InP-base resonant tunneling diodes

Han Chunlin; Chen Chen; Zou Penghui; Zhang Yang; Zeng Yiping; Xue Fangshi; Gao Jianfeng; Zhang Zheng; Geng Tao

doi:10.1088/1674-4926/30/6/064001

Article Navigation > Journal of Semiconductors > 2009 > 30(6): 064001

Han Chunlin, Chen Chen, Zou Penghui, Zhang Yang, Zeng Yiping, Xue Fangshi, Gao Jianfeng, Zhang Zheng, Geng Tao. InP-base resonant tunneling diodes[J]. Journal of Semiconductors, 2009, 30(6): 064001. doi: 10.1088/1674-4926/30/6/064001 ****Han C L, Chen C, Zou P H, Zhang Y, Zeng Y P, Xue F S, Gao J F, Zhang Z, Geng T. InP-base resonant tunneling diodes[J]. J. Semicond., 2009, 30(6): 064001. doi: 10.1088/1674-4926/30/6/064001.

Citation:

Han Chunlin, Chen Chen, Zou Penghui, Zhang Yang, Zeng Yiping, Xue Fangshi, Gao Jianfeng, Zhang Zheng, Geng Tao. InP-base resonant tunneling diodes[J]. Journal of Semiconductors, 2009, 30(6): 064001. doi: 10.1088/1674-4926/30/6/064001 ****

Han C L, Chen C, Zou P H, Zhang Y, Zeng Y P, Xue F S, Gao J F, Zhang Z, Geng T. InP-base resonant tunneling diodes[J]. J. Semicond., 2009, 30(6): 064001. doi: 10.1088/1674-4926/30/6/064001.

Citation:

Han C L, Chen C, Zou P H, Zhang Y, Zeng Y P, Xue F S, Gao J F, Zhang Z, Geng T. InP-base resonant tunneling diodes[J]. J. Semicond., 2009, 30(6): 064001. doi: 10.1088/1674-4926/30/6/064001.

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InP-base resonant tunneling diodes

DOI: 10.1088/1674-4926/30/6/064001

State Key Laboratory of Monolithic Integrated Circuits and Modules, Nanjing Electronic Devices Institute, Nanjing 210016, China
State Key Laboratory of Monolithic Integrated Circuits and Modules, Nanjing Electronic Devices Institute, Nanjing 210016, China
State Key Laboratory of Monolithic Integrated Circuits and Modules, Nanjing Electronic Devices Institute, Nanjing 210016, China
Institute of Semiconductors, Chinese Academy of Sciences, Beijing 10083, China
Institute of Semiconductors, Chinese Academy of Sciences, Beijing 10083, China
State Key Laboratory of Monolithic Integrated Circuits and Modules, Nanjing Electronic Devices Institute, Nanjing 210016, China
State Key Laboratory of Monolithic Integrated Circuits and Modules, Nanjing Electronic Devices Institute, Nanjing 210016, China
State Key Laboratory of Monolithic Integrated Circuits and Modules, Nanjing Electronic Devices Institute, Nanjing 210016, China
State Key Laboratory of Monolithic Integrated Circuits and Modules, Nanjing Electronic Devices Institute, Nanjing 210016, China

Received Date: 2015-08-18
Accepted Date: 2008-06-11
Revised Date: 2009-02-13
Published Date: 2009-07-13

Abstract

Abstract

We have fabricated In0.53Ga0.47As/AlAs/InP resonant tunneling diodes (RTDs) based on the air-bridge technology by using electron beam lithography processing. The epitaxial layers of the RTD were grown on semi-insulating (100) InP substrates by molecular beam epitaxy. RTDs with a peak current density of 24.6 kA/cm2 and a peak-to-valley current ratio of 8.6 at room temperature have been demonstrated.
- RTD

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InP-base resonant tunneling diodes

DOI: 10.1088/1674-4926/30/6/064001

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InP-base resonant tunneling diodes

DOI: 10.1088/1674-4926/30/6/064001

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