InP/InGaAs heterojunction bipolar transistors with different μ-bridge structures

Yu Jinyong; Liu Xinyu; Xia Yang

doi:10.1088/1674-4926/30/11/114001

J. Semicond. > 2009, Volume 30 > Issue 11 > 114001

SEMICONDUCTOR DEVICES

InP/InGaAs heterojunction bipolar transistors with different μ-bridge structures

Yu Jinyong, Liu Xinyu and Xia Yang

+ Author Affiliations

DOI: 10.1088/1674-4926/30/11/114001

Abstract: Several μ-bridge structures for InP-based heterojunction bipolar transistors (HBTs) are reported. The radio frequency measurement results of these InP HBTs are compared with each other. The comparison shows that μ-bridge structures reduce the parasites and double μ-bridge structures have a better effect. Due to the utilization of the double μ-bridges, both the cutoff frequency fT and also the maximum oscillation frequency fmax of the 2 × 12.5 μm2 InP/InGaAs HBT reach nearly 160 GHz. The results also show that the μ-bridge has a better effect in increasing the high frequency performance of a narrow emitter InP HBT.

Key words: InP, HBT, μ-bridge

1	A 20-GHz ultra-high-speed InP DHBT comparator Huang Zhenxing, Zhou Lei, Su Yongbo, Jin Zhi Journal of Semiconductors, 2012, 33(7): 075003. doi: 10.1088/1674-4926/33/7/075003
2	High breakdown voltage InGaAs/InP double heterojunction bipolar transistors with f_max = 256 GHz and BV_CEO = 8.3 V Cheng Wei, Zhao Yan, Gao Hanchao, Chen Chen, Yang Naibin, et al. Journal of Semiconductors, 2012, 33(1): 014004. doi: 10.1088/1674-4926/33/1/014004
3	Ultra high-speed InP/InGaAs SHBTs with f_t and f_max of 185 GHz Zhou Lei, Jin Zhi, Su Yongbo, Wang Xiantai, Chang Hudong, et al. Journal of Semiconductors, 2010, 31(9): 094007. doi: 10.1088/1674-4926/31/9/094007
4	A Monolithic InGaP/GaAs HBT Power Amplifier Design with Improved Gain Flatness Zhu Min, Yin Junjian, Zhang Haiying Journal of Semiconductors, 2008, 29(8): 1441-1444.
5	Ultra High-Speed InP/InGaAs SHBTs with ft of 210GHz Cheng Wei, Jin Zhi, Liu Xinyu, Yu Jinyong, Xu Anhuai, et al. Journal of Semiconductors, 2008, 29(3): 414-417.
6	Multi-Finger Power SiGe HBT with Non-Uniform Finger Spacing Jin Dongyue, Zhang Wanrong, Shen Pei, Xie Hongyun, Wang Yang, et al. Chinese Journal of Semiconductors , 2007, 28(10): 1527-1531.
7	X Band MMIC Power Amplifier Based on InGaP/GaAs HBT Chen Yanhu, Shen Huajun, Wang Xiantai, Ge Ji, Li Bin, et al. Chinese Journal of Semiconductors , 2007, 28(5): 759-762.
8	Effect of Deep Traps in Carrier Generation and Transport in Undoped InP Wafers Zhou Xiaolong, Sun Niefeng, Yang Ruixia, Zhang Weiyu, Sun Tongnian, et al. Chinese Journal of Semiconductors , 2007, 28(S1): 24-27.
9	A Multi-Finger Si1-xGex/Si Heterojunction Bipolar Transistor for Wireless Power Amplifier Applications Xue Chunlai, Shi Wenhua, Yao Fei, Cheng Buwen, Wang Hongjie, et al. Chinese Journal of Semiconductors , 2007, 28(4): 496-499.
10	Surface Damage and Removal of Ar+ Etched InGaAs,n-InP and p-InP Lü Yanqiu, Yue Fangyu, Hong Xuekun, Chen Jiangfeng, Han Bing, et al. Chinese Journal of Semiconductors , 2007, 28(1): 122-126.
11	Agilent HBT Model Parameters Extraction Procedure For InP HBT’ He Jia, Sun Lingling, Liu Jun Chinese Journal of Semiconductors , 2007, 28(S1): 443-447.
12	Design of InGaAsP Composite Collector for InP DHBT Cheng Wei, Jin Zhi, Yu Jinyong, Liu Xinyu Chinese Journal of Semiconductors , 2007, 28(6): 943-946.
