| Citation: |
Hu Yuehui, Zhang Xiangwen, Qu Minghao, Wang Lifu, Zeng Tao, Xie Yaojiang. Simulation analysis of the effects of a back surface field on a p-a-Si:H/n-c-Si/n+-a-Si:H heterojunction solar cell[J]. Journal of Semiconductors, 2009, 30(6): 064006. doi: 10.1088/1674-4926/30/6/064006
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Hu Y H, Zhang X W, Qu M H, Wang L F, Zeng T, Xie Y J. Simulation analysis of the effects of a back surface field on a p-a-Si:H/n-c-Si/n+-a-Si:H heterojunction solar cell[J]. J. Semicond., 2009, 30(6): 064006. doi: 10.1088/1674-4926/30/6/064006.
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Simulation analysis of the effects of a back surface field on a p-a-Si:H/n-c-Si/n+-a-Si:H heterojunction solar cell
DOI: 10.1088/1674-4926/30/6/064006
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Abstract
In order to investigate the effects of a back surface field (BSF) on the performance of a p-doped amor-phous silicon (p-a-Si:H)/n-doped crystalline silicon (n-c-Si) solar cell, a heterojunction solar cell with a p-a-Si:H/n-c-Si/n+-a-Si:H structure was designed. An n+-a-Si:H film was deposited on the back of an n-c-Si wafer as the BSF. The photovoltaic performance of p-a-Si:H/n-c-Si/n+-a-Si:H solar cells were simulated. It was shown that the BSF of the p-a-Si:H/n-c-Si/n+-a-Si:H solar cells could effectively inhibit the decrease of the cell performance caused by interface states. -
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