Growth of CdS crystals by the physical vapor transport method

Cheng Hongjuan; Xu Yongkuan; Yang Wei; Yu Xianglu; Yan Ruyue; Lai Zhanping

doi:10.1088/1674-4926/30/10/103002

Article Navigation > Journal of Semiconductors > 2009 > 30(10): 103002

Cheng Hongjuan, Xu Yongkuan, Yang Wei, Yu Xianglu, Yan Ruyue, Lai Zhanping. Growth of CdS crystals by the physical vapor transport method[J]. Journal of Semiconductors, 2009, 30(10): 103002. doi: 10.1088/1674-4926/30/10/103002 ****Cheng H J, Xu Y K, Yang W, Yu X L, Yan R Y, Lai Z P. Growth of CdS crystals by the physical vapor transport method[J]. J. Semicond., 2009, 30(10): 103002. doi: 10.1088/1674-4926/30/10/103002.

Citation:

Cheng Hongjuan, Xu Yongkuan, Yang Wei, Yu Xianglu, Yan Ruyue, Lai Zhanping. Growth of CdS crystals by the physical vapor transport method[J]. Journal of Semiconductors, 2009, 30(10): 103002. doi: 10.1088/1674-4926/30/10/103002 ****

Cheng H J, Xu Y K, Yang W, Yu X L, Yan R Y, Lai Z P. Growth of CdS crystals by the physical vapor transport method[J]. J. Semicond., 2009, 30(10): 103002. doi: 10.1088/1674-4926/30/10/103002.

Citation:

Cheng H J, Xu Y K, Yang W, Yu X L, Yan R Y, Lai Z P. Growth of CdS crystals by the physical vapor transport method[J]. J. Semicond., 2009, 30(10): 103002. doi: 10.1088/1674-4926/30/10/103002.

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Growth of CdS crystals by the physical vapor transport method

DOI: 10.1088/1674-4926/30/10/103002

China Electronics Technology Group Corporation, No. 46 Research Institute, Tianjin 300220, China
China Electronics Technology Group Corporation, No. 46 Research Institute, Tianjin 300220, China
China Electronics Technology Group Corporation, No. 46 Research Institute, Tianjin 300220, China
China Electronics Technology Group Corporation, No. 46 Research Institute, Tianjin 300220, China
China Electronics Technology Group Corporation, No. 46 Research Institute, Tianjin 300220, China
China Electronics Technology Group Corporation, No. 46 Research Institute, Tianjin 300220, China

Received Date: 2015-08-18
Accepted Date: 2009-02-19
Revised Date: 2009-05-22
Published Date: 2009-09-28

Abstract

Abstract

Based on the physical vapor transport (PVT) method, the growth of large-size CdS crystals inside a vertical semi-closed tube is studied. Firstly, in order to ensure 1D diffusion-advection transport, multi-thin tubes are used in the growth tube. The XRD spectra of the CdS crystal grown in this configuration indicates that the crystal quality has clearly been improved, where the FWHM is 58.5 arcsec. Secondly, theoretical and experimental growth rates under different total pressures are compared; the results show that the experiential growth rate equation is valid for our semi-tube growth, and it could be used to estimate the growth rate and maximum growth time under different total pressures.
- CdS

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Growth of CdS crystals by the physical vapor transport method

DOI: 10.1088/1674-4926/30/10/103002

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Growth of CdS crystals by the physical vapor transport method

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