J. Semicond. > 2009, Volume 30 > Issue 8 > 083004

SEMICONDUCTOR MATERIALS

Influence of zinc phthalocyanines on photoelectrical properties of hydrogenated amorphous silicon

Zhang Changsha, Zeng Xiangbo, Peng Wenbo, Shi Mingji, Liu Shiyong, Xiao Haibo, Wang Zhanguo, Chen Jun and Wang Shuangqing

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DOI: 10.1088/1674-4926/30/8/083004

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Abstract: Composites consisting of hydrogenated amorphous silicon (a-Si: H, inorganic) and zinc phthalocyanine (ZnPc, organic) were prepared by vacuum evaporation of ZnPc and sequential deposition amorphous silicon via plasma enhanced chemical vapor deposition (PECVD). The optical and electrical properties of the composite film have been investigated. The results demonstrate that ZnPc can endure the temperature and bombardment of the PECVD plasma and photoconductivity of the composite film was improved by 89.9% compared to pure a-Si: Hfilm. Electron mobility-lifetime products µT of the composite film were increased by nearly one order of magnitude from 6.96 × 10-7 to 5.08 ×
10-6 cm2/V. Combined with photoconductivity spectra of the composites and pure a-Si:H, we tentatively elucidate the improvement in photoconductivity of the composite film.

Key words: zinc phthalocyanines

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    Zhang Changsha, Zeng Xiangbo, Peng Wenbo, Shi Mingji, Liu Shiyong, Xiao Haibo, Wang Zhanguo, Chen Jun, Wang Shuangqing. Influence of zinc phthalocyanines on photoelectrical properties of hydrogenated amorphous silicon[J]. Journal of Semiconductors, 2009, 30(8): 083004. doi: 10.1088/1674-4926/30/8/083004
    Zhang C S, Zeng X B, Peng W B, Shi M J, Liu S Y, Xiao H B, Wang Z G, Chen J, Wang S Q. Influence of zinc phthalocyanines on photoelectrical properties of hydrogenated amorphous silicon[J]. J. Semicond., 2009, 30(8): 083004. doi:  10.1088/1674-4926/30/8/083004.
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    Received: 18 August 2015 Revised: 24 March 2009 Online: Published: 01 August 2009

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      Zhang Changsha, Zeng Xiangbo, Peng Wenbo, Shi Mingji, Liu Shiyong, Xiao Haibo, Wang Zhanguo, Chen Jun, Wang Shuangqing. Influence of zinc phthalocyanines on photoelectrical properties of hydrogenated amorphous silicon[J]. Journal of Semiconductors, 2009, 30(8): 083004. doi: 10.1088/1674-4926/30/8/083004 ****Zhang C S, Zeng X B, Peng W B, Shi M J, Liu S Y, Xiao H B, Wang Z G, Chen J, Wang S Q. Influence of zinc phthalocyanines on photoelectrical properties of hydrogenated amorphous silicon[J]. J. Semicond., 2009, 30(8): 083004. doi:  10.1088/1674-4926/30/8/083004.
      Citation:
      Zhang Changsha, Zeng Xiangbo, Peng Wenbo, Shi Mingji, Liu Shiyong, Xiao Haibo, Wang Zhanguo, Chen Jun, Wang Shuangqing. Influence of zinc phthalocyanines on photoelectrical properties of hydrogenated amorphous silicon[J]. Journal of Semiconductors, 2009, 30(8): 083004. doi: 10.1088/1674-4926/30/8/083004 ****
      Zhang C S, Zeng X B, Peng W B, Shi M J, Liu S Y, Xiao H B, Wang Z G, Chen J, Wang S Q. Influence of zinc phthalocyanines on photoelectrical properties of hydrogenated amorphous silicon[J]. J. Semicond., 2009, 30(8): 083004. doi:  10.1088/1674-4926/30/8/083004.

      Influence of zinc phthalocyanines on photoelectrical properties of hydrogenated amorphous silicon

      DOI: 10.1088/1674-4926/30/8/083004
      • Received Date: 2015-08-18
      • Accepted Date: 2009-03-12
      • Revised Date: 2009-03-24
      • Published Date: 2009-07-31

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