This work presents a systematic analysis of proton-induced total ionizing dose (TID) effects in 1.2 kV Silicon Carbide (SiC) power devices with various edge termination structures. Three edge terminations including ring-assisted junction termination extension (RA-JTE), multiple floating zone JTE (MFZ-JTE), and field limiting rings (FLR) were fabricated and irradiated with 45 MeV protons at fluences ranging from 1 × 10¹² to 1 × 10¹⁴ cm⁻². Experimental results, supported by TCAD simulations, show that the RA-JTE structure maintained stable breakdown performance with less than 1% variation due to its effective electric field redistribution by multiple P⁺ rings. In contrast, MFZ-JTE and FLR exhibit breakdown voltage shifts of 6.1 and 15.2%, respectively, under the highest fluence. These results demonstrate the superior radiation tolerance of the RA-JTE structure under TID conditions and provide practical design guidance for radiation-hardened SiC power devices in space and other high-radiation environments.

In this letter, we demonstrate the effect of γ irradiation on the lateral AlGaN/GaN Schottky barrier diodes (SBDs) with self-terminated recessed anode structure and low work-function metal tungsten (W) as anode. For a comprehensive evaluation of the radiation-resistance performance of the device, the total dose of γ irradiation is up to 100 kGy with irradiation time of 20 hours. Attributed to the barrier lowering effect of the W/GaN interface induced by γ irradiation observed in the experiment, the extracted turn-on voltage (V_ON) defined at anode forward current of 1 mA decreases from 0.47 to 0.43 V. Meanwhile, benefiting from the reinforced Schottky interface treated by post-anode-annealing, a high breakdown voltage (BV) of 1.75 kV is obtained for the γ-irradiated AlGaN/GaN SBD, which shows the promising application for the deep-space radiation environment and promotes the development of radiation-resistance research for GaN SBDs.