Recently, self-powered ultraviolet photodetectors (UV PDs) based on SnO₂ have gained increasing interest due to its feature of working continuously without the need for external power sources. Nevertheless, the production of the majority of these existing UV PDs necessitates additional manufacturing stages or intricate processes. In this work, we present a facile, cost-effective approach for the fabrication of a self-powered UV PD based on p-Si/n-SnO₂ junction. The self-powered device was achieved simply by integrating a p-Si substrate with a n-type SnO₂ microbelt, which was synthesized via the chemical vapor deposition (CVD) method. The high-quality feature, coupled with the belt-like shape of the SnO₂ microbelt enables the favorable contact between the n-type SnO₂ and p-type silicon. The built-in electric field created at the interface endows the self-powered performance of the device. The p-Si/n-SnO₂ junction photodetector demonstrated a high responsivity (0.12 mA/W), high light/dark current ratio (>10³), and rapid response speed at zero bias. This method offers a practical way to develop cost-effective and high-performance self-powered UV PDs.

The transition of cobalt ions located at tetrahedral sites will produce strong absorption in the visible and near-infrared regions, and is expected to work in a passively Q-switched solid-state laser at the eye-safe wavelength of 1.5 µm. In this study, Co²⁺ ions were introduced into the wide bandgap semiconductor material ZnGa₂O₄, and large-sized and high-quality Co²⁺-doped ZnGa₂O₄ crystals with a volume of about 20 cm³ were grown using the vertical gradient freeze(VGF) method. Crystal structure and optical properties were analyzed using X-ray powder diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and absorption spectroscopy. XRD results show that the Co²⁺-doped ZnGa₂O₄ crystal has a pure spinel phase without impurity phases and the rocking curve full width at half maximum (FWHM) is only 58 arcsec. The concentration of Co²⁺ in Co²⁺-doped ZnGa₂O₄ crystals was determined to be 0.2 at.% by the energy dispersive X-ray spectroscopy. The optical band gap of Co²⁺-doped ZnGa₂O₄ crystals is 4.44 eV. The optical absorption spectrum for Co²⁺-doped ZnGa₂O₄ reveals a prominent visible absorption band within 550−670 nm and a wide absorption band spanning from 1100 to 1700 nm. This suggests that the Co²⁺ ions have substituted the Zn²⁺ ions, which are typically tetrahedrally coordinated, within the lattice structure of ZnGa₂O₄. The visible region's absorption peak and the near-infrared broad absorption band are ascribed to the ⁴A₂(⁴F) → ⁴T₁(⁴P) and ⁴A₂(⁴F) → ⁴T₁(⁴F) transitions, respectively. The optimal ground state absorption cross section was determined to be 3.07 × 10⁻¹⁹ cm² in ZnGa₂O₄, a value that is comparatively large within the context of similar materials. This finding suggests that ZnGa₂O₄ is a promising candidate for use in near-infrared passive Q-switched solid-state lasers.

Two-dimensional (2D) chiral halide perovskites (CHPs) have attracted broad interest due to their distinct spin-dependent properties and promising applications in chiroptics and spintronics. Here, we report a new type of 2D CHP single crystals, namely R/S-3BrMBA₂PbBr₄. The chirality of the as-prepared samples is confirmed by exploiting circular dichroism spectroscopy, indicating a successful chirality transfer from chiral organic cations to their inorganic perovskite sublattices. Furthermore, we observed bright photoluminescence spanning from 380 to 750 nm in R/S-3BrMBA₂PbBr₄ crystals at room temperature. Such broad photoluminescence originates from free excitons and self-trapped excitons. In addition, efficient second-harmonic generation (SHG) performance was observed in chiral perovskite single crystals with high circular polarization ratios and non-linear optical circular dichroism. This demonstrates that R/S-3BrMBA₂PbBr₄ crystals can be used to detect and generate left- and right-handed circularly polarized light. Our study provides a new platform to develop high-performance chiroptical and spintronic devices.

