Fig. 1.
(Color online) Structure of the microwave detection chip based on a cantilever beam.
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Journal of Semiconductors
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2025
> Accepted Manuscript
| Citation: |
Ruifeng Li, Debo Wang. A distributed static model of capacitive MEMS microwave power detection chip[J]. Journal of Semiconductors, 2025, In Press. doi: 10.1088/1674-4926/25100007
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R F Li and D B Wang, A distributed static model of capacitive MEMS microwave power detection chip[J]. J. Semicond., 2025, accepted doi: 10.1088/1674-4926/25100007
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A distributed static model of capacitive MEMS microwave power detection chip
DOI: 10.1088/1674-4926/25100007
CSTR: 32376.14.1674-4926.25100007
More Information-
Ruifeng Li was born in China in 2005. She studies at Nanjing University of Posts and Telecommunications for her undergraduate degree. Her interest is MEMS microwave power detection chip -
Debo Wang was born in China in 1983. He received the B.S. degree in electronic science and technology from the Hebei University of Science and technology, Shijiazhuang, China, in 2007, the M.S. degree and the PhD degree in Key Laboratory of MEMS of the Ministry of Education from the southeast university, Nanjing, China, in 2010 and 2012. He is now a post-doctor in Nanjing University and an associate professor of the Nanjing University of Posts and Telecommunication. The discipline of his research focuses on the RF MEMS devices, particularly on microwave power sensor and its package - Corresponding author: wdb@njupt.edu.cn
- Revised Date: 2025-12-05 Available Online: 2025-12-24
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Abstract
To improve the theoretical prediction accuracy of static mechanical quantities in MEMS cantilever beams for microwave power detection chips, a distributed static model is proposed based on the deflection equation. An analytical framework is established through the precise characterization of cantilever beam bending. The framework can accurately extract key electromechanical parameters, and the correlation between these parameters and geometric changes is systematically studied. Results show that the pull-in voltage increases with the gap but decreases with the length. The predicted pull-in voltage indicates a relative error of only 6.5% between the distributed static model and the simulation, which is significantly lower than that of the other two models. The overload power and sensitivity are also analyzed to facilitate performance trade-offs in chip design. The measured return loss varies between −66.46 dB and −10.56 dB over the 8−12 GHz frequency band, exhibiting a characteristic V-shaped trend. Moreover, the measured sensitivity of 66.5 fF/W closely matches the theoretical value of 69.3 fF/W, showing a relative error of 5.6%. These findings confirm that the distributed model outperforms the other two in terms of both accuracy and physical realism, thereby providing important reference for the design of microwave power detection chips.-
Keywords:
- MEMS,
- power detection,
- cantilever beam,
- static model,
- sensitivity.
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References
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