A monolithic integrated full-wave bridge rectifier consisted of horizontal Schottky-barrier diodes (SBD) is prepared based on 100 nm ultra-thin β-Ga₂O₃ and demonstrated the solar-blind UV (SUV) light-modulated characteristics. Under SUV light illumination, the rectifier has the excellent full-wave rectification characteristics for the AC input signals of 5 V, 12 V and 24 V with different frequencies. Further, experimental results confirmed the feasibility of continuously tuning the rectified output through SUV light-encoding. This work provides valuable insights for the development of optically programmable Ga₂O₃ AC-DC converters.

Along with NOR flash cell scaling down, dielectric burnout has gradually become one of the most important factors which affects product reliability, especially for high dropout voltage films. In this study, we demonstrate a reliability-enhanced NOR flash cell in 50 nm node technology through structural optimization of floating gate (FG) dimensions and active area profile. By synergistically increasing FG thickness, reducing FG width, and tuning cell-open depth, the control gate-to-active area corner distance expands by 22%, suppressing peak electric fields by 29% vertically and 18% horizontally. This structural innovation achieves: (1) 100× reduction in early-cycle burnout failures, (2) 7.38× Time Dependent Dielectric Breakdown lifetime improvement, while maintaining data retention and accelerating programming/erasing speeds by 15.4%/7.3%. The enhanced reliability enables 97.5% reduction in Fowler-Nordheim stress time during Characterization Program testing, providing a cost-effective solution for automotive-grade flash memories.

In vertical channel transistors (VCTs), source/drain ion implantation (I/I) represents a significant technical challenge due to inherent three-dimensional structural constraints, which induce complications such as difficulties in dummy gate formation and shadowing effects of I/I. This article systematically investigates the impact of different implantation conditions on the performance of VCTs with and without dummy gates through TCAD simulation. It reveals the significant role of the lightly doped regions (LDRs) naturally formed due to ion implantation in source/drain of VCTs. Furthermore, it was found that VCT without dummy gates can achieve an approximately 27% increase in on-state current (I_on) under the same implantation conditions, and can greatly simplify the process flow and reduce costs. Finally, N-type and P-type VCTs were successfully fabricated using this implantation method.

InAsN nanowires on InAs stems were obtained using plasma-assisted molecular beam epitaxy on a SiO_x/Si (111) substrate. Also, heterostructured InAs/InAsN and InAsN/InP nanowires were grown in the core/shell geometry. In the low-temperature photoluminescence spectra of the grown structures, spectral features are observed that correspond to the polytypic structure of nanowires with a predominance of the wurtzite phase and parasitic islands of the sphalerite phase. It was shown that the interband photoluminescence spectral features of InAsN nanowires experience a red shift relative to the pristine InAs nanowires. The incorporation of nitrogen reduces the bandgap by splitting the conduction band into two subbands. The position of the spectral features in the photoluminescence spectra confirms the formation of a nitride solid solution with a polytypic hexagonal structure, having a concentration of nitrogen atoms of up to 0.7%. Additional passivation of the nanowire surface with InP leads to a decrease in the intensity of nonradiative recombination and an improvement in the photoluminescent response of the nanowires, which makes it possible to detect photoluminescence emission at room temperature. Thus, by changing the composition and morphology of nanowires, it is possible to control their electronic structure, which allows varying the operating range of detectors and mid-IR radiation sources based on them.