| Citation: |
Ding Wuchang, Zuo Yuhua, Zhang Yun, Guo Jianchuan, Cheng Buwen, Yu Jinzhong, Wang Qiming, Guo Hengqun, Lü Peng, Shen Jiwei. Photoluminescence spectroscopy of sputtering Er-doped silicon-rich silicon nitride films[J]. Journal of Semiconductors, 2009, 30(10): 102001. doi: 10.1088/1674-4926/30/10/102001
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Ding W C, Zuo Y H, Zhang Y, Guo J C, Cheng B W, Yu J Z, Wang Q M, Guo H Q, Lü P, Shen J W. Photoluminescence spectroscopy of sputtering Er-doped silicon-rich silicon nitride films[J]. J. Semicond., 2009, 30(10): 102001. doi: 10.1088/1674-4926/30/10/102001.
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Photoluminescence spectroscopy of sputtering Er-doped silicon-rich silicon nitride films
DOI: 10.1088/1674-4926/30/10/102001
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Abstract
Er-doped silicon-rich silicon nitride (SRN) films were deposited on silicon substrate by an RF magnetron reaction sputtering system. After high temperature annealing, the films show intense photoluminescence in both the visible and infrared regions. Besides broad-band luminescence centered at 780 nm which originates from silicon nanocrystals, resolved peaks due to transitions from all high energy levels up to 2H11/2 to the ground state of Er3+ are observed. Raman spectra and HRTEM measurements have been performed to investigate the structure of the films, and possible excitation processes are discussed.-
Keywords:
- photoluminescence,
- silicon nitride,
- Er doping
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References
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