J. Semicond. > 2026, Volume 47 > Issue 4 > 042306
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Ultrathin amorphous-Ga2O3 vertical SBD-based bridge rectifier and its hybrid buck system

Haifeng Chen, Yuduo Zhang, Xiexin Sun, Xuyang Liu, Chunling Chen, Xiangtai Liu, Jia Zhang and Yahan Zhu

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 Corresponding author: Haifeng Chen, chenhaifeng@xupt.edu.cn

DOI: 10.1088/1674-4926/25100008CSTR: 32376.14.1674-4926.25100008

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Abstract: This paper demonstrated a monolithically integrated 200 nm-ultrathin amorphous-Ga2O3 vertical SBD-based bridge rectifier and its hybrid buck conversion system with a Si-MOSFET. The fabricated vertical Ga2O3 SBD exhibits excellent characteristics and a high breakdown electric field strength of 1.35 MV/cm. The bridge rectifier circuit maintains stable operation at high frequencies of 50 kHz. And the hybrid buck system composed of the Ga2O3 bridge rectifier and Si-MOSFET achieves adjustable step-down voltage output under the conditions of a 20 kHz switching frequency of Si-MOSFET and 50 Hz Vin. This work validates the practical value of Ga2O3 rectifiers in high-frequency conversion systems.

Key words: amorphous-Ga2O3, Schottky barrier diode, bridge rectifier, buck system



[1]
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[2]
Ahmadi E, Oshima Y. Materials issues and devices of α- and β-Ga2O3. J Appl Phys, 2019, 126(16): 160901 doi: 10.1063/1.5123213
[3]
Higashiwaki M, Sasaki K, Kuramata A, et al. Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates. Appl Phys Lett, 2012, 100: 013504 doi: 10.1063/1.3674287
[4]
Al-Ahmadi N A. Metal oxide semiconductor-based Schottky diodes: A review of recent advances. Mater Res Express, 2020, 7(3): 032001 doi: 10.1088/2053-1591/ab7a60
[5]
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[6]
Wilhelmi F, Komatsu Y, Yamaguchi S, et al. Switching properties of 600 V Ga2O3 diodes with different chip sizes and thicknesses. IEEE Trans Power Electron, 2023, 38(7): 8406 doi: 10.1109/TPEL.2023.3260023
[7]
Jahdi S, Kumar A S, Deakin M, et al. β-Ga2O3 in power electronics converters: Opportunities & challenges. IEEE Open J Power Electron, 2024, 5: 554 doi: 10.1109/OJPEL.2024.3387076
[8]
Taboada Vasquez J M, Li X H. A review of vertical Ga2O3 diodes: From fabrication to performance optimization and future outlooks. Phys Status Solidi B, 2025, 262(8): 2400635 doi: 10.1002/pssb.202400635
[9]
Dwari S, Parsa L. An efficient AC–DC step-up converter for low-voltage energy harvesting. IEEE Trans Power Electron, 2010, 25(8): 2188 doi: 10.1109/TPEL.2010.2044192
[10]
Mansouri M, Kaboli S, Selvaraj J, et al. A review of single phase power factor correction A. C.-D. C. converters. 2013 IEEE Conference on Clean Energy and Technology (CEAT), 2013: 389 doi: 10.1109/CEAT.2013.6775662
[11]
Gabriel K, Fayrouz H, Nessakh B, et al. 2.45GHz low-power diode bridge rectifier design. 2023 International Conference on Microelectronics (ICM), 2023: 979-8-3 doi: 10.1109/ICM60448.2023.10378938
[12]
Zhou K, He Q M, Jian G Z, et al. A unified hybrid compact model of β-Ga2O3 Schottky barrier diodes for mixer and rectifier applications. Sci China Inf Sci, 2021, 64(11): 219403 doi: 10.1007/s11432-021-3224-2
[13]
Hong W, Zhang C, Zhang F, et al. Performance improvement of β-Ga2O3 SBD-based rectifier with embedded microchannels in ceramic substrate. Sci China Inf Sci, 2024, 67(5): 159404 doi: 10.1007/s11432-024-3992-8
[14]
Chen H F, Zhang Y D, Sun X X, et al. Solar-blind UV light-modulated β-Ga2O3 full-wave bridge rectifier. J Semicond, 2026, 47: 012301 doi: 10.1088/1674-4926/25040027
[15]
Kaur D, Rakhi, Vashishtha P, et al. Surface nanopatterning of amorphous gallium oxide thin film for enhanced solar-blind photodetection. Nanotechnology, 2022, 33: 375302 doi: 10.1088/1361-6528/ac76d3
Fig. 1.  (Color online) (a) Image of fabricated Ga2O3 full-wave bridge rectifier; (b) 3D schematic diagram of rectifier; (c) cross-sectional view of a single vertical SBD; (d) schematic illustration of the rectifier after wire bonding.

