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Reducing specific contact resistivity of V/Al/Ti/Au n-electrode on n-AlGaN with Al content over 80% for far-UVC LEDs

Jiale Peng1, 2, Ke Jiang1, 2, , Shanli Zhang1, 2, , Jianwei Ben1, 2, Kexi Liu1, 2, Ziyue Qin1, 2, Ruihua Chen1, 2, Chunyue Zhang1, 2, Shunpeng Lv1, 2, Xiaojuan Sun1, 2 and Dabing Li1, 2

+ Author Affiliations

 Corresponding author: Ke Jiang, jiangke@ciomp.ac.cn; Shanli Zhang, zhangshanli@ciomp.ac.cn

DOI: 10.1088/1674-4926/25010026CSTR: 32376.14.1674-4926.25010026

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Abstract: AlGaN-based LEDs with peak wavelength below 240 nm (far-UVC) pose no significant harm to human health, thus highlighting their broader application potential. While, there is a significant Schottky barrier between the n-electrode and Al-rich n-AlGaN, adversely impeding electron injection and resulting in considerable heat generation. Here, we fabricate V-based electrodes of V/Al/Ti/Au on n-AlGaN with Al content over 80% and investigate the relationship between the metal diffusion and contact properties during the high-temperature annealing process. Experiments reveal that decreasing V thickness in the electrode promotes the diffusion of Al towards the surface of n-AlGaN, which facilitates the formation of VN and thus the increase of local electron concentration, resulting in lower specific contact resistivity. Then, increasing the Al thickness inhibits the diffusion of Au to the n-AlGaN surface, suppressing the rise of Schottky barrier. Experimentally, an optimized n-electrode of V(10 nm)/Al(240 nm)/Ti(40 nm)/Au(50 nm) on n-Al0.81Ga0.19N is obtained, realizing an optimal specific contact resistivity of 7.30 × 10−4 Ω·cm2. Based on the optimal n-electrode preparation scheme for Al-rich n-AlGaN, the work voltage of a far-UVC LED with peak wavelength of 233.5 nm is effectively reduced.