Traditional p-type colloidal quantum dot (CQD) hole transport layers (HTLs) used in CQD solar cells (CQDSCs) are commonly based on organic ligands exchange and the layer-by-layer (LbL) technique. Nonetheless, the ligand detachment and complex fabrication process introduce surface defects, compromising device stability and efficiency. In this work, we propose a solution-phase ligand exchange (SPLE) method utilizing inorganic ligands to develop stable p-type lead sulfide (PbS) CQD inks for the first time. Various amounts of tin (II) iodide (SnI₂) were mixed with lead halide (PbX₂; X = I, Br) in the ligand solution. By precisely controlling the SnI₂ concentration, we regulate the transition of PbS QDs from n-type to p-type. PbS CQDSCs were fabricated using two different HTL approaches: one with 1,2-ethanedithiol (EDT)-passivated QDs via the LbL method (control) and another with inorganic ligand-passivated QD ink (target). The target devices achieved a higher power conversion efficiency (PCE) of 10.93%, compared to 9.83% for the control devices. This improvement is attributed to reduced interfacial defects and enhanced carrier mobility. The proposed technique offers an efficient pathway for producing stable p-type PbS CQD inks using inorganic ligands, paving the way for high-performance and flexible CQD-based optoelectronic devices.

Halide perovskites have attracted great interest as active layers in optoelectronic devices. Among perovskites with diverse compositions, α-FAPbI₃ is of utmost importance with great optoelectronic properties and a decent bandgap of 1.48 eV. However, the α-phase suffers an irreversible transition to the photo-inactive δ-phase, whereas the δ-phase is usually regarded as useless phase with poor optoelectronic properties. Therefore, it is commonly accepted that the thermodynamic stable δ-FAPbI₃ greatly limits the application of FAPbI₃. Every coin has two sides, although the δ-phase is difficult to apply as photoelectrical active layers, it is possible to combine δ-FAPbI₃ with α-FAPbI₃ to realize functional applications. Firstly, this review analyzes the cause of the contrasting properties between α- and δ-FAPbI₃, where the stronger electron−phonon coupling in 1D hexagonal δ-FAPbI₃ restricts its internal carrier and phonon transport. Secondly, the factors affecting the phase transitions and strategies to control phase transition between α- and δ-FAPbI₃ are presented. Finally, some functional applications of δ-FAPbI₃ in combination with α-FAPbI₃ are given according to previous reports. By and large, we hope to introduce δ-FAPbI₃ from another perspective and give some insights into its unique properties, hopefully providing new strategies for the subsequent advances to FAPbI₃.

The (010)-oriented substrates of β-Ga₂O₃ are endowed with the maximum thermal conductivity and fastest homoepitaxial rate, which is the preferred substrate direction for high-power devices. However, the size of (010) plane wafer is critically limited by die in the commercial edge-defined film-fed growth (EFG) method. It is difficult to grow the β-Ga₂O₃ crystal with (010) principal face due to the (100) and (001) are cleavage planes. Here, the 2-inch diameter (010) principal-face β-Ga₂O₃ single crystal is successfully designed and grown by improved EFG method. Unlike previous reported techniques, the single crystals are pulled with [001] direction, and in this way the (010) wafers can be obtained from the principal face. In our experiments, tree-like defects (TLDs) in (010) principal-face bulk crystals are easy to generate. The relationship between stability of growth interface and origin of TLDs are thoroughly discussed. The TLDs are successfully eliminated by optimizing growth conditions. The high crystalline quality of (010)-oriented substrates are comprehensive demonstrated by full width at half maximum (FWHM) with 50.4 arcsec, consistent orientation arrangement of (010) plane, respectively. This work shows that the (010)-oriented substrates can be obtained by EFG method, predicting the commercial prospects of large-scale (010)-oriented β-Ga₂O₃ substrates.

In order to address challenges posed by the reduction in transistor size, researchers are concentrating on two-dimensional (2D) materials with high dielectric constants and large band gaps. Monoclinic ZrO₂ (m-ZrO₂) has emerged as a promising gate dielectric material due to its suitable dielectric constant, wide band gap, ideal valence-band offset, and good thermodynamic stability. However, current deposition methods face compatibility issues with 2D semiconductors, highlighting the need for high-quality dielectrics and interfaces. Here, high-quality 2D m-ZrO₂ single crystals are successfully prepared using a one-step chemical vapor deposition (CVD) method, aided by 5A molecular sieves for oxygen supply. The prepared ZrO₂ is utilized as a gate dielectric in the construction of MoS₂ field-effect transistors (FETs) to investigate its electrical property. The FETs exhibit a high carrier mobility of up to 5.50 cm²·V⁻¹·s⁻¹, and a current switching ratio (I_on/off) of approximately 10⁴, which aligns with the current standards of logic circuits, indicating that ZrO₂ has application value as a gate dielectric. The successful one-step preparation of single-crystal ZrO₂ paves the way for the utilization of high-κ gate dielectrics and creates favorable conditions for the development of high-performance semiconductor devices, offering new possibilities for transistor miniaturization.

