Chemical etching of a GaSb crystal incorporated with Mn grown by the Bridgman method under microgravity conditions

Chen Xiaofeng; Chen Nuofu; Wu Jinliang; Zhang Xiulan; Chai Chunlin; Yu Yude

doi:10.1088/1674-4926/30/8/083006

Article Navigation > Journal of Semiconductors > 2009 > 30(8): 083006

Chen Xiaofeng, Chen Nuofu, Wu Jinliang, Zhang Xiulan, Chai Chunlin, Yu Yude. Chemical etching of a GaSb crystal incorporated with Mn grown by the Bridgman method under microgravity conditions[J]. Journal of Semiconductors, 2009, 30(8): 083006. doi: 10.1088/1674-4926/30/8/083006 ****Chen X F, Chen N F, Wu J L, Zhang X L, Chai C L, Yu Y D. Chemical etching of a GaSb crystal incorporated with Mn grown by the Bridgman method under microgravity conditions[J]. J. Semicond., 2009, 30(8): 083006. doi: 10.1088/1674-4926/30/8/083006.

Citation:

Chen X F, Chen N F, Wu J L, Zhang X L, Chai C L, Yu Y D. Chemical etching of a GaSb crystal incorporated with Mn grown by the Bridgman method under microgravity conditions[J]. J. Semicond., 2009, 30(8): 083006. doi: 10.1088/1674-4926/30/8/083006.

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Chemical etching of a GaSb crystal incorporated with Mn grown by the Bridgman method under microgravity conditions

DOI: 10.1088/1674-4926/30/8/083006

Key Laboratory of Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Key Laboratory of Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
National Laboratory of Microgravity, Institute of Mechanics, Chinese Academy of Sciences, Beijing 100080, China
Key Laboratory of Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
National Laboratory of Microgravity, Institute of Mechanics, Chinese Academy of Sciences, Beijing 100080, China
Key Laboratory of Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Key Laboratory of Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Key Laboratory of Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

Received Date: 2015-08-18
Accepted Date: 2009-03-02
Revised Date: 2009-03-02
Published Date: 2009-07-31

Abstract

Abstract

A GaSb crystal incorporated with Mn has been grown by the Bridgman method on the Polizon facility onboard the FOTON-M3 spacecraft. Structural defects and growth striations have been successfully revealed by the chemical etching method. By calculating various parameters of the convection, the striation patterns can be explained, and the critical value of the Taylor number, which characterizes the convective condition of the rotating magnetic field induced azimuthal flow, was shown. The stresses generated during crystal growth can be reflected by the observations of etch pit distribution and other structural defects. Suggestions for improving the space experiment to improve the quality of the crystal are given.
- chemical etching

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Chemical etching of a GaSb crystal incorporated with Mn grown by the Bridgman method under microgravity conditions

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Chemical etching of a GaSb crystal incorporated with Mn grown by the Bridgman method under microgravity conditions

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