J. Semicond. > 2009, Volume 30 > Issue 4 > 043004

SEMICONDUCTOR MATERIALS

Thickness dependence of the properties of transparent conducting ZnO:Zr films deposited on flexible substrates by RF magnetron sputtering

Zhang Huafu, Lei Chengxin, Liu Hanfa and Yuan Changkun

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DOI: 10.1088/1674-4926/30/4/043004

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Abstract: Transparent conducting zirconium-doped zinc oxide (ZnO:Zr) thin films with high transparency, low resistivity and good adhesion were successfully prepared on water-cooled flexible substrates (polyethylene glycol terephthalate, PET) by RF magnetron sputtering. The structural, electrical and optical properties of the films were studied for different thicknesses in detail. X-ray diffraction (XRD) and scanning electron microscopy (SEM) revealed that all the deposited films are polycrystalline with a hexagonal structure and a preferred orientation perpendicular to the substrate. The lowest resistivity achieved is 1.55E-3 Ω·cm for a thickness of 189 nm with a Hall mobility of 17.6 cm2/(V·s) and a carrier concentration of 2.15E20 cm-3. All the films present a high transmittance of above 90% in the wavelength range of the visible spectrum.

Key words: zirconium-doped zinc oxide thin films flexible substrates magnetron sputtering transparent conduct- ing films

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    Zhang Huafu, Lei Chengxin, Liu Hanfa, Yuan Changkun. Thickness dependence of the properties of transparent conducting ZnO:Zr films deposited on flexible substrates by RF magnetron sputtering[J]. Journal of Semiconductors, 2009, 30(4): 043004. doi: 10.1088/1674-4926/30/4/043004
    Zhang H F, Lei C X, Liu H F, Yuan C K. Thickness dependence of the properties of transparent conducting ZnO:Zr films deposited on flexible substrates by RF magnetron sputtering[J]. J. Semicond., 2009, 30(4): 043004. doi:  10.1088/1674-4926/30/4/043004.
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    Received: 18 August 2015 Revised: 30 October 2008 Online: Published: 01 April 2009

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      Zhang Huafu, Lei Chengxin, Liu Hanfa, Yuan Changkun. Thickness dependence of the properties of transparent conducting ZnO:Zr films deposited on flexible substrates by RF magnetron sputtering[J]. Journal of Semiconductors, 2009, 30(4): 043004. doi: 10.1088/1674-4926/30/4/043004 ****Zhang H F, Lei C X, Liu H F, Yuan C K. Thickness dependence of the properties of transparent conducting ZnO:Zr films deposited on flexible substrates by RF magnetron sputtering[J]. J. Semicond., 2009, 30(4): 043004. doi:  10.1088/1674-4926/30/4/043004.
      Citation:
      Zhang Huafu, Lei Chengxin, Liu Hanfa, Yuan Changkun. Thickness dependence of the properties of transparent conducting ZnO:Zr films deposited on flexible substrates by RF magnetron sputtering[J]. Journal of Semiconductors, 2009, 30(4): 043004. doi: 10.1088/1674-4926/30/4/043004 ****
      Zhang H F, Lei C X, Liu H F, Yuan C K. Thickness dependence of the properties of transparent conducting ZnO:Zr films deposited on flexible substrates by RF magnetron sputtering[J]. J. Semicond., 2009, 30(4): 043004. doi:  10.1088/1674-4926/30/4/043004.

      Thickness dependence of the properties of transparent conducting ZnO:Zr films deposited on flexible substrates by RF magnetron sputtering

      DOI: 10.1088/1674-4926/30/4/043004
      • Received Date: 2015-08-18
      • Accepted Date: 2008-08-23
      • Revised Date: 2008-10-30
      • Published Date: 2009-04-07

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