In this work, we studied the persistent photoconductivity (PPC) spectra in single HgTe/CdHgTe quantum wells with different growth parameters and different types of dark conductivity. The studies were performed in a wide radiation quantum energy range of 0.62–3.1 eV both at T = 4.2 K and at T = 77 K. Common features of the PPC spectra for all structures were revealed, and their relation to the presence of a CdTe cap layer in all structures and the appropriate cadmium fraction in the CdHgTe barrier layers was shown. One of the features was associated with the presence of a deep level in the CdTe layer. In addition, the oscillatory behavior of the PPC spectra in the region from 0.8–1.1 eV to 1.2–1.5 eV was observed. It is associated with the cascade emission of longitudinal optical phonons in CdHgTe barrier.

The RADFET radiation dosimeter is a type of radiation detector based on the total dose effects of the PMOS transistor. The RADFET chip was fabricated in CUMEC 8-inch process with a six-layer photomask. The chip including two identical PMOS transistors, occupies a size of 610 µm×610 µm. Each PMOS has a W/L ratio of 300 µm/50 µm, and a 400 nm thick gate oxide, which is formed by a dry-wet-dry oxygen process. The wet oxygen-formed gate oxide with more traps can capture more holes during irradiation, thus significantly changing the PMOS threshold voltage. Pre-irradiation measurement results from ten test chips show that the initial average voltage of the PMOS is 1.961 V with a dispersion of 5.7%. The irradiation experiment is conducted in a cobalt source facility with a dose rate of 50 rad(Si)/s. During irradiation, a constant current source circuit of 10 µA was connected to monitoring the shift in threshold voltage under different total dose. When the total dose is 100 krad(Si), the shift in threshold voltage was approximately 1.37 V, which demonstrates that an excellent radiation function was achieved.

Integrated perovskite-organic solar cells (IPOSCs) offer a promising hybrid approach that combines the advantages of perovskite and organic solar cells, enabling efficient photon absorption across a broad spectrum with a simplified architecture. However, challenges such as limited charge mobility in organic bulk heterojunction (BHJ) layers, and energy-level mismatch at the perovskite/BHJ interface still sustain. Recent advancements in non-fullerene acceptors (NFAs), interfacial engineering, and emerging materials have improved charge transfer/transport, and overall power conversion efficiency (PCE) of IPOSCs. This review explores key developments in IPOSCs, focusing on low-bandgap materials for near-infrared absorption, energy alignment optimization, and strategies to enhance photocurrent density and device performance. Future innovations in material selection and device architecture will be crucial for further improving the efficiency of IPOSCs, bringing them closer to practical application in next-generation photovoltaic technologies.

Lead chalcohalides (PbYX, X = Cl, Br, I; Y = S, Se) is an extension of the classic Pb chalcogenides (PbY). Constructing the heterogeneous integration with PbYX and PbY material systems makes it possible to achieve significantly improved optoelectronic performance. In this work, we studied the effect of introducing halogen precursors on the structure of classical PbS nanocrystals (NCs) during the synthesis process and realized the preparation of PbS/Pb₃S₂X₂ core/shell structure for the first time. The core/shell structure can effectively improve their optical properties. Furthermore, our approach enables the synthesis of Pb₃S₂Br₂ that had not yet been reported. Our results not only provide valuable insights into the heterogeneous integration of PbYX and PbY materials to elevate material properties but also provide an effective method for further expanding the preparation of PbYX material systems.

In the rapidly evolving field of modern technology, near-infrared (NIR) photodetectors are extremely crucial for efficient and reliable optical communications. The graphene/GaAs Schottky junction photodetector leverages graphene’s exceptional carrier mobility and broadband absorption, coupled with GaAs’s strong absorption in the NIR spectrum, to achieve high responsivity and rapid response times. Here, we present a NIR photodetector employing a graphene/GaAs Schottky junction tailored for communication wavelengths. We fabricated high-performance graphene/GaAs Schottky junction devices with interdigitated electrodes of varying finger widths, systematically investigating their impact on device performance. The experimental results demonstrate that incorporating interdigitated electrodes significantly enhances the collection efficiency of photogenerated carriers in graphene/GaAs photodetectors. When illuminated by 808 nm NIR light at an intensity of 7.23 mW/cm², the device achieves an impressive switch ratio of 10⁷, along with a high responsivity of 40.1 mA/W and a remarkable detectivity of 2.89 × 10¹³ Jones. Additionally, the device is characterized by rapid response times, with rise and fall times of 18.5 and 17.5 μs, respectively, at a 3 dB bandwidth. These findings underscore the significant potential of high-performance graphene/GaAs photodetectors for applications in NIR optoelectronic systems.

