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AlScN: characteristics, micro/nano fabrication and multiple applications

Shihang Liu1, Jinfeng Gao1, Jiajie Pan1, 2, Lin Li1, Hanxiang Jia1, , Shuangzan Lu1, Maowei Zhang1, Bo Zhao1 and Jun Liu1,

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 Corresponding author: Hanxiang Jia, jiahanxiang@jfslab.com.cn; Jun Liu, liujun@jfslab.com.cn

DOI: 10.1088/1674-4926/25060031CSTR: 10.1088/1674-4926/25060031

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Abstract: Aluminum scandium nitride (AlScN), an emerging Ⅲ-nitride semiconductor material, has attracted significant attention in recent years due to its exceptional piezoelectric properties, high thermal stability, tunable bandgap, and excellent compatibility with micro/nano fabrication. This paper systematically reviews the crystal structure, fundamental properties, and property modulation mechanisms of AlScN. It also summarizes recent progress in micro/nano fabrication technologies, including deposition, etching, and device integration. Furthermore, the applications of AlScN in diverse fields such as micro-electromechanical systems (MEMS), RF communications, energy conversion, optoelectronics and sensors are discussed. Finally, current challenges and promising future research directions for AlScN are outlined.

Key words: aluminum scandium nitride, material properties, micro/nano fabrication, device integration



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Fig. 1.  (Color online) Schematic diagram of AlScN material properties, micro-nano processing and its diverse applications[17−19].

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Fig. 2.  (Color online) (a) Crystal structure of wurtzite type aluminum nitride (AlN); (b) schematic diagrams of Al−N bonds of type B1 and B2[30].

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Fig. 3.  (Color online) (a) AlScN with hexagonal wurtzite structure, where red color represents Al or Sc atoms, blue color represents N atoms. (b) Tetrahedral structure with bond angle[15].

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Fig. 4.  (Color online) Formation energies of the dopant elements in AlN obtained from ab initio calculations[44].

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Fig. 5.  (Color online) (a) Illustration of the wurtzite structure of AlN and the lattice parameters. (b) In AlN, the origin of the direct piezoelectric effect is in the displacement of the charge centers when the material is strained[45].

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Fig. 6.  (Color online) (a) Based on the most promising synthesis schemes from the combinatorial screening, single-phase Al80Sc20N films are synthesized and piezoelectric devices are fabricated with Pt top and bottom electrodes[57]; (b) number of abnormal grains in an area of 100 µm2 as a function of N2 concentration and target-to-substrate distance (inset)[58].

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Fig. 7.  (Color online) (a) The schematic diagram of the modified ALD cycles for atomic layer epitaxy, with an additional step (5) of the Ar plasma treatment for In-situ atomic layer annealing (ALA); (b) schematic diagram of a super-cycle (take AlN: Sc as an example)[60].

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Fig. 8.  (Color online) (a) ABF-STEM investigation of the pristine MOCVD-grown Al0.85Sc0.15N layer (center image). The atomic polarization of the pristine film under the capacitor is identified to grow completely M-polar from the bottom interface (left image) toward the top electrode (right image); (b) ABF-STEM image showing the cone-like domain pattern in the switched region of the film in direct comparison to the pristine region[61].

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Fig. 9.  (Color online) (a) ScAlN-GaN thin film structure grown on GaN; (b) XRD results of ScAlN/GaN films[66].

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Fig. 10.  (Color online) (a) Al0.95Sc0.05N etched for 10 s in 30% KOH at 45 °C; (b) Al0.85Sc0.15N etched for 2.5 min in 30% KOH at 65 °C; (c) vertical etch rate of Al1−xScxN in 30% KOH at 45 °C; (d) lateral etch rate of Al1−xScxN in 30% KOH at 45 °C[71].

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Fig. 11.  (Color online) (a) and (b) The optimized profile is higher than 77°, while the etching surface is very smooth and clean with 550 W ICP power, 80 W RF power and the flow rate of Cl2/BCl3/N2 are 15/30/5 sccm[16]; (c) SEM image of ICP etch profile for Al0.78Sc0.22N film, (d) SEM of the Lamb-wave resonator with floating bottom electrode[15].

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Fig. 12.  (Color online) Inline measurement of the thickness and uniformity of the device film layer. (a) W wafer map diagram of the lower electrode; (b) piezoelectric layer AlScN wafer map diagram; (c) upper electrode Mo wafer map diagram; (d) device film stack diagram.

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Fig. 13.  (Color online) AO devices based on thin-film AlScN photonic platform. (a) Cross-sectional view of the device. It consists of an AlScN ridge waveguide with a width (W) and an etching depth of 220 nm, along with the aluminum IDTs; (b) numerical simulation results of the normalized electric field and strain field profiles[76]; (c) 3D model of the proposed AO device; (d) phase-matching diagram with dispersion curve of optical wave (red line) and incident acoustic wave (green arrow), together with the x-component electric field profiles of the optical mode TE0 in the waveguide[77].

