| Citation: |
Xiao Deyuan, Wang Xi, Yuan Haijiang, Yu Yuehui, Xie Zhifeng, Chi Minhwa. A novel GAAC FinFET transistor: device analysis, 3D TCAD simulation, and fabrication[J]. Journal of Semiconductors, 2009, 30(1): 014001. doi: 10.1088/1674-4926/30/1/014001
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Xiao D Y, Wang X, Yuan H J, Yu Y H, Xie Z F, Chi M H. A novel GAAC FinFET transistor: device analysis, 3D TCAD simulation, and fabrication[J]. J. Semicond., 2009, 30(1): 014001. doi: 10.1088/1674-4926/30/1/014001.
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A novel GAAC FinFET transistor: device analysis, 3D TCAD simulation, and fabrication
DOI: 10.1088/1674-4926/30/1/014001
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Abstract
We report the analysis and TCAD results of a gate-all-around cylindrical (GAAC) FinFET with operation based on channel accumulation. The cylindrical channel of the GAAC FinFET is essentially controlled by an infinite number of gates surrounding the cylinder-shaped channel. The symmetrical nature of the field in the channel leads to improved electrical characteristics, e.g. reduced leakage current and negligible corner effects. Thee Ion/Ioff ratio of the device can be larger than 106, as the key parameter for device operation. The GAAC FinFET operating in accumulation mode appears to be a good potential candidate for scaling down to sub-10 nm sizes.
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Keywords:
- accumulation mode,
- GAAC FinFET,
- device analysis,
- TCAD simulation,
- fabrication
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References
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Proportional views
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