High-performance flexible pressure sensors have garnered significant attention in fields such as wearable electronics and human-machine interfaces. However, the development of flexible pressure sensors that simultaneously achieve high sensitivity, a wide detection range, and good mechanical stability remains a challenge. In this paper, we propose a flexible piezoresistive pressure sensor based on a Ti₃C₂Tx (MXene)/polyethylene oxide (PEO) composite nanofiber membrane (CNM). The sensor, utilizing MXene (0.4 wt%)/PEO (5 wt%), exhibits high sensitivity (44.34 kPa⁻¹ at 0−50 kPa, 12.99 kPa⁻¹ at 50−500 kPa) and can reliably monitor physiological signals and other subtle cues. Moreover, the sensor features a wide detection range (0−500 kPa), fast response and recovery time (~150/45 ms), and excellent mechanical stability (over 10 000 pressure cycles at maximum load). Through an MXene/PEO sensor array, we demonstrate its applications in human physiological signal monitoring, providing a reliable way to expand the application of MXene-based flexible pressure sensors.

The quantum confinement effect fundamentally alters the optical and electronic properties of quantum dots (QDs), making them versatile building blocks for next-generation light-emitting diodes (LEDs). This study investigates how quantum confinement governs the charge transport, exciton dynamics, and emission efficiency in QD-LEDs, using CsPbI₃ QDs as a model system. By systematically varying QD sizes, we reveal size-dependent trade-offs in LED performance, such as enhanced efficiency for smaller QDs but increased brightness and stability for larger QDs under high current densities. Our findings offer critical insights into the design of high-performance QD-LEDs, paving the way for scalable and energy-efficient optoelectronic devices.

Due to advantages of high power-conversion efficiency (PCE), large power-to-weight ratio (PWR), low cost and solution processibility, flexible perovskite solar cells (f-PSCs) have attracted extensive attention in recent years. The PCE of f-PSCs has developed rapidly to over 25%, showing great application prospects in aerospace and wearable electronic devices. This review systematically sorts device structures and compositions of f-PSCs, summarizes various methods to improve its efficiency and stability recent years. In addition, the applications and potentials of f-PSCs in space vehicle and aircraft was discussed. At last, we prospect the key scientific and technological issues that need to be addressed for f-PSCs at current stage.

Perovskite materials have emerged as promising candidates for various optoelectronic applications owing to their remarkable optoelectronic properties and easy solution processing. Metal halide perovskites, as direct-bandgap semiconductors, show an excellent class of optical gain media, which makes them applicable to the development of low-threshold or even thresholdless lasers. This mini review explores recent advances in perovskite-based laser technology, which have led to chiral single-mode microlasers, low-threshold, external-cavity-free lasing devices at room temperature, and other innovative device architectures. Including self-assembled CsPbBr₃ microwires that enable edge lasing. Realized continuous-wave (CW) pumped lasing by perovskite material pushes the research of electrically driven perovskite lasers. The capacity to regulate charge transport in halide perovskites further enhances their applicability in optoelectronic systems. The ongoing integration of perovskite materials with advanced photonic structures holds excellent potential for future innovations in laser technology and photovoltaics. We also highlight the transformative potential of perovskite materials in advancing the next generation of efficient and integrated optoelectronic devices.

Computing-in-memory (CIM) has been a promising candidate for artificial-intelligent applications thanks to the absence of data transfer between computation and storage blocks. Resistive random access memory (RRAM) based CIM has the advantage of high computing density, non-volatility as well as high energy efficiency. However, previous CIM research has predominantly focused on realizing high energy efficiency and high area efficiency for inference, while little attention has been devoted to addressing the challenges of on-chip programming speed, power consumption, and accuracy. In this paper, a fabricated 28 nm 576K RRAM-based CIM macro featuring optimized on-chip programming schemes is proposed to address the issues mentioned above. Different strategies of mapping weights to RRAM arrays are compared, and a novel direct-current ADC design is designed for both programming and inference stages. Utilizing the optimized hybrid programming scheme, 4.67× programming speed, 0.15× power saving and 4.31× compact weight distribution are realized. Besides, this macro achieves a normalized area efficiency of 2.82 TOPS/mm² and a normalized energy efficiency of 35.6 TOPS/W.

