.1088/1674-4926/25050018 ****Z P Liu, Y L Hu, Z Liu, J S Zhang, J Zheng, X J Yin, Y H Zuo, J M An, and B W Cheng, High-speed wavelength division multiplexing silicon photonics receiver chip based on silicon arrayed waveguide grating[J]. J. Semicond., 2025, accepted doi: 10.1088/1674-4926/25050018

Citation:

Z P Liu, Y L Hu, Z Liu, J S Zhang, J Zheng, X J Yin, Y H Zuo, J M An, and B W Cheng, High-speed wavelength division multiplexing silicon photonics receiver chip based on silicon arrayed waveguide grating[J]. J. Semicond., 2025, accepted doi: 10.1088/1674-4926/25050018

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High-speed wavelength division multiplexing silicon photonics receiver chip based on silicon arrayed waveguide grating

DOI: 10.1088/1674-4926/25050018

CSTR: 32376.14.1674-4926.25050018

Zhipeng Liu^{1, 2, §},
Yiling Hu^{1, 2, §},
Zhi Liu^{1, 2,},
Jiashun Zhang^{1, 2},
Jun Zheng^{1, 2},
Xiaojie Yin^{1, 2},
Yuhua Zuo^{1, 2},
Junming An^{1, 2},
Buwen Cheng^{1, 2}

1.
State Key Laboratory of Optoelectronic Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
2.
College of Materials Science and Opto-electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China

More Information

Zhipeng Liu received the B.S. degree from the University of Chinese Academy of Science, Beijing, China, in 2022. He is currently working toward the Ph.D. degree at the Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China. His research interests include high-speed silicon-based photodetectors
Yiling Hu received the B.S. degree from Nankai University, Tianjin, China, in 2022. Now she is working toward the Ph.D. degree at the Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China. Her research interests include high-speed silicon-based photodetectors and avalanche photodiodes
Zhi Liu received the Ph.D. degree from Institute of Semiconductors, Chinese Academy of Sciences, in 2014. Since 2014, he has been with the Institute of Semiconductors, Chinese Academy of Sciences. His research interests include silicon-based group IV material growth and silicon photonics
Corresponding author: zhiliu@semi.ac.cn
Received Date: 2025-05-19
Revised Date: 2025-08-08

Available Online: 2025-08-25

Abstract

Abstract

Wavelength division multiplexing technology has been pivotal in addressing the demand for high-capacity optical communication with silicon photonics providing a promising platform. This work presents a 16-channel wavelength division multiplexing silicon photonics receiver chip composed of an arrayed waveguide grating and Ge-on-Si photodetectors. Integrated inductors are introduced to enhance the high-speed performance of photodetectors, enabling data rates up to 112 Gbps with high responsivity and low dark current. The operating wavelength range of the arrayed wavelength grating is adjusted according to the response of the Ge-on-Si photodetector. The optical insertion loss, cross talk and central wavelength of the array waveguide grating are 2.1 to 3.7 dB, −12 to −15 dB, and 1538 nm, respectively. The proposed receiver chip offers a solution to meet the challenges of modern data transmission requirements.
- silicon photonics,
- WDM,
- AWG,
- photodetector

^§Zhipeng Liu and Yiling Hu contributed equally to this work.

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