We put forward an n-ZnO/p-Si heterojunction solar cell model based on AFORS-HET simulations and provide experimental support in this article. ZnO:B (B-doped ZnO) thin films deposited by metal-organic chemical vapor deposition (MOCVD) are planned to act as electrical emitter layer on p-type c-Si substrate for photovoltaic applications. We investigate the effects of thickness, buffer layer, ZnO:B affinity and work function of electrodes on performances of solar cells through computer simulations using AFORS-HET software package. The energy conversion efficiency of the ZnO:B (n)/ZnO/c-Si (p) solar cell can achieve 17.16% (V_oc: 675.8 mV, J_sc:30.24 mA/cm², FF: 83.96%) via simulation. On a basis of optimized conditions in simulation, we carry out some experiments, which testify that the ZnO buffer layer of 20 nm contributes to improving performances of solar cells. The influences of growth temperature, thickness and diborane (B₂H₆) flow rates are also discussed. We achieve an appropriate condition for the fabrication of the solar cells using the MOCVD technique. The obtained conversion efficiency reaches 2.82% (V_oc: 294.4 mV, J_sc: 26.108 mA/cm², FF: 36.66%).

Currently, the global 5G network, cloud computing, and data center industries are experiencing rapid development. The continuous growth of data center traffic has driven the vigorous progress in high-speed optical transceivers for optical interconnection within data centers. The electro-absorption modulated laser (EML), which is widely used in optical fiber communications, data centers, and high-speed data transmission systems, represents a high-performance photoelectric conversion device. Compared to traditional directly modulated lasers (DMLs), EMLs demonstrate lower frequency chirp and higher modulation bandwidth, enabling support for higher data rates and longer transmission distances. This article introduces the composition, working principles, manufacturing processes, and applications of EMLs. It reviews the progress on advanced indium phosphide (InP)-based EML devices from research institutions worldwide, while summarizing and comparing data transmission rates and key technical approaches across various studies.

Artificial intelligence (AI) processes data-centric applications with minimal effort. However, it poses new challenges to system design in terms of computational speed and energy efficiency. The traditional von Neumann architecture cannot meet the requirements of heavily data-centric applications due to the separation of computation and storage. The emergence of computing in-memory (CIM) is significant in circumventing the von Neumann bottleneck. A commercialized memory architecture, static random-access memory (SRAM), is fast and robust, consumes less power, and is compatible with state-of-the-art technology. This study investigates the research progress of SRAM-based CIM technology in three levels: circuit, function, and application. It also outlines the problems, challenges, and prospects of SRAM-based CIM macros.

In recent years, propelled by the rapid iterative advancements in digital imaging technology and the semiconductor industry, encompassing microelectronic design, manufacturing, packaging, and testing, time-of-flight (ToF)-based imaging systems for acquiring depth information have garnered considerable attention from both academia and industry. This technology has emerged as a focal point of research within the realm of 3D imaging. Owing to its relatively straightforward principles and exceptional performance, ToF technology finds extensive applications across various domains including human−computer interaction, autonomous driving, industrial inspection, medical and healthcare, augmented reality, smart homes, and 3D reconstruction, among others. Notably, the increasing maturity of ToF-based LiDAR systems is evident in current developments. This paper comprehensively reviews the fundamental principles of ToF technology and LiDAR systems, alongside recent research advancements. It elucidates the innovative aspects and technical challenges encountered in both transmitter (TX) and receiver (RX), providing detailed discussions on corresponding solutions. Furthermore, the paper explores prospective avenues for future research, offering valuable insights for subsequent investigations.

Resistive random-access memory (RRAM), also known as memristors, having a very simple device structure with two terminals, fulfill almost all of the fundamental requirements of volatile memory, nonvolatile memory, and neuromorphic characteristics. Its memory and neuromorphic behaviors are currently being explored in relation to a range of materials, such as biological materials, perovskites, 2D materials, and transition metal oxides. In this review, we discuss the different electrical behaviors exhibited by RRAM devices based on these materials by briefly explaining their corresponding switching mechanisms. We then discuss emergent memory technologies using memristors, together with its potential neuromorphic applications, by elucidating the different material engineering techniques used during device fabrication to improve the memory and neuromorphic performance of devices, in areas such as I_ON/I_OFF ratio, endurance, spike time-dependent plasticity (STDP), and paired-pulse facilitation (PPF), among others. The emulation of essential biological synaptic functions realized in various switching materials, including inorganic metal oxides and new organic materials, as well as diverse device structures such as single-layer and multilayer hetero-structured devices, and crossbar arrays, is analyzed in detail. Finally, we discuss current challenges and future prospects for the development of inorganic and new materials-based memristors.

With recent developments of deep ultraviolet (DUV) light-emitting diodes and solar-blind detectors, UV communication (UVC) shows great potential in replacing traditional wireless communication in more and more scenarios. Based on the atmospheric scattering of UV radiation, UVC has gained considerable attention due to its non-line-of-sight ability, omnidirectional communication links and low background noise. These advantages make UVC an ideal option for covert secure communication, especially for military communication. In this review, we present the history and working principle of UVC with a special focus on its light sources and detectors. Comprehensive comparison and application of its light sources and detectors are provided to the best of our knowledge. We further discuss the future application and outlook of UVC. Hopefully, this review will offer valuable insights into the future development of UVC.

Ferroelectric hysteresis loop measurement under high driving frequency generally faces great challenges. Parasitic factors in testing circuits such as leakage current and RC delay could result in abnormal hysteresis loops with erroneous remnant polarization (P_r) and coercive field (E_c). In this study, positive-up-negative-down (PUND) measurement under a wide frequency range was performed on a 10-nm thick Hf_0.5Zr_0.5O₂ ferroelectric film. Detailed analysis on the leakage current and RC delay was conducted as the polarization switching occurs in the FE capacitor. After considering the time lag caused by RC delay, reasonable calibration of current response over the voltage pulse stimulus was employed in the integral of polarization current over time. In such a method, rational P–V loops measured at high frequencies (>1 MHz) was successfully achieved. This work provides a comprehensive understanding on the effect of parasitic factors on the polarization switching behavior of FE films.

Integrating electrochromic (EC) and photochromic (PC) functions within a single material system holds great significance for the development of next-generation intelligent responsive materials. Traditional organic photochromic materials are all small molecules and oligomers, which require the photochemical response of specific photosensitive groups. However, PEDOT:PSS, a classic electrochromic polymer, has never been reported to exhibit photochromic properties due to the absence of photosensitive groups. Herein, we report for the first time the photochromic properties of PEDOT:PSS films, demonstrating their simultaneous capability of multi-field coupling response in the aspects of light, electricity and chemistry. The composite film undergoes a rapid color change from light blue to dark blue under ultraviolet light irradiation. This is attributed to the transformation process from the bipolarons state to the polarons state in the PEDOT:PSS, induced by photogenerated electrons as confirmed by EPR and Raman analyses. Furthermore, the developed hydrogel system enhances charge separation, yielding a 30.1% relative transmittance change and month-long stability. This work fills the long-standing gap in the understanding of the photochromic and electrochromic mechanisms of PEDOT:PSS, providing fundamental insights into carrier dynamics at organic-inorganic interfaces and laying the foundation for the development of multi-mode stimuli-responsive devices.