As traditional von Neumann architectures face limitations in handling the demands of big data and complex computational tasks, neuromorphic computing has emerged as a promising alternative, inspired by the human brain's neural networks. Volatile memristors, particularly Mott and diffusive memristors, have garnered significant attention for their ability to emulate neuronal dynamics, such as spiking and firing patterns, enabling the development of reconfigurable and adaptive computing systems. Recent advancements include the implementation of leaky integrate-and-fire neurons, Hodgkin−Huxley neurons, optoelectronic neurons, and time-surface neurons, all utilizing volatile memristors to achieve efficient, low-power, and highly integrated neuromorphic systems. This paper reviews the latest progress in volatile memristor-based artificial neurons, highlighting their potential for energy-efficient computing and integration with artificial synapses. We conclude by addressing challenges such as improving memristor reliability and exploring new architectures to advance memristor-based neuromorphic computing.

The novel HfO₂-based ferroelectric field effect transistor (FeFET) is considered a promising candidate for next-generation nonvolatile memory (NVM). However, a series of reliability issues caused by the fatigue effect hinder its further development. Therefore, a comprehensive understanding of the fatigue mechanisms of the device and optimization strategies is essential for its application. The fundamental mechanism of the fatigue effect is attributed to charge trapping and trap generation based on the current studies, and the underlying causes, occurrence locations and specific impacts are analyzed in this review. In particular, the asymmetric trapping/detrapping of electrons and holes, as well as the relationship between the ferroelectric (FE) polarization and charge trapping, are given particular attention. After categorizing and summarizing the current progress, we propose a series of optimization strategies derived based on the fatigue mechanisms.

Complementary inverter is the basic unit for logic circuits, but the inverters based on full oxide thin-film transistors (TFTs) are still very limited. The next challenge is to realize complementary inverters using homogeneous oxide semiconductors. Herein, we propose the design of complementary inverter based on full ZnO TFTs. Li−N dual-doped ZnO (ZnO:(Li,N)) acts as the p-type channel and Al-doped ZnO (ZnO:Al) serves as the n-type channel for fabrication of TFTs, and then the complementary inverter is produced with p- and n-type ZnO TFTs. The homogeneous ZnO-based complementary inverter has typical voltage transfer characteristics with the voltage gain of 13.34 at the supply voltage of 40 V. This work may open the door for the development of oxide complementary inverters for logic circuits.

As a type of charge-balanced power device, the performance of super-junction MOSFETs (SJ-MOS) is significantly influenced by fluctuations in the fabrication process. To overcome the relatively narrow process window of conventional SJ-MOS, an optimized structure "vertical variable doping super-junction MOSFET (VVD-SJ)" is proposed. Based on the analysis using the charge superposition principle, it is observed that the VVD-SJ, in which the impurity concentration of the P-pillar gradually decreases while that of the N-pillar increases from top to bottom, improves the electric field distribution and mitigates charge imbalance (CIB). Experimental results demonstrate that the optimized 600 V VVD-SJ achieves a 35.90% expansion of the process window.

In the implementation of quantum key distribution, Security certification is a prerequisite for social deployment. Transmitters in decoy-BB84 systems typically employ gain-switched semiconductor lasers (GSSLs) to generate optical pulses for encoding quantum information. However, the working state of the laser may violate the assumption of pulse independence. Here, we explored the dependence of intensity fluctuation and high-order correlation distribution of optical pulses on driving currents at 2.5 GHz. We found the intensity correlation distribution had a significant dependence on the driving currents, which would affect the final key rate. By utilizing rate equations in our simulation, we confirmed the fluctuation and correlation originated from the instability of gain-switched laser driven at a GHz-repetitive frequency. Finally, we evaluated the impact of intensity fluctuation on the secure key rate. This work will provide valuable insights for assessing whether the transmitter is operating at optimal state in practice.

