J. Semicond. > 2009, Volume 30 > Issue 3 > 035001
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SEMICONDUCTOR INTEGRATED CIRCUITS

A voltage-controlled ring oscillator using InP full enhancement-mode HEMT logic

Du Rui, Dai Yang, Chen Yanling and Yang Fuhua

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DOI: 10.1088/1674-4926/30/3/035001

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Abstract: A voltage-controlled ring oscillator (VCO) based on a full enhancement-mode InAlAs/InGaAs/InP high electron mobility transistor (HEMT) logic is proposed. An enhancement-mode HEMT (E-HEMT) is fabricated, whose threshold is demonstrated to be 10 mV. The model of the E-HEMT is established and used in the SPICE simulation of the VCO. The result proves that the full E-HEMT logic technology can be applied to the VCO. And compared with the HEMT DCFL technology, the complexity of our fabrication process is reduced and the reliability is improved.

Keywords: VCO

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    Received: 18 August 2015 Revised: 23 October 2008 Online: Published: 01 March 2009

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      Article Navigation >  Journal of Semiconductors  > 2009  >  30(3): 035001
      Du Rui, Dai Yang, Chen Yanling, Yang Fuhua. A voltage-controlled ring oscillator using InP full enhancement-mode HEMT logic[J]. Journal of Semiconductors, 2009, 30(3): 035001. doi: 10.1088/1674-4926/30/3/035001 ****Du R, Dai Y, Chen Y L, Yang F H. A voltage-controlled ring oscillator using InP full enhancement-mode HEMT logic[J]. J. Semicond., 2009, 30(3): 035001. doi: 10.1088/1674-4926/30/3/035001.
      Citation:
      Du Rui, Dai Yang, Chen Yanling, Yang Fuhua. A voltage-controlled ring oscillator using InP full enhancement-mode HEMT logic[J]. Journal of Semiconductors, 2009, 30(3): 035001. doi: 10.1088/1674-4926/30/3/035001 ****
      Du R, Dai Y, Chen Y L, Yang F H. A voltage-controlled ring oscillator using InP full enhancement-mode HEMT logic[J]. J. Semicond., 2009, 30(3): 035001. doi: 10.1088/1674-4926/30/3/035001.
      shu

      A voltage-controlled ring oscillator using InP full enhancement-mode HEMT logic

      DOI: 10.1088/1674-4926/30/3/035001

      • Research Center of Semiconductor Integration, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

      • Research Center of Semiconductor Integration, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

      • Research Center of Semiconductor Integration, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

      • Research Center of Semiconductor Integration, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

      • Received Date: 2015-08-18
      • Accepted Date: 2008-09-08
      • Revised Date: 2008-10-23
      • Published Date: 2009-03-12

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