| Citation: |
Duan Huantao, Hao Yue, Zhang Jincheng. Effect of nucleation layer morphology on crystal quality, surface morphology and electrical properties of AlGaN/GaN heterostructures[J]. Journal of Semiconductors, 2009, 30(10): 105002. doi: 10.1088/1674-4926/30/10/105002
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Duan H T, Hao Y, Zhang J C. Effect of nucleation layer morphology on crystal quality, surface morphology and electrical properties of AlGaN/GaN heterostructures[J]. J. Semicond., 2009, 30(10): 105002. doi: 10.1088/1674-4926/30/10/105002.
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Effect of nucleation layer morphology on crystal quality, surface morphology and electrical properties of AlGaN/GaN heterostructures
DOI: 10.1088/1674-4926/30/10/105002
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Abstract
Nucleation layer formation is a key factor for high quality gallium nitride (GaN) growth on a sapphire substrate. We found that the growth rate substantially affected the nucleation layer morphology, thereby having a great impact on the crystal quality, surface morphology and electrical properties of AlGaN/GaN heterostructures on sapphire substrates. A nucleation layer with a low growth rate of 2.5 nm/min is larger and has better coalescence than one grown at a high growth rate of 5 nm/min. AlGaN/GaN heterostructures on a nucleation layer with low growth rate have better crystal quality, surface morphology and electrical properties.-
Keywords:
- MOCVD
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References
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Proportional views
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