| Citation: |
Cao Zigui, Sun Ling, Lee Elton. Characterization of the triple-gate flash memory endurancedegradation mechanism[J]. Journal of Semiconductors, 2009, 30(1): 014003. doi: 10.1088/1674-4926/30/1/014003
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Cao Z G, Sun L, Lee E. Characterization of the triple-gate flash memory endurancedegradation mechanism[J]. J. Semicond., 2009, 30(1): 014003. doi: 10.1088/1674-4926/30/1/014003.
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Characterization of the triple-gate flash memory endurancedegradation mechanism
DOI: 10.1088/1674-4926/30/1/014003
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Abstract
Write/erase degradation after endurance cycling due to electron trapping events in triple-gate flash memory have been detected and analyzed using a UV erasure method. Different from the commonly degradation phenomenon, write-induced electron trapping in the floating gate oxide, electron trapping in tunneling oxide is observed in triple-gate flash memory. Further, the degradation due to single-electron locally trapping/de-trapping in horn-shaped SuperFlash does not occur in the triple-gate flash cell. This is because of planar poly-to-poly erasing in the triple-gate flash cell instead of tip erasing in the horn-shaped SuperFlash cell. Moreover, by TCAD simulation, the trap location is identified and the magnitude of its density is quantified roughly.-
Keywords:
- Fowler-Nordheim tunneling,
- endurance,
- traps,
- UV erasure
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References
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Proportional views
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