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Fig. 2.  (Color online) (a) XPS survey of as-grown amorphous Ga2O3 film on Au layer; (b) high-resolution Ga 3d spectrum; (c) high-resolution O 1s spectrum; (d) I–V curves of SBD; (e) I–V curves of SBD in the semi-logarithmic coordinate; (f) reverse breakdown characteristics of SBD.

DownLoad: Full-Size Img PowerPoint
Fig. 3.  (Color online) (a) Half-wave rectification characteristics of single SBD at different frequencies; the inset shows the test setup; (b)square wave input signal test; (c) relationship between the slope |dV/dt| at the polarity transition point and the maximum Vop.

DownLoad: Full-Size Img PowerPoint
Fig. 4.  (Color online) (a) I–V curves of the four SBDs in the bridge rectifier. (b) Test loop of the rectifier and the buck system. (c) Output signals under 50 Hz input signals of 3.3, 5, and 10 V. (d) Output signals under different Vin of 5 V with 1 Hz–50 kHz. (e) Filtered output signals with capacitors of different capacitance values. (f) DC output characteristics under various switching duty cycles of MOSFET.

DownLoad: Full-Size Img PowerPoint
[1]
Higashiwaki M, Wong M H. Beta-gallium oxide material and device technologies. Annu Rev Mater Res, 2024, 54(1): 175 doi: 10.1146/annurev-matsci-080921-104058
[2]
Ahmadi E, Oshima Y. Materials issues and devices of α- and β-Ga2O3. J Appl Phys, 2019, 126(16): 160901 doi: 10.1063/1.5123213
[3]
Higashiwaki M, Sasaki K, Kuramata A, et al. Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates. Appl Phys Lett, 2012, 100: 013504 doi: 10.1063/1.3674287
[4]
Al-Ahmadi N A. Metal oxide semiconductor-based Schottky diodes: A review of recent advances. Mater Res Express, 2020, 7(3): 032001 doi: 10.1088/2053-1591/ab7a60
[5]
Kim M, Seo J H, Singisetti U, et al. Recent advances in free-standing single crystalline wide band-gap semiconductors and their applications: GaN, SiC, ZnO, β-Ga2O3, and diamond. J Mater Chem C, 2017, 5(33): 8338 doi: 10.1039/C7TC02221B
[6]
Wilhelmi F, Komatsu Y, Yamaguchi S, et al. Switching properties of 600 V Ga2O3 diodes with different chip sizes and thicknesses. IEEE Trans Power Electron, 2023, 38(7): 8406 doi: 10.1109/TPEL.2023.3260023
[7]
Jahdi S, Kumar A S, Deakin M, et al. β-Ga2O3 in power electronics converters: Opportunities & challenges. IEEE Open J Power Electron, 2024, 5: 554 doi: 10.1109/OJPEL.2024.3387076
[8]
Taboada Vasquez J M, Li X H. A review of vertical Ga2O3 diodes: From fabrication to performance optimization and future outlooks. Phys Status Solidi B, 2025, 262(8): 2400635 doi: 10.1002/pssb.202400635
[9]
Dwari S, Parsa L. An efficient AC–DC step-up converter for low-voltage energy harvesting. IEEE Trans Power Electron, 2010, 25(8): 2188 doi: 10.1109/TPEL.2010.2044192
[10]
Mansouri M, Kaboli S, Selvaraj J, et al. A review of single phase power factor correction A. C.-D. C. converters. 2013 IEEE Conference on Clean Energy and Technology (CEAT), 2013: 389 doi: 10.1109/CEAT.2013.6775662
[11]
Gabriel K, Fayrouz H, Nessakh B, et al. 2.45GHz low-power diode bridge rectifier design. 2023 International Conference on Microelectronics (ICM), 2023: 979-8-3 doi: 10.1109/ICM60448.2023.10378938
[12]
Zhou K, He Q M, Jian G Z, et al. A unified hybrid compact model of β-Ga2O3 Schottky barrier diodes for mixer and rectifier applications. Sci China Inf Sci, 2021, 64(11): 219403 doi: 10.1007/s11432-021-3224-2
[13]
Hong W, Zhang C, Zhang F, et al. Performance improvement of β-Ga2O3 SBD-based rectifier with embedded microchannels in ceramic substrate. Sci China Inf Sci, 2024, 67(5): 159404 doi: 10.1007/s11432-024-3992-8
[14]
Chen H F, Zhang Y D, Sun X X, et al. Solar-blind UV light-modulated β-Ga2O3 full-wave bridge rectifier. J Semicond, 2026, 47: 012301 doi: 10.1088/1674-4926/25040027
[15]
Kaur D, Rakhi, Vashishtha P, et al. Surface nanopatterning of amorphous gallium oxide thin film for enhanced solar-blind photodetection. Nanotechnology, 2022, 33: 375302 doi: 10.1088/1361-6528/ac76d3

