Fig. 1.
(Color online) (a) Schematic diagram of the preparation process for In-doped α-Ga₂O₃ nanowire arrays. (b) Illustration of the photoelectrochemical working mechanism of the In-doped α-Ga₂O₃ photoanode.
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Journal of Semiconductors
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2025
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| Citation: |
Junjun Xue, Jiyuan Huang, Kehan Li, Ping Liu, Yan Gu, Ting Zhi, Yan Dong, Jin Wang. Boosting photoelectrochemical performance on α-Ga2O3 nanowire arrays by indium cation doping for self-powered ultraviolet detection[J]. Journal of Semiconductors, 2025, In Press. doi: 10.1088/1674-4926/25020024
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J J Xue, J Y Huang, K H Li, P Liu, Y Gu, T Zhi, Y Dong, and J Wang, Boosting photoelectrochemical performance on α-Ga2O3 nanowire arrays by indium cation doping for self-powered ultraviolet detection[J]. J. Semicond., 2025, accepted doi: 10.1088/1674-4926/25020024
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Boosting photoelectrochemical performance on α-Ga2O3 nanowire arrays by indium cation doping for self-powered ultraviolet detection
DOI: 10.1088/1674-4926/25020024
CSTR: 32376.14.1674-4926.25020024
More Information-
Junjun Xue is currently an associate professor at the College of Electronic and optical engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts and Telecommunications. His current research interests include the growth of compound semiconductor materials, as well as the design, fabrication and characterization of low-dimensional semiconductor devices -
Jiyuan Huang is currently a master's student at the College of Electronic and optical engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts and Telecommunications. His research focuses on the application of Ga2O3 in photoelectrochemical self-powered ultraviolet detectors -
Yan Dong is currently a lecturer at the School of Electronic Engineering, Heilongjiang University. Her current research interests include the preparation of third-generation wide-bandgap semiconductor ion-sensing devices, as well as the application of novel oxide heterojunction materials in ion sensors and pressure sensors -
Jin Wang is currently an associate professor at the College of Electronic and optical engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts and Telecommunications. His current research interests include novel low-dimensional semiconductor materials and devices, flexible electronic devices, as well as the design and fabrication of ultraviolet photodetector devices - Corresponding author: yandong199@smail.nju.edu.cn; jin@njupt.edu.cn
- Revised Date: 2025-03-17 Available Online: 2025-04-08
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Abstract
Low power consumption, high responsivity, and self-powering are key objectives for photoelectrochemical ultraviolet detectors. In this research, In-doped α-Ga₂O₃ nanowire arrays were fabricated on FTO substrates through a hydrothermal approach, with subsequent thermal annealing. These arrays were then used as photoanodes to construct a UV photodetector. In doping reduced the bandgap of α-Ga₂O₃, enhancing its absorption of UV light. Consequently, the In-doped α-Ga₂O₃ nanowire arrays exhibited excellent light detection performance. When irradiated by 255 nm deep ultraviolet light, they obtained a responsivity of 38.85 mA/W. Moreover, the detector's response and recovery times are 13 and 8 ms respectively. The In-doped α-Ga₂O₃ nanowire arrays exhibit a responsivity that is about three-fold higher than the undoped one. Due to its superior responsivity, the In-doped device was used to develop a photoelectric imaging system. This study demonstrates that doping α-Ga₂O₃ nanowires with indium is a potent approach for optimizing their photoelectrochemical performance, which also has significant potential for optoelectronic applications. -
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Supplements
25020024supplementary_material.pdf
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Proportional views
§Junjun Xue and Jiyuan Huang contributed equally to this work and should be considered as co-first authors.
