| Citation: |
Yuan Tingting, Liu Xinyu, Zheng Yingkui, Li Chengzhan, Wei Ke, Liu Guoguo. Impact of UV/ozone surface treatment on AlGaN/GaN HEMTs[J]. Journal of Semiconductors, 2009, 30(12): 124001. doi: 10.1088/1674-4926/30/12/124001
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Yuan T T, Liu X Y, Zheng Y K, Li C Z, Wei K, Liu G G. Impact of UV/ozone surface treatment on AlGaN/GaN HEMTs[J]. J. Semicond., 2009, 30(12): 124001. doi: 10.1088/1674-4926/30/12/124001.
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Abstract
Surface treatment plays an important role in the process of making high performance AlGaN/GaN HEMTs. A clean surface is critical for enhancing device performance and long-term reliability. By experimenting with different surface treatment methods, we find that using UV/ozone treatment significantly influences the electrical properties of Ohmic contacts and Schottky contacts. According to these experimental phenomena and X-ray photoelectron spectroscopy surface analysis results, the effect of the UV/ozone treatment and the reason that it influences the Ohmic/Schottky contact characteristics of AlGaN/GaN HEMTs is investigated.-
Keywords:
- AlGaN/GaN HEMT
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References
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Proportional views
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