A minireview on technology and application of silicon integrated single crystal perovskite

Jing Weng; Molang Cai; Xu Pan; Xing Li

doi:10.1088/1674-4926/25040012

J. Semicond. > Just Accepted

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A minireview on technology and application of silicon integrated single crystal perovskite

Jing Weng^{1, 2}, Molang Cai², Xu Pan³ and Xing Li^1,

+ Author Affiliations

Corresponding author: Xing Li, lixing2021@ime.ac.cn

DOI: 10.1088/1674-4926/25040012CSTR: 32376.14.1674-4926.25040012

Abstract: Metal halide perovskites (MHPs) have become promising optoelectronic materials due to their long carrier lifetimes and high mobility. However, the presence of defects and ion migration in MHPs results in high and unstable dark currents, which compromise the stability and detection performance of MHP-based optoelectronic devices. Interfacial engineering has proven to be an effective strategy to reduce defect density in MHPs and suppress ion migration. Given the compatibility of silicon (Si) and MHP processing technologies, coupled with the simplicity and cost-effectiveness of the approach, the integration of MHPs onto Si surfaces has become a prominent area of research. This integration not only enhances device performance but also expands their practical applications. This review provides an overview of the integration technologies for Si and single crystal MHPs, evaluates the advantages and limitations of various integration schemes (including inverse temperature crystallization, vacuum-assisted vapor deposition, and anti-solvent vapor-assisted crystallization), and explores the practical applications of Si/MHP-integrated optoelectronic devices with different structures. These optimized devices exhibit outstanding performance in X-ray detection, multi-wavelength photodetection, and circularly polarized light detection. This review provides a systematic reference for technological innovation and application expansion of Si/MHP-integrated devices.

Key words: silicon, single crystal perovskite, heterogeneous integration, technology, application

References

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Fig. 1. (Color online) Applications and integrated schemes of Si-integrated single crystal perovskite.

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Fig. 2. (Color online) Silicon integrated perovskite single crystal schemes. (a) Inverse temperature crystallization (ITC) Method. Reprinted from Ref. [16], with permission of Nature. (b) Schematic illustration of the epitaxial grown MAPbI₃ SC on silicon substrates with different coupling agent modification (the crystal photographs are the real shots after 36 h growth). Reprinted from Ref. [26], with permission of American Chemical Society. (c) Space-confined ITC Method. Reprinted from Ref. [28], with permission of Wiley. (d) Schematic illustration of the integrated device fabrication process and the chemical structures of the aminosiloxane coupling agents used in this work. (Et and Me in the chemical structures represent ethyl and methyl groups, respectively). Reprinted from Ref. [25], with permission of American Chemical Society. (e) Optimized antisolvent vapor-phase assisted crystallization (AVC) Method. Reprinted from Ref.[17], with permission of American Chemical Society.

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Fig. 3. (Color online) Si/MAPbBr₃ devices in X-ray detection. (a) Schematic illustration of the structure of Si-integrated MAPbBr₃ single crystal devices. Reprinted from Ref. [16], with permission of Nature. (b) Energy level diagram for the interface of the Au/MAPbBr₃ single crystal (left) and the interface of the Si/MAPbBr₃ single crystal with the dipole layer(right). Reprinted from Ref. [16], with permission of Nature. (c) X-ray sensitivity and the lowest detection limit of integrated detectors. Reprinted from Ref. [26], with permission of American Chemical Society. (d) Schematic illustration of X-ray imaging with Si-integrated MAPbBr₃ single crystal detectors(left). X-ray image of the N-shaped logo obtained by the linear detector array(right). Reprinted from Ref. [16], with permission of Nature. (e) X-ray generated photocurrent variation dependent on the irradiation dose rate (the insert is the amplified exhibition for the lowest detection limit region). Reprinted from Ref. [25], with permission of American Chemical Society. (f) Photograph and corresponding X-ray images of a metallic badge hid in the kraft box. The dose rate for imaging is 8.135 mGy_air·s⁻¹, and the electric field is about 8.33 V·mm⁻¹. Reprinted from Ref. [25], with permission of American Chemical Society. (g) Stability test of the pixelated integrated device. Reprinted from Ref. [25], with permission of American Chemical Society.

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Fig. 4. (Color online) Multi-wavelength detector of Au/MAPbBr₃/Si device. (a) Schematic diagram of the Si/perovskite/Au photodetector. Reprinted from Ref.[17], with permission of American Chemical Society. (b) Photocurrent of the device, as a function of wavelength, under illumination with light power density of 225 μW/cm² at a bias of +2 V, displays two entirely different regions: region I and region II. Reprinted from Ref.[17], with permission of American Chemical Society. (c) Energy band diagram of the Si/MAPbBr₃/Au heterojunction photodetector at forward bias. At equilibrium, Ohmic-like contact is formed between Au and perovskite, and a PN heterojunction forms between Si and perovskite. Reprinted from Ref.[17], with permission of American Chemical Society. (d) Schematic diagram of the imaging device, with a square array of pixels of 1.9 mm × 1.9 mm size on it (top). Obtained images by Au/MAPbBr₃/Si device (bottom). Reprinted from Ref.[17], with permission of American Chemical Society. (e) Schematic energy level diagram of the Au/BCP/C₆₀/MAPbBr₃/Si device. Reprinted from Ref. [25], with permission of American Chemical Society. (f) Specific detectivity of the integrated device. Reprinted from Ref. [25], with permission of American Chemical Society.

