| Citation: |
Shang Haiping, Xu Qiuxia. Adjustment of NiSi/n-Si SBH by post-silicide of dopant segregation process[J]. Journal of Semiconductors, 2009, 30(10): 106001. doi: 10.1088/1674-4926/30/10/106001
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Shang H P, Xu Q X. Adjustment of NiSi/n-Si SBH by post-silicide of dopant segregation process[J]. J. Semicond., 2009, 30(10): 106001. doi: 10.1088/1674-4926/30/10/106001.
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Adjustment of NiSi/n-Si SBH by post-silicide of dopant segregation process
DOI: 10.1088/1674-4926/30/10/106001
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Abstract
The post-silicide of dopant segregation process for adjusting NiSi/n-Si SBH (Schottky barrier height) is described. Adopting the analysis of the I–V characteristic curve and extrapolating the SBH of NiSi/n-Si Schottky junction diodes (NiSi/n-Si SJDs), the effects of different of process parameters dopant segregation, including segregation anneal temperature and dopant implant dose, on the properties of the NiSi/n-Si SJDs have been studied, and the corresponding mechanisms are discussed.-
Keywords:
- NiSi/n-Si SJD,
- SBH,
- dopant segregation
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References
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Proportional views
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