Key words: Al-rich n-AlGaN, specific contact resistivity, far-UVC LED



[1]
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[2]
Rauch K D, MacIsaac S A, Reid B, et al. A critical review of ultra-violet light emitting diodes as a one water disinfection technology. Water Res X, 2024, 25, 100271
[3]
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[4]
Wang C X, Song X F, Shen J Y, et al. Recent advances in DNA-based nanoprobes for in vivo MiRNA imaging. Chemistry, 2024, 30(66), e202402566
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[6]
Zwicker P, Schleusener J, Lohan S B, et al. Application of 233 nm far-UVC LEDs for eradication of MRSA and MSSA and risk assessment on skin models. Sci Rep, 2022, 12, 2587
[7]
Fukui T, Niikura T, Oda T, et al. Safety of 222 nm UVC irradiation to the surgical site in a rabbit model. Photochem Photobiol, 2022, 98(6), 1365
[8]
Buonanno M, Ponnaiya B, Welch D, et al. Germicidal efficacy and mammalian skin safety of 222-nm UV light. Radiat Res, 2017, 187(4), 483
[9]
Li J C, Gao N, Cai D J, et al. Multiple fields manipulation on nitride material structures in ultraviolet light-emitting diodes. Light Sci Appl, 2021, 10, 129
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[12]
Pandey A, Gim J, Hovden R, et al. Electron overflow of AlGaN deep ultraviolet light emitting diodes. Appl Phys Lett, 2021, 118(24), 241109
[13]
Mehnke F, Kuhn C, Guttmann M, et al. Efficient charge carrier injection into sub-250 nm AlGaN multiple quantum well light emitting diodes. Appl Phys Lett, 2014, 105(5), 051113 doi: 10.1063/1.4892883
[14]
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[16]
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[17]
Jiang K, Sun X J, Shi Z M, et al. Quantum engineering of non-equilibrium efficient p-doping in ultra-wide band-gap nitrides. Light Sci Appl, 2021, 10(1), 69
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Zhang C Y, Jiang K, Sun X J, et al. Recent progress on AlGaN based deep ultraviolet light-emitting diodes below 250 nm. Crystals, 2022, 12(12), 1812
[19]
Mehnke F, Sulmoni L, Guttmann M, et al. Influence of light absorption on the performance characteristics of UV LEDs with emission between 239 and 217 nm. Appl Phys Express, 2019, 12(1), 012008
[20]
France R, Xu T, Chen P P, et al. Vanadium-based Ohmic contacts to n-AlGaN in the entire alloy composition. Appl Phys Lett, 2007, 90(6), 062115
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[26]
Kataoka K, Narita T, Yagi Y, et al. Comprehensive study of electron conduction and its compensation for degenerate Si-doped AlN-rich AlGaN. Physica Rapid Research Ltrs, 2024, 18(2), 2300055
[27]
Mehnke F, Wernicke T, Pingel H, et al. Highly conductive n-Al xGa1– xN layers with aluminum mole fractions above 80%. Appl Phys Lett, 2013, 103(21), 212109
[28]
Collazo R, Mita S, Xie J Q, et al. Progress on n-type doping of AlGaN alloys on AlN single crystal substrates for UV optoelectronic applications. Phys Status Solidi C, 2011, 8(7/8), 2031
[29]
Moses P G, Miao M S, Yan Q M, et al. Hybrid functional investigations of band gaps and band alignments for AlN, GaN, InN, and InGaN. J Chem Phys, 2011, 134(8), 084703 doi: 10.1063/1.3548872
[30]
Yang Y, Xiong F B, Lin H Y, et al. Evaluation of Ti/Al/Ni/Au ohmic contact to n-AlGaN with different Ti/Al thickness for deep ultraviolet light emitting diode. Solid State Electron, 2023, 208, 108752 doi: 10.1016/j.sse.2023.108752
[31]
Zhao X Y, Sun K, Lv Z X, et al. Contact engineering of III-nitrides and metal schemes toward efficient deep-ultraviolet light-emitting diodes. ACS Appl Mater Interfaces, 2024, 16(5), 6605 doi: 10.1021/acsami.3c15303
[32]
Wang L, Mohammed F M, Adesida I. Differences in the reaction kinetics and contact formation mechanisms of annealed Ti∕Al∕Mo∕Au Ohmic contacts on n-GaN and AlGaN∕GaN epilayers. J Appl Phys, 2007, 101(1), 013702 doi: 10.1063/1.2402791
[33]
Van Daele B, Van Tendeloo G, Ruythooren W, et al. The role of Al on Ohmic contact formation on n-type GaN and AlGaN∕GaN. Appl Phys Lett, 2005, 87(6), 061905 doi: 10.1063/1.2008361
[34]
Miller M A, Koo B H, Bogart K H A, et al. Ti/Al/Ti/Au and V/Al/V/Au contacts to plasma-etched n-Al0.58Ga0.42N. J Electron Mater, 2008, 37(5), 564 doi: 10.1007/s11664-007-0300-8
[35]
Wang L, Mohammed F M, Adesida I. Formation mechanism of ohmic contacts on AlGaN∕GaN heterostructure: Electrical and microstructural characterizations. J Appl Phys, 2008, 103(9), 093516 doi: 10.1063/1.2903482
[36]
Ebata K, Hiroki M, Tateno K, et al. Effects of thermal annealing on V-based ohmic contacts on n-type AlGaN with high Al content. Phys Status Solidi A, 2024, 221(21), 2400148 doi: 10.1002/pssa.202400148
[37]
Guo X Q, Xu F J, Lang J, et al. Influence of the barrier layer on the electrical properties of the V/Al-based Ohmic contact on n-type high-Al-fraction AlGaN. Appl Phys Lett, 2024, 124(23), 232106 doi: 10.1063/5.0208669
[38]
Sulmoni L, Mehnke F, Mogilatenko A, et al. Electrical properties and microstructure formation of V/Al-based n-contacts on high Al mole fraction n-AlGaN layers. Photon Res, 2020, 8(8), 1381 doi: 10.1364/PRJ.391075
[39]
Cho H K, Rass J, Mogilatenko A, et al. Impact of plasma treatment of n-Al0.87Ga0.13N: Si surfaces on V/Al/Ni/Au contacts in far-UVC LEDs. IEEE Photonics Technol Lett, 2023, 35(17), 915 doi: 10.1109/LPT.2023.3288216
[40]
Srivastava S, Hwang S M, Islam M, et al. Ohmic contact to high-aluminum-content AlGaN epilayers. J Electron Mater, 2009, 38(11), 2348 doi: 10.1007/s11664-009-0924-y
[41]
Jung S M, Lee C T, Shin M W. Investigation of V-Ti/Al/Ni/Au Ohmic contact to AlGaN/GaN heterostructures with a thin GaN cap layer. Semicond Sci Technol, 2015, 30(7), 075012
[42]
Schmid A, Schroeter C, Otto R, et al. Microstructure of V-based ohmic contacts to AlGaN/GaN heterostructures at a reduced annealing temperature. Appl Phys Lett, 2015, 106(5), 053509
Fig. 1.  (Color online) (a) and (b) are the epitaxial structures of the n-AlGaN and the far-UVC LED wafers. (c) Schematic diagram of the n-electrode for the CTLM.

