Role of CF2 in the etching of SiO2, Si3N4 and Si in fluorocarbon plasma

Chen Lele; Zhu Liang; Xu Linda; Li Dongxia; Cai Hui; Pao Tod

doi:10.1088/1674-4926/30/3/033005

J. Semicond. > 2009, Volume 30 > Issue 3 > 033005

SEMICONDUCTOR MATERIALS

Role of CF2 in the etching of SiO2, Si3N4 and Si in fluorocarbon plasma

Chen Lele, Zhu Liang, Xu Linda, Li Dongxia, Cai Hui and Pao Tod

+ Author Affiliations

DOI: 10.1088/1674-4926/30/3/033005

Abstract: The CF2 density and etch rate of SiO2, Si3N4 and Si are investigated as a function of gas pressure and O2 flow rate in fluorocarbon plasma. As the pressure increases, the self-bias voltage decreases whereas the SiO2 etch rate increases. Previous study has shown that SiO2 etch rate is proportional to the self-bias voltage. This result indicates that other etching parameters contribute to the SiO2 etching. Generally, the CF2radical is considered as a precursor for fluorocarbon layer formation. At a given power, defluorination of fluorocarbon under high-energy ion bombardment is a main source of fluorine for SiO2 etching. When more CF2 radical in plasma, SiO2 etch rate is increased because more fluorine can be provided. In this case, CF2 is considered as a reactant for SiO2 etching. The etch rate of Si3N4 and Si is mainly determined by the polymer thickness formed on its surface which is dominated by the CF2 density in plasma. Etching results obtained by varying O2 flow rate also support the proposition.

Key words: CF2

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Chen Lele, Zhu Liang, Xu Linda, Li Dongxia, Cai Hui, Pao Tod. Role of CF2 in the etching of SiO2, Si3N4 and Si in fluorocarbon plasma[J]. Journal of Semiconductors, 2009, 30(3): 033005. doi: 10.1088/1674-4926/30/3/033005

Chen L L, Zhu L, Xu L D, Li D X, Cai H, Pao T. Role of CF2 in the etching of SiO2, Si3N4 and Si in fluorocarbon plasma[J]. J. Semicond., 2009, 30(3): 033005. doi: 10.1088/1674-4926/30/3/033005.

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Received: 18 August 2015 Revised: 10 October 2008 Online: Published: 01 March 2009

The CF2 density and etch rate of SiO2, Si3N4 and Si are investigated as a function of gas pressure and O2 flow rate in fluorocarbon plasma. As the pressure increases, the self-bias voltage decreases whereas the SiO2 etch rate increases. Previous study has shown that SiO2 etch rate is proportional to the self-bias voltage. This result indicates that other etching parameters contribute to the SiO2 etching. Generally, the CF2radical is considered as a precursor for fluorocarbon layer formation. At a given power, defluorination of fluorocarbon under high-energy ion bombardment is a main source of fluorine for SiO2 etching. When more CF2 radical in plasma, SiO2 etch rate is increased because more fluorine can be provided. In this case, CF2 is considered as a reactant for SiO2 etching. The etch rate of Si3N4 and Si is mainly determined by the polymer thickness formed on its surface which is dominated by the CF2 density in plasma. Etching results obtained by varying O2 flow rate also support the proposition.

Role of CF2 in the etching of SiO2, Si3N4 and Si in fluorocarbon plasma

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