| Citation: |
Zhang Changsha, Zeng Xiangbo, Peng Wenbo, Shi Mingji, Liu Shiyong, Xiao Haibo, Wang Zhanguo, Chen Jun, Wang Shuangqing. Influence of zinc phthalocyanines on photoelectrical properties of hydrogenated amorphous silicon[J]. Journal of Semiconductors, 2009, 30(8): 083004. doi: 10.1088/1674-4926/30/8/083004
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Zhang C S, Zeng X B, Peng W B, Shi M J, Liu S Y, Xiao H B, Wang Z G, Chen J, Wang S Q. Influence of zinc phthalocyanines on photoelectrical properties of hydrogenated amorphous silicon[J]. J. Semicond., 2009, 30(8): 083004. doi: 10.1088/1674-4926/30/8/083004.
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Influence of zinc phthalocyanines on photoelectrical properties of hydrogenated amorphous silicon
DOI: 10.1088/1674-4926/30/8/083004
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Abstract
Composites consisting of hydrogenated amorphous silicon (a-Si: H, inorganic) and zinc phthalocyanine (ZnPc, organic) were prepared by vacuum evaporation of ZnPc and sequential deposition amorphous silicon via plasma enhanced chemical vapor deposition (PECVD). The optical and electrical properties of the composite film have been investigated. The results demonstrate that ZnPc can endure the temperature and bombardment of the PECVD plasma and photoconductivity of the composite film was improved by 89.9% compared to pure a-Si: Hfilm. Electron mobility-lifetime products µT of the composite film were increased by nearly one order of magnitude from 6.96 × 10-7 to 5.08 ×
10-6 cm2/V. Combined with photoconductivity spectra of the composites and pure a-Si:H, we tentatively elucidate the improvement in photoconductivity of the composite film.-
Keywords:
- zinc phthalocyanines
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References
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Proportional views
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