| Citation: |
He Jin, Ma Chenyue, Wang Hao, Chen Xu, Zhang Chenfei, Lin Xinnan, Zhang Xing. Clear correspondence between gated-diode R-G current and performance degradation of SOI n-MOSFETs after F--N stress tests[J]. Journal of Semiconductors, 2009, 30(12): 124004. doi: 10.1088/1674-4926/30/12/124004
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He J, Ma C Y, Wang H, Chen X, Zhang C F, Lin X N, Zhang X. Clear correspondence between gated-diode R-G current and performance degradation of SOI n-MOSFETs after F--N stress tests[J]. J. Semicond., 2009, 30(12): 124004. doi: 10.1088/1674-4926/30/12/124004.
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Clear correspondence between gated-diode R-G current and performance degradation of SOI n-MOSFETs after F--N stress tests
DOI: 10.1088/1674-4926/30/12/124004
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Abstract
A clear correspondence between the gated-diode generation–recombination (R–G) current and the performance degradation of an SOI n-channel MOS transistor after F–N stress tests has been demonstrated. Due to the increase of interface traps after F–N stress tests, the R–G current of the gated-diode in the SOI-MOSFET architecture increases while the performance characteristics of the MOSFET transistor such as the saturation drain current and sub-threshold slope are degraded. From a series of experimental measurements of the gated-diode and SOI-MOSFET DC characteristics, a linear decrease of the drain saturation current and increase of the threshold voltage as well as a like-line rise of the sub-threshold swing and a corresponding degradation in the trans-conductance are also observed. These results provide theoretical and experimental evidence for us to use the gated-diode tool to monitor SOI-MOSFET degradation.-
Keywords:
- MOSFET degradation
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References
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Proportional views
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