DownLoad: Full-Size Img PowerPoint
Fig. 2.  (Color online) (a) (002) plane XRD 2θ−ω scan curve of the n-AlGaN wafer. (b) (002) and (102) plane XRD rocking curves of the n-AlGaN and AlN epilayers. (c) AFM image with a scale of 5 × 5 μm2 for the n-AlGaN. (d) Optical transmittance spectrum of the n-AlGaN wafer.

DownLoad: Full-Size Img PowerPoint
Fig. 3.  (Color online) (a) Temperature-dependent specific contact resistivity for samples A to E. (b) IV curves of samples A to E at optimized annealing temperature. The electrode spacing is 10 μm.

DownLoad: Full-Size Img PowerPoint
Fig. 4.  (Color online) (a)–(c) represent the HAADF-STEM images and corresponding EDS mappings near the MS interface for electrodes A700, A800, and C850, respectively. Specifically, (1) are HAADF-STEM images with a scale of 450 × 450 nm2. (2) are the enlarged HAADF-STEM images with a scale of 90 × 90 nm2. (3), (4), and (5) are the corresponding EDS mappings for V, Al, and Au elements at the areas shown in (2), respectively.

DownLoad: Full-Size Img PowerPoint
Fig. 5.  (Color online) HAADF images near the contact interface for the electrode E850, with scales of (a) 450 nm × 450 nm and (b) 90 nm × 90 nm, respectively. (c) EDS mapping of Au element at the area shown in (b).

DownLoad: Full-Size Img PowerPoint
Fig. 6.  (Color online) (a) EL spectra and (b) IV and output power curves of the two far-UVC LEDs. The inset in (a) is the optical image of one of the two far-UVC LEDs at working condition.

DownLoad: Full-Size Img PowerPoint

Table 1.   The metal thickness in the n-electrodes for the samples A to E.

SampleMetal thickness (nm)
VAlTiAu
A20804050
B15804050
C10804050
D101604050
E102404050
DownLoad: CSV

Table 2.   Optimal specific contact resistivity and their corresponding annealing temperature.

