
SEMICONDUCTOR MATERIALS
Abstract: Transparent conducting zirconium-doped zinc oxide (ZnO:Zr) thin films with high transparency, low resistivity and good adhesion were successfully prepared on water-cooled flexible substrates (polyethylene glycol terephthalate, PET) by RF magnetron sputtering. The structural, electrical and optical properties of the films were studied for different thicknesses in detail. X-ray diffraction (XRD) and scanning electron microscopy (SEM) revealed that all the deposited films are polycrystalline with a hexagonal structure and a preferred orientation perpendicular to the substrate. The lowest resistivity achieved is 1.55E-3 Ω·cm for a thickness of 189 nm with a Hall mobility of 17.6 cm2/(V·s) and a carrier concentration of 2.15E20 cm-3. All the films present a high transmittance of above 90% in the wavelength range of the visible spectrum.
Key words: zirconium-doped zinc oxide thin films, flexible substrates, magnetron sputtering, transparent conduct- ing films
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Received: 18 August 2015 Revised: 30 October 2008 Online: Published: 01 April 2009
Citation: |
Zhang Huafu, Lei Chengxin, Liu Hanfa, Yuan Changkun. Thickness dependence of the properties of transparent conducting ZnO:Zr films deposited on flexible substrates by RF magnetron sputtering[J]. Journal of Semiconductors, 2009, 30(4): 043004. doi: 10.1088/1674-4926/30/4/043004
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Zhang H F, Lei C X, Liu H F, Yuan C K. Thickness dependence of the properties of transparent conducting ZnO:Zr films deposited on flexible substrates by RF magnetron sputtering[J]. J. Semicond., 2009, 30(4): 043004. doi: 10.1088/1674-4926/30/4/043004.
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