J. Semicond. > 2009, Volume 30 > Issue 11 > 113001
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SEMICONDUCTOR MATERIALS

Particular electrical quality of a-plane GaN films grown on r-plane sapphire by metal-organic chemical vapor deposition

Xu Shengrui, Zhou Xiaowei, Hao Yue, Mao Wei, Zhang Jincheng, Zhang Zhongfen, Bai Lin, Zhang Jinfeng and Li Zhiming

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DOI: 10.1088/1674-4926/30/11/113001

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Abstract: Nonpolar (1120) a-plane GaN films have been grown by low-pressure metal-organic vapor deposition on r-plane (1102) sapphire substrate. The structural and electrical properties of the a-plane GaN films are investigated by high-resolution X-ray diffraction (HRXRD), atomic force microscopy (AFM) and van der Pauw Hall measurement. It is found that the Hall voltage shows more anisotropy than that of the c-plane samples; furthermore, the mobility changes with the degree of the van der Pauw square diagonal to the c direction, which shows significant electrical anisotropy. Further research indicates that electron mobility is strongly influenced by edge dislocations.

Key words: GaN

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    Received: 18 August 2015 Revised: 22 June 2009 Online: Published: 01 November 2009

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      Article Navigation >  Journal of Semiconductors  > 2009  >  30(11): 113001
      Xu Shengrui, Zhou Xiaowei, Hao Yue, Mao Wei, Zhang Jincheng, Zhang Zhongfen, Bai Lin, Zhang Jinfeng, Li Zhiming. Particular electrical quality of a-plane GaN films grown on r-plane sapphire by metal-organic chemical vapor deposition[J]. Journal of Semiconductors, 2009, 30(11): 113001. doi: 10.1088/1674-4926/30/11/113001 ****Xu S R, Zhou X W, Hao Y, Mao W, Zhang J C, Zhang Z F, Bai L, Zhang J F, Li Z M. Particular electrical quality of a-plane GaN films grown on r-plane sapphire by metal-organic chemical vapor deposition[J]. J. Semicond., 2009, 30(11): 113001. doi: 10.1088/1674-4926/30/11/113001.
      Citation:
      Xu Shengrui, Zhou Xiaowei, Hao Yue, Mao Wei, Zhang Jincheng, Zhang Zhongfen, Bai Lin, Zhang Jinfeng, Li Zhiming. Particular electrical quality of a-plane GaN films grown on r-plane sapphire by metal-organic chemical vapor deposition[J]. Journal of Semiconductors, 2009, 30(11): 113001. doi: 10.1088/1674-4926/30/11/113001 ****
      Xu S R, Zhou X W, Hao Y, Mao W, Zhang J C, Zhang Z F, Bai L, Zhang J F, Li Z M. Particular electrical quality of a-plane GaN films grown on r-plane sapphire by metal-organic chemical vapor deposition[J]. J. Semicond., 2009, 30(11): 113001. doi: 10.1088/1674-4926/30/11/113001.
      shu

      Particular electrical quality of a-plane GaN films grown on r-plane sapphire by metal-organic chemical vapor deposition

      DOI: 10.1088/1674-4926/30/11/113001

      • Key Laboratory of Fundamental Science for National on Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China

      • Key Laboratory of Fundamental Science for National on Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China

      • Key Laboratory of Fundamental Science for National on Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China

      • Key Laboratory of Fundamental Science for National on Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China

      • Key Laboratory of Fundamental Science for National on Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China

      • Key Laboratory of Fundamental Science for National on Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China

      • Xi'an Division of China Academy of Space Technology, Xi'an 710000, China

      • Key Laboratory of Fundamental Science for National on Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China

      • Key Laboratory of Fundamental Science for National on Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China

      • Received Date: 2015-08-18
      • Accepted Date: 2009-04-04
      • Revised Date: 2009-06-22
      • Published Date: 2009-10-29

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