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A wide-bandgap copolymer donor with a 5-methyl-4H-dithieno[3,2-e:2',3'-g]isoindole-4,6(5H)-dione unit 229
Anxin Sun, Jingui Xu, Guanhua Zong, Zuo Xiao, Yong Hua, Bin Zhang, Liming Ding
2021, 42(10): 100502. doi: 10.1088/1674-4926/42/10/100502

High-speed electro-absorption modulated laser 111
Zhenyao Li, Chen Lyu, Xuliang Zhou, Mengqi Wang, Haotian Qiu, Yejin Zhang, Hongyan Yu, Jiaoqing Pan
2025, 46(11): 111401. doi: 10.1088/1674-4926/25030015

Currently, the global 5G network, cloud computing, and data center industries are experiencing rapid development. The continuous growth of data center traffic has driven the vigorous progress in high-speed optical transceivers for optical interconnection within data centers. The electro-absorption modulated laser (EML), which is widely used in optical fiber communications, data centers, and high-speed data transmission systems, represents a high-performance photoelectric conversion device. Compared to traditional directly modulated lasers (DMLs), EMLs demonstrate lower frequency chirp and higher modulation bandwidth, enabling support for higher data rates and longer transmission distances. This article introduces the composition, working principles, manufacturing processes, and applications of EMLs. It reviews the progress on advanced indium phosphide (InP)-based EML devices from research institutions worldwide, while summarizing and comparing data transmission rates and key technical approaches across various studies.

A 112 Gbps DSP-based PAM4 SerDes receiver with a wide band equalization tuning AFE in 7 nm FinFET 73
Huanan Guo, Yufeng Yao, Jiazhen Ni, Xiang Gao
2025, 46(6): 062204. doi: 10.1088/1674-4926/25030001

In DSP-based SerDes application, it is essential for AFE to implement a pre-ADC equalization to provide a better signal for ADC and DSP. To meet the various equalization requirements of different channel and transmitter configurations, this paper presents a 112 Gbps DSP-Based PAM4 SerDes receiver with a wide band equalization tuning AFE. The AFE is realized by implementing source degeneration transconductance, feedforward high-pass branch and inductive feedback peaking TIA. The AFE offers a flexible equalization gain tuning of up to 17.5 dB at Nyquist frequency without affecting the DC gain. With the proposed AFE, the receiver demonstrates eye opening after digital FIR equalization and achieves 6 × 10−9 BER with a 29.6 dB insertion loss channel.

Emerging trends of precision analog circuits in ISSCC 2026 67
Haihua Li, Dan Shi, Pui-In Mak, Rui Paulo Martins, Ka-Meng Lei
2026, 47(7): 070203. doi: 10.1088/1674-4926/26040027

Photonic computing chips under the speed-complexity trade-off 66
Xinyue Sun, Guoqiang Yang, Yitong Chen, Guangtao Zhai
2026, 47(9): 090201. doi: 10.1088/1674-4926/26020065

From device non-idealities to computation accuracy: A cross-layer review of error mechanisms and mitigation in analog in-memory computing 66
Zeying Ding, Yantong Di, Haoran Du, Haoran Chen, Yaoru Hou, Bo Liu, Hao Cai
doi: 10.1088/1674-4926/26060006

Analog in-memory computing (AIMC) has attracted significant attention as an energy-efficient computing paradigm for data-intensive workloads. However, its practical deployment is fundamentally limited by various non-idealities across multiple abstraction levels, which degrade computational accuracy and reliability. This paper presents a comprehensive review of non-idealities in AIMC systems from a cross-layer perspective. A common computational representation is introduced to illustrate how diverse physical non-idealities may manifest as weight perturbations, multiplicative distortions, nonlinear transfer effects, additive errors, and quantization or accumulation errors. From this perspective, we review design techniques across device, array, circuit, data-conversion, and system levels, and discuss how errors are generated, transformed, and accumulated throughout the computation flow. Furthermore, algorithm-hardware co-design strategies are discussed as an effective approach to mitigate cross-layer errors and enhance system robustness. By providing a structured overview of error generation, transformation, and propagation, this work highlights the importance of cross-layer co-design and offers insights into the design trade-offs among accuracy, efficiency, and scalability in AIMC systems.

体硅衬底上的CMOS Fin FET(英文) 60
2003, 24(4): 351-356.
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Indium–gallium–zinc–oxide thin-film transistors: Materials, devices, and applications 59
Ying Zhu, Yongli He, Shanshan Jiang, Li Zhu, Chunsheng Chen, Qing Wan
2021, 42(3): 031101. doi: 10.1088/1674-4926/42/3/031101

Since the invention of amorphous indium–gallium–zinc–oxide (IGZO) based thin-film transistors (TFTs) by Hideo Hosono in 2004, investigations on the topic of IGZO TFTs have been rapidly expanded thanks to their high electrical performance, large-area uniformity, and low processing temperature. This article reviews the recent progress and major trends in the field of IGZO-based TFTs. After a brief introduction of the history of IGZO and the main advantages of IGZO-based TFTs, an overview of IGZO materials and IGZO-based TFTs is given. In this part, IGZO material electron travelling orbitals and deposition methods are introduced, and the specific device structures and electrical performance are also presented. Afterwards, the recent advances of IGZO-based TFT applications are summarized, including flat panel display drivers, novel sensors, and emerging neuromorphic systems. In particular, the realization of flexible electronic systems is discussed. The last part of this review consists of the conclusions and gives an outlook over the field with a prediction for the future.

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