13	Growth and characterization of InP-based and phosphorous-involved materials for applications to HBTs by GSMBE were studied systematically. High quality 50ram InP-based HBT and 100mm InGaP/GaAs HBT epitaxial materials were obtained through optimizing the HBT structure design and the GSMBE growth condition. It is shown that the HBT devices and circuits with high performance can be achieved by using the epi-wafers grown by the GSMBE technology developed in this work. Qi Ming, Xu Anhuai, Ai Likun, Sun Hao, Zhu Fuying, et al. Chinese Journal of Semiconductors , 2007, 28(S1): 182-185.
14	InP/InGaAs Heterojunction Bipolar Transistor with Base μ-Bridge and Emitter Air-Bridge Yu Jinyong, Liu Xinyu, Su Shubing, Wang Runmei, Xu Anhuai, et al. Chinese Journal of Semiconductors , 2007, 28(2): 154-158.
15	GaAs HBT Microwave Power Transistor with On-Chip Stabilization Network Chen Yanhu, Shen Huajun, Wang Xiantai, Ge Ji, Li Bin, et al. Chinese Journal of Semiconductors , 2006, 27(12): 2075-2079.
16	Effects of Bandgap Narrowing Induced by heavy Doping in Abrupt HBTs on Their Currents Zhou Shouli, Cui Hailin, Huang Yongqing, Ren Xiaomin Chinese Journal of Semiconductors , 2006, 27(1): 110-114.
17	Performance of an InP DHBT Grown by MBE Su Shubing, Liu Xinyu, Xu Anhuai, Yu Jinyong, Qi Ming, et al. Chinese Journal of Semiconductors , 2006, 27(5): 792-795.
18	Design and Process for Self-Aligned InP/InGaAs SHBT Structure Li Xianjie, Cai Daomin, Zhao Yonglin, Wang Quanshu, Zhou Zhou, et al. Chinese Journal of Semiconductors , 2005, 26(S1): 136-139.
19	GaAsSb/InP HBT Growth on InP Substrates XU Xian-gang, LIU Zhe, CUI De-liang Chinese Journal of Semiconductors , 2002, 23(9): 962-965.
20	Carrier Depth Profile of Si/SiGe/Si n-p-n HBT Structural Materials Characterized by Electrochemical Capacitance- Voltage Method Chinese Journal of Semiconductors , 2000, 21(11): 1050-1054.

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Yu Jinyong, Liu Xinyu, Xia Yang. InP/InGaAs heterojunction bipolar transistors with different μ-bridge structures[J]. Journal of Semiconductors, 2009, 30(11): 114001. doi: 10.1088/1674-4926/30/11/114001

Yu J Y, Liu X Y, Xia Y. InP/InGaAs heterojunction bipolar transistors with different μ-bridge structures[J]. J. Semicond., 2009, 30(11): 114001. doi: 10.1088/1674-4926/30/11/114001.

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Received: 18 August 2015 Revised: 26 June 2009 Online: Published: 01 November 2009

Several μ-bridge structures for InP-based heterojunction bipolar transistors (HBTs) are reported. The radio frequency measurement results of these InP HBTs are compared with each other. The comparison shows that μ-bridge structures reduce the parasites and double μ-bridge structures have a better effect. Due to the utilization of the double μ-bridges, both the cutoff frequency fT and also the maximum oscillation frequency fmax of the 2 × 12.5 μm2 InP/InGaAs HBT reach nearly 160 GHz. The results also show that the μ-bridge has a better effect in increasing the high frequency performance of a narrow emitter InP HBT.

InP/InGaAs heterojunction bipolar transistors with different μ-bridge structures

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