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    History

    Received: 11 October 2025 Revised: 06 December 2025 Online: Accepted Manuscript: 30 December 2025Uncorrected proof: 31 December 2025Published: 21 April 2026

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      Article Navigation >  Journal of Semiconductors  > 2026  >  47(4): 042306
      Haifeng Chen, Yuduo Zhang, Xiexin Sun, Xuyang Liu, Chunling Chen, Xiangtai Liu, Jia Zhang, Yahan Zhu. Ultrathin amorphous-Ga2O3 vertical SBD-based bridge rectifier and its hybrid buck system[J]. Journal of Semiconductors, 2026, 47(4): 042306. doi: 10.1088/1674-4926/25100008 ****H F Chen, Y D Zhang, X X Sun, X Y Liu, C L Chen, X T Liu, J Zhang, and Y H Zhu, Ultrathin amorphous-Ga2O3 vertical SBD-based bridge rectifier and its hybrid buck system[J]. J. Semicond., 2026, 47(4): 042306 doi: 10.1088/1674-4926/25100008
      Citation:
      Haifeng Chen, Yuduo Zhang, Xiexin Sun, Xuyang Liu, Chunling Chen, Xiangtai Liu, Jia Zhang, Yahan Zhu. Ultrathin amorphous-Ga2O3 vertical SBD-based bridge rectifier and its hybrid buck system[J]. Journal of Semiconductors, 2026, 47(4): 042306. doi: 10.1088/1674-4926/25100008 ****
      H F Chen, Y D Zhang, X X Sun, X Y Liu, C L Chen, X T Liu, J Zhang, and Y H Zhu, Ultrathin amorphous-Ga2O3 vertical SBD-based bridge rectifier and its hybrid buck system[J]. J. Semicond., 2026, 47(4): 042306 doi: 10.1088/1674-4926/25100008
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      Ultrathin amorphous-Ga2O3 vertical SBD-based bridge rectifier and its hybrid buck system

      DOI: 10.1088/1674-4926/25100008
      CSTR: 32376.14.1674-4926.25100008

      • Key Laboratory of Advanced Semiconductor Devices and Materials, School of Electronic Engineering, Xi’an University of Posts and Telecommunications, Xi’an 710121, China

      More Information
      • Haifeng Chen received the Ph.D. degree from Xidian University in 2008. He is currently a Professor at the Xi’an University of Posts and Telecommunications. His research interests focus on Ga2O3 material and devices
      • Yuduo Zhang received his BS degree from Xi’an University of Posts and Telecommunications in 2023. He is currently a Master's student at Xi’an University of Posts and telecommunications. His research focuses on Ga2O3 devices
      • Xiexin Sun is currently pursuing a master's degree at Xi'an University of Posts and Telecommunications. He is currently a first-year student in the School of Electronic Engineering at Xi'an University of Posts and Telecommunications. His research interests lie in Ga2O3 devices and DC–DC circuits
      • Corresponding author: chenhaifeng@xupt.edu.cn
      • Received Date: 2025-10-11
      • Revised Date: 2025-12-06
        • Available Online: 2025-12-30

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