Infrared and terahertz waves constitute pivotal bands within the electromagnetic spectrum, distinguished by their robust penetration capabilities and non-ionizing nature. These wavebands offer the potential for achieving high-resolution and non-destructive detection methodologies, thereby possessing considerable research significance across diverse domains including communication technologies, biomedical applications, and security screening systems. Two-dimensional materials, owing to their distinctive optoelectronic attributes, have found widespread application in photodetection endeavors. Nonetheless, their efficacy diminishes when tasked with detecting lower photon energies. Furthermore, as the landscape of device integration evolves, two-dimensional materials struggle to align with the stringent demands for device superior performance. Topological materials, with their topologically protected electronic states and non-trivial topological invariants, exhibit quantum anomalous Hall effects and ultra-high carrier mobility, providing a new approach for seeking photosensitive materials for infrared and terahertz photodetectors. This article introduces various types of topological materials and their properties, followed by an explanation of the detection mechanism and performance parameters of photodetectors. Finally, it summarizes the current research status of near-infrared to far-infrared photodetectors and terahertz photodetectors based on topological materials, discussing the challenges faced and future prospects in their development.

In order to solve the problems of low overload power in MEMS cantilever beams and low sensitivity in traditional MEMS fixed beams, a novel MEMS microwave power detection chip based on the dual-guided fixed beam is designed. A gap between guiding beams and measuring electrodes is designed to accelerate the release of the sacrificial layer, effectively enhancing chip performance. A load sensing model for the MEMS fixed beam microwave power detection chip is proposed, and the mechanical characteristics are analyzed based on the uniform load applied. The overload power and sensitivity are investigated using the load sensing model, and experimental results are compared with theoretical results. The detection chip exhibits excellent microwave characteristic in the 9−11 GHz frequency band, with a return loss less than −10 dB. At a signal frequency of 10 GHz, the theoretical sensitivity is 13.8 fF/W, closely matching the measured value of 14.3 fF/W, with a relative error of only 3.5%. These results demonstrate that the proposed load sensing model provides significant theoretical support for the design and performance optimization of MEMS microwave power detection chips.

Owing to their low toxicity and remarkable stability, perovskites based on antimony and bismuth have garnered significant interest in recent years. However, A₃B₂X₉ perovskite materials derived from antimony and bismuth face several challenges, including excessively wide band gaps, elevated defect densities, and suboptimal film quality, all of which hinder advancements in device efficiency. While extensive studies have been undertaken to investigate the effects of modulating the A-site and X-site elements in lead-free A₃B₂X₉ perovskites, there remains a notable scarcity of reports addressing the impact of modifications to the B-site element. In this study, we investigated the alloying of antimony and bismuth within the 2D Cs₃B₂I₆Br₃ perovskite. By systematically varying the ratios of two elements, we found that the incorporation of both antimony and bismuth at the B-site significantly enhances the quality of the perovskite films. Our findings indicate that a 1 : 1 ratio of antimony to bismuth produces the densest films, the highest photoluminescence intensity, and superior photovoltaic performance. Ultimately, the devices fabricated using this optimal ratio achieved an open-circuit voltage (V_OC) of 1.01 V and a power conversion efficiency (PCE) of 0.645%.

All-perovskite tandem solar cells (ATSCs) have the potential to surpass the Shockley−Queisser efficiency limit of conventional single-junction devices. However, the performance and stability of mixed tin–lead (Sn–Pb) perovskite solar cells (PSCs), which are crucial components of ATSCs, are much lower than those of lead-based perovskites. The primary challenges include the high crystallization rate of perovskite materials and the susceptibility of Sn²⁺ oxidation, which leads to rough morphology and unfavorable p-type self-doping. To address these issues, we introduced ethylhydrazine oxalate (EDO) at the perovskite interface, which effectively inhibits the oxidation of Sn²⁺ and simultaneously enhances the crystallinity of the perovskite. Consequently, the EDO-modified mixed tin−lead PSCs reached a power conversion efficiency (PCE) of 21.96% with high reproducibility. We further achieved a 27.58% efficient ATSCs by using EDO as interfacial passivator in the Sn−Pb PSCs.

