J. Semicond. > 2009, Volume 30 > Issue 11 > 114005
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SEMICONDUCTOR DEVICES

Novel lateral IGBT with n-region controlled anode on SOI substrate

Chen Wensuo, Xie Gang, Zhang Bo, Li Zehong and Li Zhaoji

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DOI: 10.1088/1674-4926/30/11/114005

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Abstract: A new lateral insulated-gate bipolar transistor (LIGBT) structure on SOI substrate, called an n-region controlled anode LIGBT (NCA-LIGBT), is proposed and discussed. The n-region controlled anode concept results in fast switch speeds, efficient area usage and effective suppression NDR in forward I–V characteristics. Simulation results of the key parameters (n-region doping concentration, length, thickness and p-base doping concentration) show that the NCA-LIGBT has a good tradeoff between turn-off time and on-state voltage drop. The proposed LIGBT is a novel device for power ICs such as PDP scan driver ICs.

Key words: turn-off time,  on-state voltage drop,  NDR,  power ICs

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    Received: 18 August 2015 Revised: 12 June 2009 Online: Published: 01 November 2009

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      Article Navigation >  Journal of Semiconductors  > 2009  >  30(11): 114005
      Chen Wensuo, Xie Gang, Zhang Bo, Li Zehong, Li Zhaoji. Novel lateral IGBT with n-region controlled anode on SOI substrate[J]. Journal of Semiconductors, 2009, 30(11): 114005. doi: 10.1088/1674-4926/30/11/114005 ****Chen W S, Xie G, Zhang B, Li Z H, Li Z J. Novel lateral IGBT with n-region controlled anode on SOI substrate[J]. J. Semicond., 2009, 30(11): 114005. doi: 10.1088/1674-4926/30/11/114005.
      Citation:
      Chen Wensuo, Xie Gang, Zhang Bo, Li Zehong, Li Zhaoji. Novel lateral IGBT with n-region controlled anode on SOI substrate[J]. Journal of Semiconductors, 2009, 30(11): 114005. doi: 10.1088/1674-4926/30/11/114005 ****
      Chen W S, Xie G, Zhang B, Li Z H, Li Z J. Novel lateral IGBT with n-region controlled anode on SOI substrate[J]. J. Semicond., 2009, 30(11): 114005. doi: 10.1088/1674-4926/30/11/114005.
      shu

      Novel lateral IGBT with n-region controlled anode on SOI substrate

      DOI: 10.1088/1674-4926/30/11/114005

      • State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China

      • State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China

      • State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China

      • State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China

      • State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China

      • Received Date: 2015-08-18
      • Accepted Date: 2009-05-12
      • Revised Date: 2009-06-12
      • Published Date: 2009-10-29

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