SampleOptimal annealing
temperature		Specific contact
resistivity
A800 °C1.74 × 10−2 Ω·cm2
B900 °C1.14 × 10−2 Ω·cm2
C850 °C9.98 × 10−3 Ω·cm2
D850 °C2.69 × 10−3 Ω·cm2
E850 °C7.30 × 10−4 Ω·cm2
DownLoad: CSV
[1]
Zollner C J, DenBaars S P, Speck J S, et al. Germicidal ultraviolet LEDs: A review of applications and semiconductor technologies. Semicond Sci Technol, 2021, 36(12), 123001
[2]
Rauch K D, MacIsaac S A, Reid B, et al. A critical review of ultra-violet light emitting diodes as a one water disinfection technology. Water Res X, 2024, 25, 100271
[3]
Zhang L, Fang Z B, Li J X, et al. Research progress on environmental stability of SARS-CoV-2 and influenza viruses. Front Microbiol, 2024, 15, 1463056
[4]
Wang C X, Song X F, Shen J Y, et al. Recent advances in DNA-based nanoprobes for in vivo MiRNA imaging. Chemistry, 2024, 30(66), e202402566
[5]
Urban L, Charles F, de Miranda M R A, et al. Understanding the physiological effects of UV-C light and exploiting its agronomic potential before and after harvest. Plant Physiol Biochem, 2016, 105, 1
[6]
Zwicker P, Schleusener J, Lohan S B, et al. Application of 233 nm far-UVC LEDs for eradication of MRSA and MSSA and risk assessment on skin models. Sci Rep, 2022, 12, 2587
[7]
Fukui T, Niikura T, Oda T, et al. Safety of 222 nm UVC irradiation to the surgical site in a rabbit model. Photochem Photobiol, 2022, 98(6), 1365
[8]
Buonanno M, Ponnaiya B, Welch D, et al. Germicidal efficacy and mammalian skin safety of 222-nm UV light. Radiat Res, 2017, 187(4), 483
[9]
Li J C, Gao N, Cai D J, et al. Multiple fields manipulation on nitride material structures in ultraviolet light-emitting diodes. Light Sci Appl, 2021, 10, 129
[10]
Moe C G, Sugiyama S, Kasai J, et al. AlGaN light-emitting diodes on AlN substrates emitting at 230 nm. Phys Status Solidi A, 2018, 215(10), 1700660
[11]
Cai Q, You H F, Guo H, et al. Progress on AlGaN-based solar-blind ultraviolet photodetectors and focal plane arrays. Light Sci Appl, 2021, 10(1), 94
[12]
Pandey A, Gim J, Hovden R, et al. Electron overflow of AlGaN deep ultraviolet light emitting diodes. Appl Phys Lett, 2021, 118(24), 241109
[13]
Mehnke F, Kuhn C, Guttmann M, et al. Efficient charge carrier injection into sub-250 nm AlGaN multiple quantum well light emitting diodes. Appl Phys Lett, 2014, 105(5), 051113 doi: 10.1063/1.4892883
[14]
Hiroki M, Taniyasu Y, Kumakura K. High-temperature performance of AlN MESFETs with epitaxially grown n-type AlN channel layers. IEEE Electron Device Lett, 2022, 43(3), 350 doi: 10.1109/LED.2022.3141100
[15]
Ebata K, Nishinaka J, Taniyasu Y, et al. High hole concentration in Mg-doped AlN/AlGaN superlattices with high Al content. Jpn J Appl Phys, 2018, 57(4S), 04FH09 doi: 10.7567/JJAP.57.04FH09
[16]
Wang J M, Wang M X, Xu F J, et al. Sub-nanometer ultrathin epitaxy of AlGaN and its application in efficient doping. Light Sci Appl, 2022, 11(1), 71
[17]
Jiang K, Sun X J, Shi Z M, et al. Quantum engineering of non-equilibrium efficient p-doping in ultra-wide band-gap nitrides. Light Sci Appl, 2021, 10(1), 69
[18]
Zhang C Y, Jiang K, Sun X J, et al. Recent progress on AlGaN based deep ultraviolet light-emitting diodes below 250 nm. Crystals, 2022, 12(12), 1812
[19]
Mehnke F, Sulmoni L, Guttmann M, et al. Influence of light absorption on the performance characteristics of UV LEDs with emission between 239 and 217 nm. Appl Phys Express, 2019, 12(1), 012008
[20]
France R, Xu T, Chen P P, et al. Vanadium-based Ohmic contacts to n-AlGaN in the entire alloy composition. Appl Phys Lett, 2007, 90(6), 062115
[21]
Patsalas P, Kalfagiannis N, Kassavetis S, et al. Conductive nitrides: Growth principles, optical and electronic properties, and their perspectives in photonics and plasmonics. Mater Sci Eng R Rep, 2018, 123, 1
[22]
Wu C I, Kahn A. Electronic states at aluminum nitride (0001)-1 × 1 surfaces. Appl Phys Lett, 1999, 74(4), 546
