
SEMICONDUCTOR INTEGRATED CIRCUITS
Abstract: A fifth/seventh order dual-mode OTA-C complex filter for global navigation satellite system receivers is implemented in a 0.18 μm CMOS process. This filter can be configured as the narrow mode of a 4.4 MHz bandwidth center at 4.1 MHz or the wide mode of a 22 MHz bandwidth center at 15.42 MHz. A fully differential OTA with source degeneration is used to provide sufficient linearity. Furthermore, a ring CCO based frequency tuning scheme is proposed to reduce frequency variation. The measured results show that in narrow-band mode the image rejection ratio (IMRR) is 35 dB, the filter dissipates 0.8 mA from the 1.8 V power supply, and the out-of-band rejection is 50 dB at 6 MHz offset. In wide-band mode, IMRR is 28 dB and the filter dissipates 3.2 mA. The frequency tuning error is less than ±2%.
Key words: complex filter
1 |
V. Rajagopal Reddy, B. Asha, Chel-Jong Choi Journal of Semiconductors, 2017, 38(6): 064001. doi: 10.1088/1674-4926/38/6/064001 |
2 |
A high-conductivity insulated gate bipolar transistor with Schottky hole barrier contact Mengxuan Jiang, Z. John Shen, Jun Wang, Xin Yin, Zhikang Shuai, et al. Journal of Semiconductors, 2016, 37(2): 024011. doi: 10.1088/1674-4926/37/2/024011 |
3 |
Effect of ultrasound on reverse leakage current of silicon Schottky barrier structure O.Ya Olikh, K.V. Voitenko, R.M. Burbelo, JaM. Olikh Journal of Semiconductors, 2016, 37(12): 122002. doi: 10.1088/1674-4926/37/12/122002 |
4 |
Lara Valentic, Nima E. Gorji Journal of Semiconductors, 2015, 36(9): 094012. doi: 10.1088/1674-4926/36/9/094012 |
5 |
Kamal Zeghdar, Lakhdar Dehimi, Achour Saadoune, Nouredine Sengouga Journal of Semiconductors, 2015, 36(12): 124002. doi: 10.1088/1674-4926/36/12/124002 |
6 |
Tan Hairen, You Jingbi, Zhang Shuguang, Gao Hongli, Yin Zhigang, et al. Journal of Semiconductors, 2011, 32(10): 102002. doi: 10.1088/1674-4926/32/10/102002 |
7 |
Jie Binbin, Sah Chihtang Journal of Semiconductors, 2011, 32(12): 121001. doi: 10.1088/1674-4926/32/12/121001 |
8 |
Fabrication and characteristics of a 4H-SiC junction barrier Schottky diode Chen Fengping, Zhang Yuming, Lü Hongliang, Zhang Yimen, Guo Hui, et al. Journal of Semiconductors, 2011, 32(6): 064003. doi: 10.1088/1674-4926/32/6/064003 |
9 |
Physical effect on transition from blocking to conducting state of barrier-type thyristor Li Hairong, Li Siyuan Journal of Semiconductors, 2010, 31(12): 124003. doi: 10.1088/1674-4926/31/12/124003 |
10 |
Zhang Yong, Yang Jianhong, Cai Xueyuan, Wang Zaixing Journal of Semiconductors, 2010, 31(4): 044002. doi: 10.1088/1674-4926/31/4/044002 |
11 |
M. A. Yeganeh, S. H. Rahmatollahpur Journal of Semiconductors, 2010, 31(7): 074001. doi: 10.1088/1674-4926/31/7/074001 |
12 |
Design of an ultra-low-power digital processor for passive UHF RFID tags Shi Wanggen, Zhuang Yiqi, Li Xiaoming, Wang Xianghua, Jin Zhao, et al. Journal of Semiconductors, 2009, 30(4): 045004. doi: 10.1088/1674-4926/30/4/045004 |
13 |
Optimized design of 4H-SiC floating junction power Schottky barrier diodes Pu Hongbin, Cao Lin, Chen Zhiming, Ren Jie Journal of Semiconductors, 2009, 30(4): 044001. doi: 10.1088/1674-4926/30/4/044001 |
14 |
(NH4)2S treatment of the Si (100) surface and its effects on Al/Si Schottky barrier heights Hu Aibin, Wang Wenwu, Xu Qiuxia Journal of Semiconductors, 2009, 30(8): 084001. doi: 10.1088/1674-4926/30/8/084001 |
15 |
Adjustment of NiSi/n-Si SBH by post-silicide of dopant segregation process Shang Haiping, Xu Qiuxia Journal of Semiconductors, 2009, 30(10): 106001. doi: 10.1088/1674-4926/30/10/106001 |
16 |
Effect of Pt Addition on the Stress of NiSi Film Formed on Si (100) Huang Wei, Ru Guoping, Detavernier C, Van Meirhaeghe R L, Jiang Yulong, et al. Chinese Journal of Semiconductors , 2007, 28(5): 635-639. |
17 |
Study of NiSi/Si Interface by Cross-Section Transmission Electron Microscopy Jiang Yulong, Ru Guoping, Qu Xinping, Li Bingzong Chinese Journal of Semiconductors , 2006, 27(2): 223-228. |
18 |
Amorphization Implant Technology in NiSi SALICIDE Process Jiang Yulong, Ru Guoping, Qu Xinping, Li Bingzong Chinese Journal of Semiconductors , 2006, 27(S1): 385-388. |
19 |
Design and Fabrication of Schottky Diode with Standard CMOS Process Li Qiang, Wang Junyu, Han Yifeng,and Min Hao Chinese Journal of Semiconductors , 2005, 26(2): 238-242. |
20 |
Anealing Effect on Cu/ Ni/4H-SiC Schottky Barrier Yang Weifeng, Yang Keqin, Chen Xiaping, Zhang Feng, Wang Liangjun, et al. Chinese Journal of Semiconductors , 2005, 26(S1): 277-280. |
Article views: 4422 Times PDF downloads: 2557 Times Cited by: 0 Times
Received: 18 August 2015 Revised: 20 May 2009 Online: Published: 01 October 2009
Citation: |
Gan Yebing, Ma Chengyan, Yuan Guoshun. A dual-mode complex filter for GNSS receivers with frequency tuning[J]. Journal of Semiconductors, 2009, 30(10): 105004. doi: 10.1088/1674-4926/30/10/105004
****
Gan Y B, Ma C Y, Yuan G S. A dual-mode complex filter for GNSS receivers with frequency tuning[J]. J. Semicond., 2009, 30(10): 105004. doi: 10.1088/1674-4926/30/10/105004.
|
Journal of Semiconductors © 2017 All Rights Reserved 京ICP备05085259号-2