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Fig. 5. (Color online) Special Applications of Silicon-integrated perovskite single crystal devices. (a) Illustration of the CPL detector of [(R)-MPA]₂PbCl₄/Si. Reprinted from Ref. [18], with permission of Wiley. (b) Photocurrent of the device under RCP and LCP illumination. Reprinted from Ref. [18], with permission of Wiley. (c) Incident-light power dependence of D^* for the [(R)-MPA]₂PbCl₄/Si heterostructure CPL detector. Insert: Incident-light power dependence of D^* of [(R)-MPA]₂PbCl₄ CPL detector. Reprinted from Ref. [18], with permission of Wiley. (d) Schematic diagram showing the structure of MAPbI₃/Si heterojunction. Reprinted from Ref. [19], with permission of Wiley. (e) On–off photo-responses of the PD toward 780 nm laser illumination (6.37 mW·cm⁻²) with different pressures. Reprinted from Ref. [19], with permission of Wiley. (f) Schematic diagram showing how vertical pressure is applied. Reprinted from Ref. [19], with permission of Wiley. (g) On–off photo-responses of the PD under 360, 450, 671, 780, 1064, and 1550 nm laser illumination at zero bias. Reprinted from Ref. [19], with permission of Wiley.

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Fig. 6. (Color online) Integration of perovskites and other substrates. (a) Schematic of a methylammonium lead bromide single crystal integrated onto an ITO glass substrate using methylammonium acetate. Reprinted from Ref. [37], with permission of American Chemical Society. (b) Schematic illustration of MA-assisted integration of single-crystal wafers on ITO substrates. Reprinted from Ref. [38], with permission of Wiley. (c) Integration of CPB thin films and STO substrates by CVD method. Reprinted from Ref. [39], with permission of American Chemical Society. (d) Schematic of perovskite thick film integration with a TFT array using ACA. Reprinted from Ref. [42], with permission of American Chemical Society.

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Table 1. Comparison of fabrication methods for MAPbBr₃ crystals on silicon substrates.

Method	Substrate modification	Seed crystal	Conditions of crystal growth			Crystal thickness
Method	Substrate modification	Seed crystal	Solvent	Temperature	Time	Crystal thickness
ITC^[16]	Aminosiloxanes	Dimensions of ~300 μm	DMF	70 °C	6−8 h	2~3 mm
VAVD^{[25, 26]}	Aminosiloxanes	Appropriate size	DMF	60 °C	6−8 h	~1.1 mm
AVC^{[17, 27]}	/	/	Solvent: DMF Antisolvent: CH₂Cl₂	Room temperature	Several days	2~3 mm

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[19]	Yang Z, Wang H, Guo L J, et al. A self-powered photodetector based on MAPbI₃ single-crystal film/n-Si heterojunction with broadband response enhanced by pyro-phototronic and piezo-phototronic effects. Small, 2021, 17(32), e2101572 doi: 10.1002/smll.202101572
[20]	Zeng L H, Lin S H, Lou Z H, et al. Ultrafast and sensitive photodetector based on a PtSe₂/silicon nanowire array heterojunction with a multiband spectral response from 200 to 1550 nm. NPG Asia Mater, 2018, 10, 352 doi: 10.1038/s41427-018-0035-4
[21]	Liu Z L, Xiong Z J, Yang S F, et al. Strained heterojunction enables high-performance, fully textured perovskite/silicon tandem solar cells. Joule, 2024, 8(10), 2834 doi: 10.1016/j.joule.2024.06.015
[22]	Zhou Y, Zhao L, Ni Z Y, et al. Heterojunction structures for reduced noise in large-area and sensitive perovskite x-ray detectors. Sci Adv, 2021, 7(36), eabg6716 doi: 10.1126/sciadv.abg6716
[23]	Qu W, Weng S K, Zhang L P, et al. Self-powered ultraviolet-visible-near infrared perovskite/silicon hybrid photodetectors based on a novel Si/SnO₂/MAPbI₃/MoO₃ heterostructure. Appl Phys Express, 2020, 13(12), 121001 doi: 10.35848/1882-0786/abc5fa
[24]	Tian S K, Sui F, He K, et al. Co-axial silicon/perovskite heterojunction arrays for high-performance direct-conversion pixelated X-ray detectors. Nano Energy, 2020, 78, 105335 doi: 10.1016/j.nanoen.2020.105335
[25]	Li Z N, Huang S, Chen Y, et al. Vapor-deposited amino coupling of hybrid perovskite single crystals and silicon wafers toward highly efficient multiwavelength photodetection. ACS Appl Mater Interfaces, 2022, 14(46), 52476 doi: 10.1021/acsami.2c14466
[26]	Li Z N, Chen Y, Zhang C, et al. Phenyl-terminated coupling interface enabled highly efficient and stable multiwavelength perovskite single crystal/silicon integrated photodetector. ACS Appl Mater Interfaces, 2023, 15(13), 17377 doi: 10.1021/acsami.3c01008
[27]	Li J Y, Yang Y Z, Ye Z L, et al. Controlled high-quality perovskite single crystals growth for radiation detection: Nucleation and growth kinetics of antisolvent vapor-assisted crystallization. J Mater Sci Technol, 2025, 232, 276 doi: 10.1016/j.jmst.2025.02.019
[28]	Liu Y C, Zhang Y X, Yang Z, et al. Thinness- and shape-controlled growth for ultrathin single-crystalline perovskite wafers for mass production of superior photoelectronic devices. Adv Mater, 2016, 28(41), 9204 doi: 10.1002/adma.201601995
[29]	Liu D, Zheng Y C, Sui X Y, et al. Universal growth of perovskite thin monocrystals from high solute flux for sensitive self-driven X-ray detection. Nat Commun, 2024, 15(1), 2390 doi: 10.1038/s41467-024-46712-y
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[31]	Jiang J Z, Xiong M, Fan K, et al. Synergistic strain engineering of perovskite single crystals for highly stable and sensitive X-ray detectors with low-bias imaging and monitoring. Nat Photonics, 2022, 16, 575 doi: 10.1038/s41566-022-01024-9
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Received: 12 April 2025 Revised: 25 June 2025 Online: Accepted Manuscript: 15 July 2025

