A 3–5 GHz TH-UWB transmitter in 0.18-μm RF CMOS technology

Duan Jihai; Wang Zhigong; Li Zhiqun

doi:10.1088/1674-4926/30/7/075006

J. Semicond. > 2009, Volume 30 > Issue 7 > 075006

SEMICONDUCTOR INTEGRATED CIRCUITS

A 3–5 GHz TH-UWB transmitter in 0.18-μm RF CMOS technology

Duan Jihai, Wang Zhigong and Li Zhiqun

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DOI: 10.1088/1674-4926/30/7/075006

Abstract: An RF transmitter is proposed for 3–5 GHz time-hopping ultra wideband (TH-UWB) wireless applications. The transmitter consists of a 4-GHz oscillator, a switch with a controllable attenuator and an output matching circuit. Through controlling the low frequency signals with time-hopping pulse position modulation (TH-PPM), the circuit supplies TH-UWB signals and can directly drive an antenna by a transmission line. The transmitter was implemented in a 0.18-μm CMOS technology, and the output amplitude is about 65 mV at a 50 Ω load from a 1.8-V supply, the return loss (S11) at the output port is less than -10dB, and the chip size is 0.7 × 0.8 mm2, with a power consumption of 12.3 mW.

Key words: complementary metal oxide semiconductor

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Yan Wei, Zhang Renping, Du Yandong, Han Weihua, Yang Fuhua. Analysis of the ohmic contacts of Ti/Al/Ni/Au to AlGaN/GaN HEMTs by the multi-step annealing process[J]. Journal of Semiconductors, 2012, 33(6): 064005. doi: 10.1088/1674-4926/33/6/064005

Yan W, Zhang R P, Du Y D, Han W H, Yang F H. Analysis of the ohmic contacts of Ti/Al/Ni/Au to AlGaN/GaN HEMTs by the multi-step annealing process[J]. J. Semicond., 2012, 33(6): 064005. doi: 10.1088/1674-4926/33/6/064005.

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Received: 18 August 2015 Revised: 25 March 2009 Online: Published: 01 July 2009

An RF transmitter is proposed for 3–5 GHz time-hopping ultra wideband (TH-UWB) wireless applications. The transmitter consists of a 4-GHz oscillator, a switch with a controllable attenuator and an output matching circuit. Through controlling the low frequency signals with time-hopping pulse position modulation (TH-PPM), the circuit supplies TH-UWB signals and can directly drive an antenna by a transmission line. The transmitter was implemented in a 0.18-μm CMOS technology, and the output amplitude is about 65 mV at a 50 Ω load from a 1.8-V supply, the return loss (S11) at the output port is less than -10dB, and the chip size is 0.7 × 0.8 mm2, with a power consumption of 12.3 mW.

A 3–5 GHz TH-UWB transmitter in 0.18-μm RF CMOS technology

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A 3–5 GHz TH-UWB transmitter in 0.18-μm RF CMOS technology

DOI: 10.1088/1674-4926/30/7/075006

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A 3–5 GHz TH-UWB transmitter in 0.18-μm RF CMOS technology

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