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Fig. 14.  (Color online) Schematic of (a) AlScN-based pyroelectric detector device for CO2 gas sensing; (b) gas sensing approach using AlScN-based pyroelectric detector device[81].

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Fig. 15.  (Color online) (a) Typical structure of 1T-1C DRAM; (b) basic unit structure of Flash memory; (c) typical structure of 1T-1C FeRAM; (d) two different structures of FeFET. The structure on the upper side is similar to a floating gate transistor, while for the lower structure, the gate is on the lower substrate, and 2D material is used as the channel; (e) schematic diagram of FTJ structure and barrier height determined by polarization state[88].

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Table 1.   Typical parameter comparison of AlScN and AlN.

Parameter AlN AlScN Ref.
Piezoelectric coefficient (d33) 5−5.5 pC/N 24−28 pC/N [4]
Electromechanical coupling (Kt2) 6−7% ~25% (for 40% Sc) [5]
Dielectric constant (ε) ~10.1 12.8−17 [6]
Bandgap (Eg) ~6.2 eV 3.2−6.2 eV (Tunable) [10, 11]
Pyroelectric coefficient (p) 6−8 μC/(m2·K) 15−20 μC/ (m2·K) [21]
Remnant polarization (Pr) / >100 μC/cm2 [23, 24]
Coercive field (Ec) / ~5 MV/cm [23, 24]
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Table 2.   Comparison of alternative methods for AlScN deposition.

Method Feature Temperature range Deposition rate Uniformity Ref.
PVD Low cost, good uniformity RT−500 °C High <5% [48, 49]
ALD Atomic-level accuracy, suitable for ultra-thin stacked structures 200−300 °C low <2% [50, 51]
MOCVD High crystalline quality, high yield >900 °C Low <3% [52, 53]
MBE Atomic-level control, superior crystalline <800 °C low <1% [54]
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    Received: 27 June 2025 Revised: 04 October 2025 Online: Accepted Manuscript: 23 October 2025Uncorrected proof: 24 October 2025

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      Shihang Liu, Jinfeng Gao, Jiajie Pan, Lin Li, Hanxiang Jia, Shuangzan Lu, Maowei Zhang, Bo Zhao, Jun Liu. AlScN: characteristics, micro/nano fabrication and multiple applications[J]. Journal of Semiconductors, 2026, In Press. doi: 10.1088/1674-4926/25060031 ****S H Liu, J F Gao, J J Pan, L Li, H X Jia, S Z Lu, M W Zhang, B Zhao, and J Liu, AlScN: characteristics, micro/nano fabrication and multiple applications[J]. J. Semicond., 2026, 47(3), 031301 doi: 10.1088/1674-4926/25060031
      Citation:
      Shihang Liu, Jinfeng Gao, Jiajie Pan, Lin Li, Hanxiang Jia, Shuangzan Lu, Maowei Zhang, Bo Zhao, Jun Liu. AlScN: characteristics, micro/nano fabrication and multiple applications[J]. Journal of Semiconductors, 2026, In Press. doi: 10.1088/1674-4926/25060031 ****
      S H Liu, J F Gao, J J Pan, L Li, H X Jia, S Z Lu, M W Zhang, B Zhao, and J Liu, AlScN: characteristics, micro/nano fabrication and multiple applications[J]. J. Semicond., 2026, 47(3), 031301 doi: 10.1088/1674-4926/25060031
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      AlScN: characteristics, micro/nano fabrication and multiple applications

      DOI: 10.1088/1674-4926/25060031
      CSTR: 10.1088/1674-4926/25060031
      • 1.

        Hubei Jiufengshan Laboratory, Wuhan 430074, China

      • 2.

        School of Science, Hubei University of Technology, Wuhan 430068, China

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      • Shihang Liu received his master's degree in June 2022 from Wuhan University of Technology. Then he joined JFS Laboratory in July 2022 as a thin film process engineer. His main research interests focus on the development of piezoelectric thin film processes
      • Hanxiang Jia got his PhD degree from University of Chinese Academy of Sciences in 2022. Then he joined JFS Laboratory in July 2022 as a senior engineer for thin film technology development. His main research interest focuses on functional films including piezoelectric films, metal−semi contact and phase-change alloys
      • Jun Liu received his PhD degree in electrical and electronic engineering from the City University of Hong Kong in 2014. Dr. Liu joined Hubei Jiufengshan Laboratory (JFS) as director of process center and is now a professor of JFS. He mainly worked on compound semiconductor modeling, processing and characterization
      • Corresponding author: jiahanxiang@jfslab.com.cn; liujun@jfslab.com.cn
      • Received Date: 2025-06-27
      • Revised Date: 2025-10-04
        • Available Online: 2025-10-23

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