SEMICONDUCTOR INTEGRATED CIRCUITS
Wang Hui, Wang Songlin, Lai Xinquan, Ye Qiang, Mou Zaixin, Li Xianrui and Guo Baolong
Abstract: A novel power supply transform technique for high voltage IC based on the TSMC 0.6 μm BCD process is achieved. An adjustable bandgap voltage reference is presented which is different from the traditional power supply transform technique. It can be used as an internal power supply for high voltage IC by using the push-pull output stage to enhance its load capability. High-order temperature compensated circuit is designed to ensure the precision of the reference. Only 0.01 mm2 area is occupied using this novel power supply technique. Compared with traditional technique, 50% of the area is saved, 40% quiescent power loss is decreased, and the temperature coefficient of the reference is only 4.48 ppm/℃. Compared with the traditional LDO (low dropout) regulator, this power conversion architecture does not need external output capacitance and decreases the chip-pin and external components, so the PCB area and design cost are also decreased. The testing results show that this circuit works well.
Key words: power management
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Received: 18 August 2015 Revised: 11 October 2008 Online: Published: 01 March 2009
| Citation: |
Wang Hui, Wang Songlin, Lai Xinquan, Ye Qiang, Mou Zaixin, Li Xianrui, Guo Baolong. A novel on-chip high to low voltage power conversion circuit[J]. Journal of Semiconductors, 2009, 30(3): 035008. doi: 10.1088/1674-4926/30/3/035008
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Wang H, Wang S L, Lai X Q, Ye Q, Mou Z X, Li X R, Guo B L. A novel on-chip high to low voltage power conversion circuit[J]. J. Semicond., 2009, 30(3): 035008. doi: 10.1088/1674-4926/30/3/035008.
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