Realization of 193 nm DUV laser through direct frequency doubling with GaN-based UVA laser diode and ABF crystal

Feng Liang; Fangfang Zhang; Jing Yang; Degang Zhao; Shilie Pan

doi:10.1088/1674-4926/25110004

J. Semicond. > In Press

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Realization of 193 nm DUV laser through direct frequency doubling with GaN-based UVA laser diode and ABF crystal

Feng Liang^{1, 2, §}, Fangfang Zhang^{3, 4, §}, Jing Yang^{1, 2,}, Degang Zhao^{1, 2,} and Shilie Pan^{3, 4,}

+ Author Affiliations

1. Laboratory of Solid-State Optoelectronic Information Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
2. School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
3. CAS Key Laboratory of Functional Materials and Devices for Special Environmental Conditions, Xinjiang Key Laboratory of Functional Crystal Materials, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China
4. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
^§Feng Liang and Fangfang Zhang contributed equally to this work and should be considered as co-first authors.

Author Bio:

Feng Liang received Ph.D. degree from University of Chinese Academy of Sciences (UCAS) in 2018. Then he joined in the Institute of Semiconductors, Chinese Academy of Sciences, and he is currently an associate research professor. He focuses on Ⅲ-nitride materials and devices in his research, especially in GaN-based blue and green laser diodes with high optical power. He won the Young Elite Scientists Sponsorship Program by China Association for Science and Technology, and joined in the Youth Innovation Promotion Association of Chinese Academy of Sciences in 2023.

Fangfang Zhang received her B.Sc. degree from Henan University in 2004 and Ph.D. degree from Dalian University of Technology in 2010. Since 2010, she has been serving as a Full Professor at Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences (CAS). Her current research interests focus on design, synthesis, crystal growth and evaluation of new optical-electronic functional materials.

Jing Yang received the Ph.D. degree from University of Chinese Academy of Sciences (UCAS) in 2015. Then she joined in the Institute of Semiconductors, Chinese Academy of Sciences. She is currently a full research professor. Her research interests include MOCVD growth of Ⅲ-nitride material and devices, especially in GaN-based ultra violet laser diodes. She joined in the Youth Innovation Promotion Association of Chinese Academy of Sciences in 2019, and won the Beijing Nova Program in 2020 and the National Youth Talent Support Program in 2024.

Degang Zhao received B.Sc. and M.Sc. in University of Electronic Science and Technology of China in 1994 and 1997, respectively. He received the Ph. D. degree in Chinese Academy of Sciences in 2000. Later on, he joined in Institute of Semiconductors, Chinese Academy of Sciences, Beijing. He won the National Natural Science Foundation for Distinguished Young Scholars in 2009, won the National Award for Youth in Science and Technology of China in 2011. His research interests are mainly focused on GaN-based optoelectronic materials and devices, such as laser diodes and ultraviolet photodetectors. He has got many research achievements in the material growth and device fabrication, and has authored or co-authored over 390 articles in refereed journals and more than 40 patents.

Shilie Pan completed his Ph.D. degree under the supervision of Professor Yicheng Wu (Academician) at the University of Science and Technology of China in 2002. From 2002 to 2004, he was a postdoctoral fellow at the Technical Institute of Physics and Chemistry of Chinese Academy of Sciences (CAS) in the laboratory of Professor Chuangtian Chen (Academician). From 2004 to 2007, he was a postdoctoral fellow at Northwestern University in the laboratory of Professor Kenneth R. Poeppelmeier in USA. Since 2007, he has been serving as a full professor at Xinjiang Technical Institute of Physics and Chemistry, CAS. His current research interests include the design, synthesis, crystal growth and evaluation of new optical-electronic functional materials.

Corresponding author: Jing Yang, yangjing333@semi.ac.cn; Degang Zhao, dgzhao@red.semi.ac.cn; Shilie Pan, slpan@ms.xjb.ac.cn