[23]
Kozawa T, Mori T, Ohwaki T, et al. UV photoemission study of AlGaN grown by metalorganic vapor phase epitaxy. Jpn J Appl Phys, 2000, 39(8A), L772
[24]
Grabowski S P, Schneider M, Nienhaus H, et al. Electron affinity of AlxGa1–xN(0001) surfaces. Appl Phys Lett, 2001, 78(17), 2503
[25]
Ye M Y, Hao X R, Zeng J F, et al. Research progress of alkaline earth metal iron-based oxides as anodes for lithium-ion batteries. J Semicond, 2024, 45(2), 021801
[26]
Kataoka K, Narita T, Yagi Y, et al. Comprehensive study of electron conduction and its compensation for degenerate Si-doped AlN-rich AlGaN. Physica Rapid Research Ltrs, 2024, 18(2), 2300055
[27]
Mehnke F, Wernicke T, Pingel H, et al. Highly conductive n-Al xGa1– xN layers with aluminum mole fractions above 80%. Appl Phys Lett, 2013, 103(21), 212109
[28]
Collazo R, Mita S, Xie J Q, et al. Progress on n-type doping of AlGaN alloys on AlN single crystal substrates for UV optoelectronic applications. Phys Status Solidi C, 2011, 8(7/8), 2031
[29]
Moses P G, Miao M S, Yan Q M, et al. Hybrid functional investigations of band gaps and band alignments for AlN, GaN, InN, and InGaN. J Chem Phys, 2011, 134(8), 084703 doi: 10.1063/1.3548872
[30]
Yang Y, Xiong F B, Lin H Y, et al. Evaluation of Ti/Al/Ni/Au ohmic contact to n-AlGaN with different Ti/Al thickness for deep ultraviolet light emitting diode. Solid State Electron, 2023, 208, 108752 doi: 10.1016/j.sse.2023.108752
[31]
Zhao X Y, Sun K, Lv Z X, et al. Contact engineering of III-nitrides and metal schemes toward efficient deep-ultraviolet light-emitting diodes. ACS Appl Mater Interfaces, 2024, 16(5), 6605 doi: 10.1021/acsami.3c15303
[32]
Wang L, Mohammed F M, Adesida I. Differences in the reaction kinetics and contact formation mechanisms of annealed Ti∕Al∕Mo∕Au Ohmic contacts on n-GaN and AlGaN∕GaN epilayers. J Appl Phys, 2007, 101(1), 013702 doi: 10.1063/1.2402791
[33]
Van Daele B, Van Tendeloo G, Ruythooren W, et al. The role of Al on Ohmic contact formation on n-type GaN and AlGaN∕GaN. Appl Phys Lett, 2005, 87(6), 061905 doi: 10.1063/1.2008361
[34]
Miller M A, Koo B H, Bogart K H A, et al. Ti/Al/Ti/Au and V/Al/V/Au contacts to plasma-etched n-Al0.58Ga0.42N. J Electron Mater, 2008, 37(5), 564 doi: 10.1007/s11664-007-0300-8
[35]
Wang L, Mohammed F M, Adesida I. Formation mechanism of ohmic contacts on AlGaN∕GaN heterostructure: Electrical and microstructural characterizations. J Appl Phys, 2008, 103(9), 093516 doi: 10.1063/1.2903482
[36]
Ebata K, Hiroki M, Tateno K, et al. Effects of thermal annealing on V-based ohmic contacts on n-type AlGaN with high Al content. Phys Status Solidi A, 2024, 221(21), 2400148 doi: 10.1002/pssa.202400148
[37]
Guo X Q, Xu F J, Lang J, et al. Influence of the barrier layer on the electrical properties of the V/Al-based Ohmic contact on n-type high-Al-fraction AlGaN. Appl Phys Lett, 2024, 124(23), 232106 doi: 10.1063/5.0208669
[38]
Sulmoni L, Mehnke F, Mogilatenko A, et al. Electrical properties and microstructure formation of V/Al-based n-contacts on high Al mole fraction n-AlGaN layers. Photon Res, 2020, 8(8), 1381 doi: 10.1364/PRJ.391075
[39]
Cho H K, Rass J, Mogilatenko A, et al. Impact of plasma treatment of n-Al0.87Ga0.13N: Si surfaces on V/Al/Ni/Au contacts in far-UVC LEDs. IEEE Photonics Technol Lett, 2023, 35(17), 915 doi: 10.1109/LPT.2023.3288216
[40]
Srivastava S, Hwang S M, Islam M, et al. Ohmic contact to high-aluminum-content AlGaN epilayers. J Electron Mater, 2009, 38(11), 2348 doi: 10.1007/s11664-009-0924-y
[41]
Jung S M, Lee C T, Shin M W. Investigation of V-Ti/Al/Ni/Au Ohmic contact to AlGaN/GaN heterostructures with a thin GaN cap layer. Semicond Sci Technol, 2015, 30(7), 075012
[42]
Schmid A, Schroeter C, Otto R, et al. Microstructure of V-based ohmic contacts to AlGaN/GaN heterostructures at a reduced annealing temperature. Appl Phys Lett, 2015, 106(5), 053509