Semiconductor colloidal quantum wells (CQWs) with atomic-precision layer thickness are rapidly gaining attention for next-generation optoelectronic applications due to their tunable optical and electronic properties. In this study, we investigate the dielectric and optical characteristics of CdSe CQWs with monolayer numbers ranging from 2 to 7, synthesized via thermal injection and atomic layer (c-ALD) deposition techniques. Through a combination of spectroscopic ellipsometry (SE) and first-principles calculations, we demonstrate the significant tunability of the bandgap, refractive index, and extinction coefficient, driven by quantum confinement effects. Our results show a decrease in bandgap from 3.1 to 2.0 eV as the layer thickness increases. Furthermore, by employing a detailed analysis of the absorption spectra, accounting for exciton localization and asymmetric broadening, we precisely capture the relationship between monolayer number and exciton binding energy. These findings offer crucial insights for optimizing CdSe CQWs in optoelectronic device design by leveraging their layer-dependent properties.

Colloidal quantum dots (CQDs) are highly regarded for their outstanding photovoltaic characteristics, including excellent color purity, stability, high photoluminescence quantum yield (PLQY), narrow emission spectra, and ease of solution processing. Despite significant progress in quantum dot light-emitting diodes (QLEDs) technology since its inception in 1994, blue QLEDs still fall short in efficiency and lifespan compared to red and green versions. The toxicity concerns associated with Cd/Pb-based quantum dots (QDs) have spurred the development of heavy-metal-free alternatives, such as group Ⅱ−Ⅵ (e.g., ZnSe-based QDs), group Ⅲ−Ⅴ (e.g., InP, GaN QDs), and carbon dots (CDs). In this review, we discuss the key properties and development history of quantum dots (QDs), various synthesis approaches, the role of surface ligands, and important considerations in developing core/shell (C/S) structured QDs. Additionally, we provide an outlook on the challenges and future directions for blue QLEDs.

In recent years, as the dimensions of the conventional semiconductor technology is approaching the physical limits, while the multifunction circuits are restricted by the relatively fixed characteristics of the traditional metal−oxide−semiconductor field-effect transistors, reconfigurable devices that can realize reconfigurable characteristics and multiple functions at device level have been seen as a promising method to improve integration density and reduce power consumption. Owing to the ultrathin structure, effective control of the electronic characteristics and ability to modulate structural defects, two-dimensional (2D) materials have been widely used to fabricate reconfigurable devices. In this review, we summarize the working principles and related logic applications of reconfigurable devices based on 2D materials, including generating tunable anti-ambipolar responses and demonstrating nonvolatile operations. Furthermore, we discuss the analog signal processing applications of anti-ambipolar transistors and the artificial intelligence hardware implementations based on reconfigurable transistors and memristors, respectively, therefore highlighting the outstanding advantages of reconfigurable devices in footprint, energy consumption and performance. Finally, we discuss the challenges of the 2D materials-based reconfigurable devices.

Perovskite solar cells (PSCs) have become a hot topic in the field of renewable energy due to their excellent power conversion efficiency and potential for low-cost manufacturing. The hole transport layer (HTL), as a key component of PSCs, plays a crucial role in the cell's overall performance. Magnetron sputtering NiO_x has attracted widespread attention due to its high carrier mobility, excellent stability, and suitability for large-scale production. Herein, an insightful summary of the recent progress of magnetron sputtering NiO_x as the HTL of PSCs is presented to promote its further development. This review summarized the basic properties of magnetron sputtering NiO_x thin film, the key parameters affecting the optoelectronic properties of NiO_x thin films during the magnetron-sputtering process, and the performance of the corresponding PSCs. Special attention was paid to the interfacial issues between NiO_x and perovskites, and the modification strategies were systematically summarized. Finally, the challenges of sputtering NiO_x technology and the possible development opportunities were concluded and discussed.

High-performance perovskite photodetectors with self-driven characteristic usually need electron/hole transport layers to extract carriers. However, these devices with transport layer structure are prone to result in a poor perovskite/transport layer interface, which restricts the performance and stability of the device. To solve this problem, this work reports a novel device structure in which perovskite nanowires are in-situ prepared on PbI₂, which serves as both a reaction raw material and efficient carrier extraction layer. By optimizing the thickness of PbI₂, nanowire growth time, and ion exchange time, a self-driven photodetector with an ITO/PbI₂/CsPbBr₃/carbon structure is constructed. The optimized device achieves excellent performance with the responsivity of 0.33 A/W, the detectivity of as high as 3.52 × 10¹³ Jones. Furthermore, the device can detect the light with its optical power lowered to 0.1 nW/cm². This research provides a new method for preparing perovskite nano/micro devices with simple structure but excellent performance.