DOI: 10.1088/1674-4926/25110004CSTR: 10.1088/1674-4926/25110004

References

[1]	Kirner R, Vetter A, Opalevs D, et al. Mask-aligner lithography using a continuous-wave diode laser frequency-quadrupled to 193 nm. Opt Express, 2018, 26(2), 730 doi: 10.1364/OE.26.000730
[2]	Bordonaro G J. DUV photolithography and materials. Encyclopedia of nanotechnology. Dordrecht: Springer Netherlands, 2016, 857
[3]	Barnes B M, Sohn M Y, Goasmat F, et al. Three-dimensional deep sub-wavelength defect detection using λ = 193 nm optical microscopy. Opt Express, 2013, 21(22), 26219 doi: 10.1364/OE.21.026219
[4]	Sohn Y J, Quintanilha R, Barnes B M, et al. 193 nm angle-resolved scatterfield microscope for semiconductor metrology. Instrumentation, Metrology, and Standards for Nanomanufacturing III, 2009, 74050R-8 doi: 10.1117/12.830683
[5]	Liu S W, Liu Z Y, Zhao H, et al. Molecular structure characterization of micro/nanoplastics by 193 nm ultraviolet photodissociation mass spectrometry. Anal Chem, 2023, 95(49), 18046 doi: 10.1021/acs.analchem.3c02625
[6]	Zhou L Q, Liu Z Y, Guo Y J, et al. Ultraviolet photodissociation reveals the molecular mechanism of crown ether microsolvation effect on the gas-phase native-like protein structure. J Am Chem Soc, 2023, 145(2), 1285 doi: 10.1021/jacs.2c11210
[7]	Zhao Z G, Qu C, Igarashi H, et al. Watt-level 193 nm source generation based on compact collinear cascaded sum frequency mixing configuration. Opt Express, OE, 2018, 26(15), 19435 doi: 10.1364/OE.26.019435
[8]	Xuan H W, Zhao Z G, Igarashi H, et al. 300-mW narrow-linewidth deep-ultraviolet light generation at 193 nm by frequency mixing between Yb-hybrid and Er-fiber lasers. Opt Express, 2015, 23(8), 10564 doi: 10.1364/OE.23.010564
[9]	Huang Y J, Yang J, Zhao D G, et al. GaN-based ultraviolet lasers (Invited). J Lasers, 2025, 52(16), 307
[10]	Chen C T, Sasaki T, Li R K, et al. Nonlinear optical Borate crystals. Weinheim: Wiley, 2012
[11]	Shi G Q, Wang Y, Zhang F F, et al. Finding the next deep-ultraviolet nonlinear optical material: NH₄B₄O₆F. J Am Chem Soc, 2017, 139(31), 10645 doi: 10.1021/jacs.7b05943
[12]	Zhang F F, Chen Z L, Cui C, et al. A full breakthrough in vacuum ultraviolet nonlinear optical performance of NH₄B₄O₆F. arXiv: 2503.05019
[13]	Yang J, Huang Y J, Liu Z S, et al. Improving temperature characteristics of GaN-based ultraviolet laser diodes by using InGaN/AlGaN quantum wells. Opt Lett, 2024, 49(5), 1305 doi: 10.1364/OL.515502

Fig. 1. (Color online) (a) Schematic diagram of frequency doubling experiment, (b) the spectra of the fundamental frequency light from GaN-based UVA LDs, and (c) the spectra of second harmonic light.

DownLoad: Full-Size Img PowerPoint

[1]	Kirner R, Vetter A, Opalevs D, et al. Mask-aligner lithography using a continuous-wave diode laser frequency-quadrupled to 193 nm. Opt Express, 2018, 26(2), 730 doi: 10.1364/OE.26.000730
[2]	Bordonaro G J. DUV photolithography and materials. Encyclopedia of nanotechnology. Dordrecht: Springer Netherlands, 2016, 857
[3]	Barnes B M, Sohn M Y, Goasmat F, et al. Three-dimensional deep sub-wavelength defect detection using λ = 193 nm optical microscopy. Opt Express, 2013, 21(22), 26219 doi: 10.1364/OE.21.026219
[4]	Sohn Y J, Quintanilha R, Barnes B M, et al. 193 nm angle-resolved scatterfield microscope for semiconductor metrology. Instrumentation, Metrology, and Standards for Nanomanufacturing III, 2009, 74050R-8 doi: 10.1117/12.830683
[5]	Liu S W, Liu Z Y, Zhao H, et al. Molecular structure characterization of micro/nanoplastics by 193 nm ultraviolet photodissociation mass spectrometry. Anal Chem, 2023, 95(49), 18046 doi: 10.1021/acs.analchem.3c02625
[6]	Zhou L Q, Liu Z Y, Guo Y J, et al. Ultraviolet photodissociation reveals the molecular mechanism of crown ether microsolvation effect on the gas-phase native-like protein structure. J Am Chem Soc, 2023, 145(2), 1285 doi: 10.1021/jacs.2c11210
[7]	Zhao Z G, Qu C, Igarashi H, et al. Watt-level 193 nm source generation based on compact collinear cascaded sum frequency mixing configuration. Opt Express, OE, 2018, 26(15), 19435 doi: 10.1364/OE.26.019435
[8]	Xuan H W, Zhao Z G, Igarashi H, et al. 300-mW narrow-linewidth deep-ultraviolet light generation at 193 nm by frequency mixing between Yb-hybrid and Er-fiber lasers. Opt Express, 2015, 23(8), 10564 doi: 10.1364/OE.23.010564
[9]	Huang Y J, Yang J, Zhao D G, et al. GaN-based ultraviolet lasers (Invited). J Lasers, 2025, 52(16), 307
[10]	Chen C T, Sasaki T, Li R K, et al. Nonlinear optical Borate crystals. Weinheim: Wiley, 2012
[11]	Shi G Q, Wang Y, Zhang F F, et al. Finding the next deep-ultraviolet nonlinear optical material: NH₄B₄O₆F. J Am Chem Soc, 2017, 139(31), 10645 doi: 10.1021/jacs.7b05943
[12]	Zhang F F, Chen Z L, Cui C, et al. A full breakthrough in vacuum ultraviolet nonlinear optical performance of NH₄B₄O₆F. arXiv: 2503.05019
[13]	Yang J, Huang Y J, Liu Z S, et al. Improving temperature characteristics of GaN-based ultraviolet laser diodes by using InGaN/AlGaN quantum wells. Opt Lett, 2024, 49(5), 1305 doi: 10.1364/OL.515502