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    Received: 21 January 2025 Revised: 22 February 2025 Online: Accepted Manuscript: 31 March 2025

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      Article Navigation >  Journal of Semiconductors  > 2025  > Accepted Manuscript
      Jiale Peng, Ke Jiang, Shanli Zhang, Jianwei Ben, Kexi Liu, Ziyue Qin, Ruihua Chen, Chunyue Zhang, Shunpeng Lv, Xiaojuan Sun, Dabing Li. Reducing specific contact resistivity of V/Al/Ti/Au n-electrode on n-AlGaN with Al content over 80% for far-UVC LEDs[J]. Journal of Semiconductors, 2025, In Press. doi: 10.1088/1674-4926/25010026 ****J L Peng, K Jiang, S L Zhang, J W Ben, K X Liu, Z Y Qin, R H Chen, C Y Zhang, S Lv, X J Sun, and D B Li, Reducing specific contact resistivity of V/Al/Ti/Au n-electrode on n-AlGaN with Al content over 80% for far-UVC LEDs[J]. J. Semicond., 2025, accepted doi: 10.1088/1674-4926/25010026
      Citation:
      Jiale Peng, Ke Jiang, Shanli Zhang, Jianwei Ben, Kexi Liu, Ziyue Qin, Ruihua Chen, Chunyue Zhang, Shunpeng Lv, Xiaojuan Sun, Dabing Li. Reducing specific contact resistivity of V/Al/Ti/Au n-electrode on n-AlGaN with Al content over 80% for far-UVC LEDs[J]. Journal of Semiconductors, 2025, In Press. doi: 10.1088/1674-4926/25010026 ****
      J L Peng, K Jiang, S L Zhang, J W Ben, K X Liu, Z Y Qin, R H Chen, C Y Zhang, S Lv, X J Sun, and D B Li, Reducing specific contact resistivity of V/Al/Ti/Au n-electrode on n-AlGaN with Al content over 80% for far-UVC LEDs[J]. J. Semicond., 2025, accepted doi: 10.1088/1674-4926/25010026
      shu

      Reducing specific contact resistivity of V/Al/Ti/Au n-electrode on n-AlGaN with Al content over 80% for far-UVC LEDs

      DOI: 10.1088/1674-4926/25010026
      CSTR: 32376.14.1674-4926.25010026
      • 1.

        State Key Laboratory of Luminescence Science and Technology, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China

      • 2.

        University of Chinese Academy of Sciences, Beijing 100049, China

      More Information
      • Jiale Peng got his bachelor’s degree in 2022 from SouthWest Petroleum University. Now he is a Master student at Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, under the supervision of Prof. Dabing Li and Prof. Ke Jiang. His research focuses on the n-type AlGaN with high Al content for far-UVC LED
      • Ke Jiang received his Bachelor’s degree from Xiamen University in 2014 and doctoral degree from Changchun Institute of Optics, Fine Mechanics and Physics (CIOMP), Chinese Academy of Sciences in 2019. He is currently a Professor with CIOMP, Chinese Academy of Sciences. His research interests include the growth of AlN-based materials and the opto-electronic devices
      • Shanli Zhang received her Bachelor's degree and Master’s degree from Changchun University of Science and Technology in 2007 and 2010, respectively. Now, she is an engineer at Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences. Her research focuses on the MOCVD growth and characterization of AlN-based materials
      • Corresponding author: jiangke@ciomp.ac.cn; zhangshanli@ciomp.ac.cn
      • Received Date: 2025-01-21
      • Revised Date: 2025-02-22
        • Available Online: 2025-03-31

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