Chemical mechanical polishing (CMP) serves as an indispensable process for achieving global planarization in semiconductor manufacturing, especially as integrated circuit (IC) technology advances to sub-7 nm nodes, where atomic-level surface flatness becomes crucial. Silica abrasives, which account for over 90% of the abrasive market in advanced CMP processes, operate not through simple mechanical grinding but through a key "chemical-mechanical synergistic" mechanism: chemically softening the wafer surface, then mechanically removing the softened layer to expose a new surface, which is further softened and removed, repeating this cycle to produce a smooth wafer. Despite their prevalence, conventional silica abrasives still face challenges, including relatively low material removal rate (MRR), a tendency to agglomerate, leading to poor dispersion and surface defects, and limitations in achieving ultimate surface uniformity. Significant progress has been made to address these issues. Development has progressed from simple spherical particles to complex structural designs (such as mesoporous, hollow, and raspberry-shaped structures) to enhance slurry transport and mechanical action. Surface chemical modifications (e.g., using amino or polymer groups) can improve dispersion stability and reduce scratching. Furthermore, composites with other materials (e.g., ceria, polymers) and precise control of particle size distribution are key to enhancing performance. These innovative approaches have yielded significant performance gains. State-of-the-art slurries have demonstrated the ability to achieve surface roughness below 0.1 nm rms. The development of silica abrasives is increasingly focused on sustainability and smart manufacturing. A prominent direction is the design of biodegradable abrasives that disintegrate after use, thereby simplifying post-chemical mechanical polishing (CMP) cleanup and minimizing environmental impact—an approach fully aligned with green manufacturing principles. This review systematically summarizes the progress of silica abrasives for CMP over the past 60 years. This summary provides theoretical insights and forward-looking strategies to overcome the current limitations of abrasive technology. We believe this review will be helpful in advancing the field of CMP abrasives towards next-generation semiconductor manufacturing.

Fifteen periods of Si/Si_0.7Ge_0.3 multilayers (MLs) with various SiGe thicknesses are grown on a 200 mm Si substrate using reduced pressure chemical vapor deposition (RPCVD). Several methods were utilized to characterize and analyze the ML structures. The high resolution transmission electron microscopy (HRTEM) results show that the ML structure with 20 nm Si_0.7Ge_0.3 features the best crystal quality and no defects are observed. Stacked Si_0.7Ge_0.3 ML structures etched by three different methods were carried out and compared, and the results show that they have different selectivities and morphologies. In this work, the fabrication process influences on Si/SiGe MLs are studied and there are no significant effects on the Si layers, which are the channels in lateral gate all around field effect transistor (L-GAAFET) devices. For vertically-stacked dynamic random access memory (VS-DRAM), it is necessary to consider the dislocation caused by strain accumulation and stress release after the number of stacked layers exceeds the critical thickness. These results pave the way for the manufacture of high-performance multivertical-stacked Si nanowires, nanosheet L-GAAFETs, and DRAM devices.

The kinetics process and control process of chemical mechanical high precision finishing for material surfaces were studied. According to the experiments, the seven kinetics process for chemical mechanical polishing (CMP)was generalized.Through investigating the CMP process of ULSI silicon substrate，we found that the chemical process was the CMP control process under the same mechanical action condition, which was determined by emperature. The key factor influencing the chemical reactions was effectively settled, which will be advantageous for ireproving the CMP removal rate for other materials.

Since the invention of amorphous indium–gallium–zinc–oxide (IGZO) based thin-film transistors (TFTs) by Hideo Hosono in 2004, investigations on the topic of IGZO TFTs have been rapidly expanded thanks to their high electrical performance, large-area uniformity, and low processing temperature. This article reviews the recent progress and major trends in the field of IGZO-based TFTs. After a brief introduction of the history of IGZO and the main advantages of IGZO-based TFTs, an overview of IGZO materials and IGZO-based TFTs is given. In this part, IGZO material electron travelling orbitals and deposition methods are introduced, and the specific device structures and electrical performance are also presented. Afterwards, the recent advances of IGZO-based TFT applications are summarized, including flat panel display drivers, novel sensors, and emerging neuromorphic systems. In particular, the realization of flexible electronic systems is discussed. The last part of this review consists of the conclusions and gives an outlook over the field with a prediction for the future.

The heterogeneous integration of III–V devices with Si-CMOS on a common Si platform has shown great promise in the new generations of electrical and optical systems for novel applications, such as HEMT or LED with integrated control circuitry. For heterogeneous integration, direct wafer bonding (DWB) techniques can overcome the materials and thermal mismatch issues by directly bonding dissimilar materials systems and device structures together. In addition, DWB can perform at wafer-level, which eases the requirements for integration alignment and increases the scalability for volume production. In this paper, a brief review of the different bonding technologies is discussed. After that, three main DWB techniques of single-, double- and multi-bonding are presented with the demonstrations of various heterogeneous integration applications. Meanwhile, the integration challenges, such as micro-defects, surface roughness and bonding yield are discussed in detail.

The rapid rise in the power conversion efficiency (PCE) of CsPbBr₂I-based perovskite solar cells (PSCs), from 4.7% in 2016 to 11.08% in 2020, render it a promising material for use in photovoltaic devices. However, the phase stability and current hysteresis caused by photo-induced phase segregation in CsPbBr₂I represent major obstacles to further improvements in the PCE for such devices. In this review, we describe the basic structure and optical properties of CsPbBr₂I, and systematically elaborate on the mechanism of the phase transition. We then discuss the strategies in progress to suppress phase transition in CsPbBr₂I, and their potential application in the photovoltaic field. Finally, challenges and application prospects for CsPbBr₂I PSCs are summarized in the final section of this article.