Article Navigation > Journal of Semiconductors > 2025 > Accepted Manuscript

Jing Weng, Molang Cai, Xu Pan, Xing Li. A minireview on technology and application of silicon integrated single crystal perovskite[J]. Journal of Semiconductors, 2025, In Press. doi: 10.1088/1674-4926/25040012 ****J Weng, M L Cai, X Pan, and X Li, A minireview on technology and application of silicon integrated single crystal perovskite[J]. J. Semicond., 2025, accepted doi: 10.1088/1674-4926/25040012

Citation:

Jing Weng, Molang Cai, Xu Pan, Xing Li. A minireview on technology and application of silicon integrated single crystal perovskite[J]. Journal of Semiconductors, 2025, In Press. doi: 10.1088/1674-4926/25040012 ****

J Weng, M L Cai, X Pan, and X Li, A minireview on technology and application of silicon integrated single crystal perovskite[J]. J. Semicond., 2025, accepted doi: 10.1088/1674-4926/25040012

Citation:

J Weng, M L Cai, X Pan, and X Li, A minireview on technology and application of silicon integrated single crystal perovskite[J]. J. Semicond., 2025, accepted doi: 10.1088/1674-4926/25040012

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A minireview on technology and application of silicon integrated single crystal perovskite

DOI: 10.1088/1674-4926/25040012

CSTR: 32376.14.1674-4926.25040012

Jing Weng^{1, 2},
Molang Cai²,
Xu Pan³,
Xing Li^1,

1.
Institute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, China
2.
School of New Energy, North China Electric Power University, Beijing 102206, China
3.
Institute of Solid-State Physics, Hefei Institutes of Physical Science, Chinese Academy of Science, Hefei 230031, China

More Information

Jing Weng got her bachelor's degree from North China Electric Power University in 2025. Now she is a master student at Institute of Microelectronics of the Chinese Academy of Sciences. Her research focuses on the development of Si-integrated perovskite X-ray detectors
Xing Li obtained his doctoral degree from East China University of Science and Technology in 2018 and then engaged in postdoctoral research at Beihang University. Since 2021, he has been with the Institute of Microelectronics of the Chinese Academy of Sciences as an associate professor. His current research interests include semiconductor radiation detectors and high-efficiency solar cells
Corresponding author: lixing2021@ime.ac.cn
Received Date: 2025-04-12
Revised Date: 2025-06-25

Available Online: 2025-07-15

Abstract

Abstract

Metal halide perovskites (MHPs) have become promising optoelectronic materials due to their long carrier lifetimes and high mobility. However, the presence of defects and ion migration in MHPs results in high and unstable dark currents, which compromise the stability and detection performance of MHP-based optoelectronic devices. Interfacial engineering has proven to be an effective strategy to reduce defect density in MHPs and suppress ion migration. Given the compatibility of silicon (Si) and MHP processing technologies, coupled with the simplicity and cost-effectiveness of the approach, the integration of MHPs onto Si surfaces has become a prominent area of research. This integration not only enhances device performance but also expands their practical applications. This review provides an overview of the integration technologies for Si and single crystal MHPs, evaluates the advantages and limitations of various integration schemes (including inverse temperature crystallization, vacuum-assisted vapor deposition, and anti-solvent vapor-assisted crystallization), and explores the practical applications of Si/MHP-integrated optoelectronic devices with different structures. These optimized devices exhibit outstanding performance in X-ray detection, multi-wavelength photodetection, and circularly polarized light detection. This review provides a systematic reference for technological innovation and application expansion of Si/MHP-integrated devices.
- silicon,
- single crystal perovskite,
- heterogeneous integration,
- technology,
- application

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