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Received: 04 November 2025 Revised: Online: Accepted Manuscript: 11 November 2025Uncorrected proof: 11 November 2025

Article Navigation > Journal of Semiconductors > 2026 > Uncorrected proof

Feng Liang, Fangfang Zhang, Jing Yang, Degang Zhao, Shilie Pan. Realization of 193 nm DUV laser through direct frequency doubling with GaN-based UVA laser diode and ABF crystal[J]. Journal of Semiconductors, 2026, In Press. doi: 10.1088/1674-4926/25110004 ****F Liang, F F Zhang, J Yang, D G Zhao, and S L Pan, Realization of 193 nm DUV laser through direct frequency doubling with GaN-based UVA laser diode and ABF crystal[J]. J. Semicond., 2026, 47(1), 010501 doi: 10.1088/1674-4926/25110004

Citation:

F Liang, F F Zhang, J Yang, D G Zhao, and S L Pan, Realization of 193 nm DUV laser through direct frequency doubling with GaN-based UVA laser diode and ABF crystal[J]. J. Semicond., 2026, 47(1), 010501 doi: 10.1088/1674-4926/25110004

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Realization of 193 nm DUV laser through direct frequency doubling with GaN-based UVA laser diode and ABF crystal

DOI: 10.1088/1674-4926/25110004

CSTR: 10.1088/1674-4926/25110004

Feng Liang^{1, 2, §},
Fangfang Zhang^{3, 4, §},
Jing Yang^{1, 2,},
Degang Zhao^{1, 2,},
Shilie Pan^{3, 4,}

1.
Laboratory of Solid-State Optoelectronic Information Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
2.
School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
3.
CAS Key Laboratory of Functional Materials and Devices for Special Environmental Conditions, Xinjiang Key Laboratory of Functional Crystal Materials, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China
4.
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

More Information

Feng Liang received Ph.D. degree from University of Chinese Academy of Sciences (UCAS) in 2018. Then he joined in the Institute of Semiconductors, Chinese Academy of Sciences, and he is currently an associate research professor. He focuses on Ⅲ-nitride materials and devices in his research, especially in GaN-based blue and green laser diodes with high optical power. He won the Young Elite Scientists Sponsorship Program by China Association for Science and Technology, and joined in the Youth Innovation Promotion Association of Chinese Academy of Sciences in 2023
Fangfang Zhang received her B.Sc. degree from Henan University in 2004 and Ph.D. degree from Dalian University of Technology in 2010. Since 2010, she has been serving as a Full Professor at Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences (CAS). Her current research interests focus on design, synthesis, crystal growth and evaluation of new optical-electronic functional materials
Jing Yang received the Ph.D. degree from University of Chinese Academy of Sciences (UCAS) in 2015. Then she joined in the Institute of Semiconductors, Chinese Academy of Sciences. She is currently a full research professor. Her research interests include MOCVD growth of Ⅲ-nitride material and devices, especially in GaN-based ultra violet laser diodes. She joined in the Youth Innovation Promotion Association of Chinese Academy of Sciences in 2019, and won the Beijing Nova Program in 2020 and the National Youth Talent Support Program in 2024
Degang Zhao received B.Sc. and M.Sc. in University of Electronic Science and Technology of China in 1994 and 1997, respectively. He received the Ph. D. degree in Chinese Academy of Sciences in 2000. Later on, he joined in Institute of Semiconductors, Chinese Academy of Sciences, Beijing. He won the National Natural Science Foundation for Distinguished Young Scholars in 2009, won the National Award for Youth in Science and Technology of China in 2011. His research interests are mainly focused on GaN-based optoelectronic materials and devices, such as laser diodes and ultraviolet photodetectors. He has got many research achievements in the material growth and device fabrication, and has authored or co-authored over 390 articles in refereed journals and more than 40 patents
Shilie Pan completed his Ph.D. degree under the supervision of Professor Yicheng Wu (Academician) at the University of Science and Technology of China in 2002. From 2002 to 2004, he was a postdoctoral fellow at the Technical Institute of Physics and Chemistry of Chinese Academy of Sciences (CAS) in the laboratory of Professor Chuangtian Chen (Academician). From 2004 to 2007, he was a postdoctoral fellow at Northwestern University in the laboratory of Professor Kenneth R. Poeppelmeier in USA. Since 2007, he has been serving as a full professor at Xinjiang Technical Institute of Physics and Chemistry, CAS. His current research interests include the design, synthesis, crystal growth and evaluation of new optical-electronic functional materials
Corresponding author: yangjing333@semi.ac.cn; dgzhao@red.semi.ac.cn; slpan@ms.xjb.ac.cn
Received Date: 2025-11-04
Available Online: 2025-11-11

Abstract

^§Feng Liang and Fangfang Zhang contributed equally to this work and should be considered as co-first authors.

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