| Citation: |
He Baoping, Yao Zhibin, Guo Hongxia, Luo Yinhong, Zhang Fengqi, Wang Yuanming, Zhang Keying. Method of simulation of low dose rate for total dose effect in 0.18 μm CMOS technology[J]. Journal of Semiconductors, 2009, 30(7): 074009. doi: 10.1088/1674-4926/30/7/074009
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He B P, Yao Z B, Guo H X, Luo Y H, Zhang F Q, Wang Y M, Zhang K Y. Method of simulation of low dose rate for total dose effect in 0.18 μm CMOS technology[J]. J. Semicond., 2009, 30(7): 074009. doi: 10.1088/1674-4926/30/7/074009.
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Method of simulation of low dose rate for total dose effect in 0.18 μm CMOS technology
DOI: 10.1088/1674-4926/30/7/074009
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Abstract
Three methods for simulating low dose rate irradiation are presented and experimentally verified by using 0.18 μm CMOS transistors. The results show that it is the best way to use a series of high dose rate irradiations, with 100 ℃ annealing steps in-between irradiation steps, to simulate a continuous low dose rate irradiation. This approach can reduce the low dose rate testing time by as much as a factor of 45 with respect to the actual 0.5 rad (Si)/s dose rate irradiation. The procedure also provides detailed information on the behavior of the test devices in a low dose rate environment.-
Keywords:
- off-state leakage current
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References
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Proportional views
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