β-Ga₂O₃ MOS inverter should play a crucial role in β-Ga₂O₃ electronic circuits. Enhancement-mode (E-mode) MOSFET was fabricated based on β-Ga₂O₃ film grown by atomic layer deposition technology, and the β-Ga₂O₃ inverter was further monolithically integrated on this basis. The β-Ga₂O₃ nMOSFET exhibits excellent electrical characteristics with an on/off current ratio reaching 10⁵. The logic inverter shows outstanding voltage inversion characteristics under low-frequency from 1Hz to 400Hz operation. As the frequency continues to increase to 10K, the reverse characteristic becomes worse due to parasitic capacitance induced by processes, and the difference between the highest and lowest values of V_OUT has an exponential decay relationship with the frequency. This paper provides the practice for the development of β-Ga₂O₃-based circuits.

Soft X-ray detectors play a vital role in materials science, high-energy physics and medical imaging. Cs₂AgBiBr₆, a lead-free double perovskite, has gained attention for its excellent optoelectronic properties, stability, and nontoxicity. However, its fast crystallization and requirement for high-temperature annealing (>250 °C) often lead to inferior film quality, limiting its application in flexible devices. This study introduces an alloying strategy that significantly improves the quality of Cs₂AgBiBr₆ thin films annealed at a reduced temperature of 150 °C. Devices based on the alloyed thin films exhibit an ultra-low dark current of 0.32 nA∙cm⁻² and a quantum efficiency of 725%. Furthermore, the first successful integration of Cs₂AgBiBr₆ with a thin-film transistor backplane demonstrates its superior imaging performance, indicating that Cs₂AgBiBr₆ is a promising material for next-generation soft X-ray sensors.

In this work, we demonstrated the InSnO (ITO) TFTs passivated with SiO₂ via the PECVD process compatible with large-area production for the first time. The passivated ITO TFTs with various channel thicknesses (t_ch=4, 5, 6 nm) exhibit excellent electrical performance and superior uniformity. The reliability properties of ITO TFTs were evaluated in detail under positive bias stress (PBS) conditions before and after passivation. Compared to the devices without passivation, the passivated devices have only 50% threshold voltage degradation (ΔV_th) and 50% newly generated traps due to excellent isolation of the ambient atmosphere. The negligible performance degradation of ITO TFTs with passivation during negative bias stress (NBS) and negative bias temperature stress (NBTS) verifies the outstanding immunity to the water vapor of the SiO₂ passivation layer. Overall, the ITO TFT with the t_ch of 6 nm and with SiO₂ passivation exhibits the best performance in terms of electrical properties, uniformity, and reliability, which is promising in large-area production.

The interfacial properties of Schottky contacts crucially affect the performance of power devices. While a few studies have explored the impact of fluorine on Schottky contacts, a comprehensive theoretical explanation supported by experimental evidence remains lacking. This work investigates the effects of fluorine incorporation and electrothermal annealing (ETA) on the current transport process at Ni/β-Ga₂O₃ Schottky contacts. X-ray photoelectron spectroscopy and first-principles calculations confirm the presence of fluorine substitutions for oxygen and oxygen vacancies and their lowering effect on the Schottky barrier heights. Additionally, accurate electrothermal hybrid TCAD simulations validates the extremely short-duration high temperatures (683 K) induced by ETA, which facilitates lattice rearrangement and reduces interface trap states. The interface trap states are quantitatively resolved through frequency-dependent conductance technique, showing the trap density (D_T) reduction from (0.88−2.48) × 10¹¹ cm⁻²·eV⁻¹ to (0.46−2.09) × 10¹¹ cm⁻²·eV⁻¹. This investigation offers critical insights into the β-Ga₂O₃ contacts with the collaborative treatment and solids the promotion of high-performance β-Ga₂O₃ power devices.